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Method for preparing aluminum nitride single crystal whiskers

A technology of aluminum nitride and single crystal, applied in chemical instruments and methods, single crystal growth, single crystal growth, etc., to reduce the use of raw materials, improve safety and reliability, and save energy

Inactive Publication Date: 2019-03-22
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the research on obtaining single crystal aluminum nitride whiskers directly by HVPE method has not been reported yet.

Method used

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  • Method for preparing aluminum nitride single crystal whiskers
  • Method for preparing aluminum nitride single crystal whiskers
  • Method for preparing aluminum nitride single crystal whiskers

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] 1) Weigh 1g of aluminum particles with a purity of 99.999% and put them into a corundum boat for later use; use acetone and isopropanol to ultrasonically clean the surface of the sapphire for 10 minutes, and dry it for later use;

[0017] 2) One end of the corundum tube in the reaction chamber of the hydride vapor phase epitaxy equipment is connected to the air inlet, and the corundum boat filled with aluminum particles in step 1) is pushed into the corundum tube from the other end until it reaches the source area, and the substrate is placed at a distance from the corundum tube. Port 5 ~ 10cm;

[0018] 3) During the aluminum nitride growth process, the reaction chamber was first evacuated to 8Pa, and then 0.1L / min nitrogen gas was introduced, the temperature of the source area was raised to 1400°C, and the temperature of the growth area was raised to 1550°C. After the temperature reaches the set value, adjust the flow rate of the nitrogen gas path to 1.1L / min, the flow...

Embodiment 2

[0021] 1) Weigh 1g of aluminum particles with a purity of 99.999% and put them into a corundum boat for later use; use acetone and isopropanol to ultrasonically clean the surface of the sapphire for 10 minutes, and dry it for later use;

[0022] 2) One end of the corundum tube in the reaction chamber of the hydride vapor phase epitaxy equipment is connected to the air inlet, and the corundum boat filled with aluminum particles in step 1) is pushed into the corundum tube from the other end until it reaches the source area, and the substrate is placed at a distance from the corundum tube. Port 5 ~ 10cm;

[0023] 3) During the growth process of aluminum nitride nanowires, the reaction chamber was first evacuated to 29Pa, and then 0.1L / min nitrogen gas was introduced, the temperature of the source area was raised to 1400°C, and the temperature of the growth area was raised to 1550°C. After the temperature reaches the set value, adjust the flow rate of the nitrogen gas path to 1.1L...

Embodiment 3

[0027] 1) Weigh 1g of aluminum particles with a purity of 99.999% and put them into a corundum boat for later use; use acetone and isopropanol to ultrasonically clean the surface of the sapphire for 10 minutes, and dry them for later use;

[0028] 2) One end of the corundum tube in the reaction chamber of the hydride vapor phase epitaxy equipment is connected to the argon gas inlet, and the corundum boat filled with aluminum particles in step 1) is pushed into the corundum tube from the other end to the position of the source area, and the substrate is placed at a distance from Corundum tube port 5 ~ 10cm;

[0029] 3) During the growth process of aluminum nitride nanowires, the reaction chamber was first evacuated to 23Pa, and then 0.1L / min nitrogen gas was introduced, the temperature of the source area was raised to 1400°C, and the temperature of the growth area was raised to 1550°C. After the temperature reaches the set value, adjust the flow rate of nitrogen gas path to 4L / ...

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Abstract

The invention discloses a method for preparing aluminum nitride single crystal whiskers. The method comprises the following steps: adding high-purity aluminum particles into a corundum boat, putting the corundum boat and a substrate into a reaction chamber of hydride gas phase epitaxial equipment, and respectively placing in a source region and a growth region; vacuumizing, controlling the temperature of the source region to be 1400 DEG C, controlling the temperature of the growth region to be 1550 DEG C, wherein argon serves as carrier gas, and nitrogen serves as a nitrogen source; preparingaluminum nitride whiskers on the substrate, wherein the growth time is 40-90 minutes; cooling to a room temperature after growth ends; taking out the sample, and forming a white sediment layer on thesurface of the substrate, thereby obtaining the aluminum nitride single crystal whiskers. The aluminum nitride single crystal whisker grown by the method has high crystallization quality, and the method has the advantages of being simple to operate, low in cost, high in efficiency, free of hazardous gas and the like.

Description

technical field [0001] The invention relates to the technical field of preparing aluminum nitride, in particular to a method for preparing aluminum nitride single crystal whiskers. Background technique [0002] Aluminum nitride has high thermal conductivity, excellent dielectric properties, acoustic wave transmission properties, excellent piezoelectric properties and a large band gap, and can be used as a new high-density packaging substrate material and a substrate material for high-power circuit modules . In the process of research on aluminum nitride, people have discovered many excellent properties of aluminum nitride whiskers. The crystal structure of aluminum nitride whiskers is complete, with fewer internal defects, and its strength and modulus can be close to the theory of complete crystal materials. It can be used as a toughening and reinforcing agent to prepare new composite structural materials, and it can also be used to make functional composite materials with ...

Claims

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Application Information

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IPC IPC(8): C30B25/02C30B29/38C30B29/62
CPCC30B25/005C30B25/02C30B29/38C30B29/62
Inventor 陈贵锋崔起源张辉解新建谢路肖
Owner HEBEI UNIV OF TECH
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