Method for preparing non-masked P-type full back electrode contact crystalline silicon solar cell

Abstract

The invention relates to the technical field of solar cells, in particular to a method for preparing a non-masked P-type full back electrode contact crystalline silicon solar cell. The method comprises the steps of: carrying out texturing; depositing tunneling silicon oxide and an intrinsic polycrystalline silicon film, and performing patterned implantation of phosphorus ions; then carrying out etching by using a TMAH solution at a concentration of 1-2% and a solution temperature of 25-80 DEG C, and etching away an intrinsic polycrystalline silicon layer in a non-n+ region and an intrinsic polycrystalline silicon layer on the front surface; then immersing the substrate in a 1-5% HF solution for 1 to 2 minutes to remove the tunneling oxide layer SiO2 in the region; then performing annealing; activating the phosphorus atoms in ion implantation to form even doping in the silicon, so as to form a pn junction region; and finally removing the phosphorosilicate glass on the surface of the pnjunction region, depositing a passivation layer, performing laser film opening, and carrying out screen printing. The method provided by the invention has the advantages of simple production process and high battery efficiency, does not have expensive processes such as boron diffusion, can greatly reduce the cost of the full back electrode contact solar cell, and is suitable for large-scale industrial application.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for preparing a P-type full-back electrode-contact crystalline silicon solar cell without a mask. Background technique [0002] IBC (Inter digitated back contact refers to interdigitated back contact) battery means that there is no electrode on the front of the battery, and the metal grid lines of the positive and negative poles are interdigitated and arranged on the back of the battery. The biggest feature of the IBC battery is that the PN junction and the metal contact are on the back of the battery, and the front is not affected by the metal electrode shielding, so it has a higher short-circuit current Jsc. At the same time, the back can allow wider metal grid lines to reduce the series resistance Rs and improve The fill factor FF; together with the front surface field (FrontSurface Field, FSF) of the battery and the open circuit voltage gain brought about by good...

AI Technical Summary

Problems solved by technology

Therefore, multiple masking processes are required in the preparation process, making the process cumbersome and complicated, and the cost remains high

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