Foam nickel supported single crystal trinickel diselenide nanowire array and preparation method thereof

A technology of nickel nanowire and nickel foam is applied in the field of single crystal nickel diselenide nanowire array and preparation thereof, and achieves the effects of high efficiency, simple operation and low cost

Inactive Publication Date: 2019-04-02
ANYANG NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, how to synthesize nickel diselenide nanowires through a simple, cheap and convenient method is still a great challenge.

Method used

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  • Foam nickel supported single crystal trinickel diselenide nanowire array and preparation method thereof
  • Foam nickel supported single crystal trinickel diselenide nanowire array and preparation method thereof
  • Foam nickel supported single crystal trinickel diselenide nanowire array and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] ①Cut commercially available nickel foam into a size of 1×4cm, and ultrasonically treat it with 3mol / L hydrochloric acid for 30 minutes to remove surface oxides. Wash with absolute ethanol and deionized water alternately, and dry in vacuum for later use.

[0024] ② Add 0.02g of Se powder to 20mL of ethylenediamine solvent to make a reaction solution.

[0025] ③Add the reaction solution prepared in step ② into the 25mL reaction kettle with a polytetrafluoroethylene liner, and then put the nickel foam treated in step ① into it, and heat it at 180°C for 8 hours, then cool the reaction kettle naturally After reaching room temperature, wash several times with absolute ethanol and deionized water, and vacuum-dry the sample to obtain a single crystal nickel diselenide nanowire array.

[0026] The X-ray diffraction pattern of the obtained single crystal nickel diselenide nanowire array is as attached figure 1 shown. It can be seen from the figure that all the diffraction peak...

Embodiment 2

[0028] ①Cut commercially available nickel foam into a size of 1×4cm, and ultrasonically treat it with 3mol / L hydrochloric acid for 30 minutes to remove surface oxides. Wash with absolute ethanol and deionized water alternately, and dry in vacuum for later use.

[0029] ②Add 0.01g of Se powder to 20mL of ethylenediamine solvent to make a reaction solution.

[0030] ③Add the reaction solution prepared in step ② into a 25mL reactor with a polytetrafluoroethylene liner, and then put the nickel foam treated in step ① into it. After 24 hours of water heating at 160°C, the reactor is naturally cooled After reaching room temperature, wash several times with absolute ethanol and deionized water, and vacuum-dry the sample to obtain a single crystal nickel diselenide nanowire array.

[0031] attached image 3 is the X-ray diffraction pattern of single crystal nickel diselenide nanowire array supported by foamed nickel. It can be seen from the figure that its phase is a mixture phase o...

Embodiment 3

[0033] ①Cut commercially available nickel foam into a size of 1×4cm, and ultrasonically treat it with 3mol / L hydrochloric acid for 30 minutes to remove surface oxides. Wash with absolute ethanol and deionized water alternately, and dry in vacuum for later use.

[0034] ② Add 0.02g of Se powder to 20mL of ethylenediamine solvent to make a reaction solution.

[0035]③Add the reaction solution prepared in step ② into the 25mL reaction kettle with a polytetrafluoroethylene liner, and then put the nickel foam treated in step ① into it. After 24 hours of water heating at 180°C, the reaction kettle is naturally cooled After reaching room temperature, wash several times with absolute ethanol and deionized water, and vacuum-dry the sample to obtain a single crystal nickel diselenide nanowire array.

[0036] attached Figure 5 It is a high-resolution transmission electron microscope photograph of the obtained nickel diselenide nanowire array, and clear lattice fringes indicate that th...

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Abstract

The invention relates to a foam nickel supported single crystal trinickel diselenide nanowire array and a preparation method thereof, and belongs to the technical field of nano material preparation. Foam nickel is used as a nickel source, selenium powder is used as a selenium source, and an ethylene diamine solvothermal method is adopted for preparing the foam nickel supported single crystal trinickel diselenide nanowire array. The method is simple and low in cost, can well control crystal growth, the prepared trinickel diselenide is of a one-dimensional single crystal linear structure, the nanowire has a diameter of 30-50 nm and a length of up to 4-6 microns. The foam nickel supported single crystal trinickel diselenide nanowire array structure has obvious application advantages in electrochemical fields such as lithium ion batteries, supercapacitors, and electrolyzed water hydrogen production.

Description

technical field [0001] The invention belongs to the technical field of nanomaterial preparation, and in particular relates to a single-crystal nickel diselenide nanowire array supported by foamed nickel and a preparation method thereof. Background technique [0002] In the past few decades, various one-dimensional to three-dimensional anisotropic nanomaterials have attracted special attention due to their special chemical and physical properties. Moreover, due to their applications in magnetism, optoelectronics, heterogeneous catalysis, and nanoelectronics, the self-assembly of uniform nanomaterials into one-dimensional to three-dimensional superstructures has also rapidly attracted the interest of researchers. Therefore, the control of nanomaterials Synthesis is getting more and more attention. Among them, one-dimensional nanostructures (such as nanowires, nanorods, nanotubes, and nanobelts) have potential applications in the fields of optics, electricity, catalysis, and p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/00B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00C01B19/007C01P2002/72C01P2004/03C01P2004/04C01P2004/16C01P2006/40
Inventor 杜卫民顾永攀魏少红张道军曹智
Owner ANYANG NORMAL UNIV
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