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Strontium ruthenate/lanthanum strontium manganese oxygen transition metal oxide heterojunction and preparation method thereof

A lanthanum strontium manganese oxide and transition metal technology, which is applied in the data storage field of functional oxide thin film materials, can solve the problems of uncontrollable size and direction of exchange bias, and achieve precise controllable size and direction of exchange bias, and a preparation process. Simple, low production cost effect

Active Publication Date: 2019-04-16
HEBEI UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] One of the purposes of the present invention is to provide a strontium ruthenate / lanthanum strontium manganese oxygen transition metal oxide heterojunction to solve the uncontrollable problems of the size and direction of the exchange bias in existing materials

Method used

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  • Strontium ruthenate/lanthanum strontium manganese oxygen transition metal oxide heterojunction and preparation method thereof
  • Strontium ruthenate/lanthanum strontium manganese oxygen transition metal oxide heterojunction and preparation method thereof
  • Strontium ruthenate/lanthanum strontium manganese oxygen transition metal oxide heterojunction and preparation method thereof

Examples

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Embodiment 1

[0046] The preparation steps of any SRO / LSMO-0 (SRO / LMO) transition metal oxide heterojunction thin film material are as follows:

[0047] (1) Use the aforementioned solid-state sintering method to prepare pure-phase SRO and LSMO-0 targets (that is, LMO targets), and place each target in the deposition chamber of the pulsed laser deposition equipment for standby;

[0048] (2) SrTiO 3 (001) The single crystal substrate was ultrasonically cleaned in acetone and alcohol solutions for 20 min each, and the SrTiO 3 (001) The temperature of the single crystal substrate is raised to 750°C under vacuum, and the temperature is kept for 30 minutes;

[0049] (3) Using the pulsed laser deposition method, under the conditions of substrate temperature and oxygen pressure of 750°C and 40 Pa, respectively, the distance between the target and the substrate was adjusted to 4.5 cm, and the energy density was 1.5J / cm 2 The pulsed laser bombards the SRO target first, and the SrTiO 3 (001) A mono...

Embodiment 2

[0053] According to the operation method of Example 1, the preparation steps of any SRO / LSMO-0.1 transition metal oxide heterojunction thin film material are as follows:

[0054] (1) The SRO and LSMO-0.1 targets were prepared by the aforementioned solid-state sintering method, and each target was placed in the deposition chamber of the pulsed laser deposition equipment for standby;

[0055] (2) SrTiO 3 (001) The single crystal substrate was ultrasonically cleaned in acetone and alcohol solutions for 20 min each, and the SrTiO 3 (001) The temperature of the single crystal substrate is raised to 750°C under vacuum, and the temperature is kept for 30 minutes;

[0056] (3) Using the pulsed laser deposition method, under the conditions of substrate temperature and oxygen pressure of 750°C and 40 Pa, respectively, the distance between the target and the substrate was adjusted to 4.5 cm, and the energy density was 1.5J / cm 2 The pulsed laser bombards the SRO target first, and the Sr...

Embodiment 3

[0060] According to the operation method of Example 1, the preparation steps of any SRO / LSMO-0.2 transition metal oxide heterojunction thin film material are as follows:

[0061] (1) The SRO and LSMO-0.2 targets were prepared by the aforementioned solid-state sintering method, and each target was placed in the deposition chamber of the pulsed laser deposition equipment for standby;

[0062] (2) SrTiO 3 (001) The single crystal substrate was ultrasonically cleaned in acetone and alcohol solutions for 20 min each, and the SrTiO 3 (001) The temperature of the single crystal substrate is raised to 750°C under vacuum, and the temperature is kept for 30 minutes;

[0063] (3) Using the pulsed laser deposition method, under the conditions of substrate temperature and oxygen pressure of 750°C and 40 Pa, respectively, the distance between the target and the substrate was adjusted to 4.5 cm, and the energy density was 1.5J / cm 2 The pulsed laser bombards the SRO target first, and the Sr...

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Abstract

The invention provides a strontium ruthenate / lanthanum strontium manganese oxygen transition metal oxide heterojunction and a preparation method of the strontium ruthenate / lanthanum strontium manganese oxygen transition metal oxide heterojunction. The thickness ratio of the strontium ruthenate / lanthanum strontium manganese oxygen transition metal oxide heterojunction is 30-60mn, the strontium ruthenate / lanthanum strontium manganese oxygen transition metal oxide heterojunction comprises a strontium ruthenate film and a lanthanum strontium manganese oxygen film, and in the lanthanum strontium manganese oxygen film, the molar ratio of La to Sr to Mn to O is 1-x:x:1:3, wherein x is larger than or equal to 0 and is smaller than or equal to 1. The strontium ruthenate / lanthanum strontium manganese oxygen transition metal oxide heterojunction is prepared through a pulsed laser deposition method. The strontium ruthenate / lanthanum strontium manganese oxygen transition metal oxide heterojunctionis simple in preparation process and low in production cost, the transverse and longitudinal exchange offset direction and value of the strontium ruthenate / lanthanum strontium manganese oxygen transition metal oxide heterojunction can be accurately and effectively adjusted and controlled by changing the doping content of the Sr element in the lanthanum strontium manganese oxygen film, and the application prospect is wide.

Description

technical field [0001] The invention relates to the technical field of data storage of functional oxide thin film materials, in particular to a strontium ruthenate / lanthanum strontium manganese oxide transition metal oxide heterojunction and a preparation method thereof. Background technique [0002] The exchange bias effect is a common phenomenon in ferromagnetic / antiferromagnetic heterojunctions with a ferromagnetic Curie temperature greater than the antiferromagnetic Neel temperature first discovered by Meiklefohn and Bean in 1956, due to the interfacial iron Magnetic or antiferromagnetic pinning causes the asymmetric shift of the hysteresis loop along the field cooling direction (or in the opposite direction). Spintronics devices mainly rely on the exchange bias effect of ferromagnetic / antiferromagnetic layers in heterojunction systems. The exchange bias effect of transition metal oxides has broad application prospects in the fields of spin valve read heads, tunnel junc...

Claims

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Application Information

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IPC IPC(8): C23C14/28C23C14/08C23C14/58H01L43/08
CPCC23C14/08C23C14/28C23C14/5806H10N50/10
Inventor 陈明敬宁兴坤方立德孟庆刚王江龙王淑芳李小亭
Owner HEBEI UNIVERSITY
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