Strontium ruthenate/lanthanum strontium manganese oxygen transition metal oxide heterojunction and preparation method thereof

A lanthanum strontium manganese oxide and transition metal technology, which is applied in the data storage field of functional oxide thin film materials, can solve the problems of uncontrollable size and direction of exchange bias, and achieve precise controllable size and direction of exchange bias, and a preparation process. Simple, low production cost effect

Active Publication Date: 2019-04-16
HEBEI UNIVERSITY
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  • Description
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Problems solved by technology

[0004] One of the purposes of the present invention is to provide a strontium ruthenate/lanthanum strontium manganese oxygen transitio

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  • Strontium ruthenate/lanthanum strontium manganese oxygen transition metal oxide heterojunction and preparation method thereof
  • Strontium ruthenate/lanthanum strontium manganese oxygen transition metal oxide heterojunction and preparation method thereof
  • Strontium ruthenate/lanthanum strontium manganese oxygen transition metal oxide heterojunction and preparation method thereof

Examples

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Example Embodiment

[0045] Example 1

[0046] The preparation steps of any SRO / LSMO-0 (SRO / LMO) transition metal oxide heterojunction thin film material are:

[0047] (1) Prepare pure phase SRO and LSMO-0 targets (that is, LMO targets) by the aforementioned solid-state sintering method, and place each target in the deposition chamber of the pulsed laser deposition equipment for use;

[0048] (2) SrTiO 3 (001) The single crystal substrate was ultrasonically cleaned in acetone and alcohol solution for 20 min each, and the SrTiO 3 (001) The single crystal substrate is heated to 750°C under vacuum and kept for 30 min;

[0049] (3) Using pulsed laser deposition method under the conditions of substrate temperature and oxygen pressure of 750℃ and 40 Pa, respectively, adjust the distance between target and substrate to 4.5 cm, and use energy density to 1.5J / cm 2 The pulsed laser first bombards the SRO target, and the SrTiO 3 (001) A single-layer SRO film with a thickness of 15 nm is prepared on a single crystal s...

Example Embodiment

[0052] Example 2

[0053] The preparation steps of any SRO / LSMO-0.1 transition metal oxide heterojunction thin film material according to the operating method of Example 1 are:

[0054] (1) Prepare SRO and LSMO-0.1 targets by the aforementioned solid-state sintering method, and place each target in the deposition chamber of the pulsed laser deposition equipment for use;

[0055] (2) SrTiO 3 (001) Single crystal substrates were ultrasonically cleaned in acetone and alcohol solution for 20 min each, SrTiO before deposition 3 (001) The single crystal substrate is heated to 750°C under vacuum and kept for 30 min;

[0056] (3) Using pulsed laser deposition method under the conditions of substrate temperature and oxygen pressure of 750℃ and 40 Pa, respectively, adjust the distance between target and substrate to 4.5 cm, and use energy density to 1.5J / cm 2 The pulsed laser first bombards the SRO target, and the SrTiO 3 (001) A single-layer SRO film with a thickness of 15 nm is prepared on a s...

Example Embodiment

[0059] Example 3

[0060] The preparation steps of any SRO / LSMO-0.2 transition metal oxide heterojunction thin film material according to the operating method of Example 1 are:

[0061] (1) Prepare SRO and LSMO-0.2 targets using the aforementioned solid-state sintering method, and place each target in the deposition chamber of the pulsed laser deposition equipment for use;

[0062] (2) SrTiO 3 (001) Single crystal substrates were ultrasonically cleaned in acetone and alcohol solution for 20 min each, SrTiO before deposition 3 (001) The single crystal substrate is heated to 750°C under vacuum and kept for 30 min;

[0063] (3) Using pulsed laser deposition method under the conditions of substrate temperature and oxygen pressure of 750℃ and 40 Pa, respectively, adjust the distance between target and substrate to 4.5 cm, and use energy density to 1.5J / cm 2 The pulsed laser first bombards the SRO target, and the SrTiO 3 (001) A single-layer SRO film with a thickness of 15 nm is prepared on ...

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Abstract

The invention provides a strontium ruthenate/lanthanum strontium manganese oxygen transition metal oxide heterojunction and a preparation method of the strontium ruthenate/lanthanum strontium manganese oxygen transition metal oxide heterojunction. The thickness ratio of the strontium ruthenate/lanthanum strontium manganese oxygen transition metal oxide heterojunction is 30-60mn, the strontium ruthenate/lanthanum strontium manganese oxygen transition metal oxide heterojunction comprises a strontium ruthenate film and a lanthanum strontium manganese oxygen film, and in the lanthanum strontium manganese oxygen film, the molar ratio of La to Sr to Mn to O is 1-x:x:1:3, wherein x is larger than or equal to 0 and is smaller than or equal to 1. The strontium ruthenate/lanthanum strontium manganese oxygen transition metal oxide heterojunction is prepared through a pulsed laser deposition method. The strontium ruthenate/lanthanum strontium manganese oxygen transition metal oxide heterojunctionis simple in preparation process and low in production cost, the transverse and longitudinal exchange offset direction and value of the strontium ruthenate/lanthanum strontium manganese oxygen transition metal oxide heterojunction can be accurately and effectively adjusted and controlled by changing the doping content of the Sr element in the lanthanum strontium manganese oxygen film, and the application prospect is wide.

Description

technical field [0001] The invention relates to the technical field of data storage of functional oxide thin film materials, in particular to a strontium ruthenate / lanthanum strontium manganese oxide transition metal oxide heterojunction and a preparation method thereof. Background technique [0002] The exchange bias effect is a common phenomenon in ferromagnetic / antiferromagnetic heterojunctions with a ferromagnetic Curie temperature greater than the antiferromagnetic Neel temperature first discovered by Meiklefohn and Bean in 1956, due to the interfacial iron Magnetic or antiferromagnetic pinning causes the asymmetric shift of the hysteresis loop along the field cooling direction (or in the opposite direction). Spintronics devices mainly rely on the exchange bias effect of ferromagnetic / antiferromagnetic layers in heterojunction systems. The exchange bias effect of transition metal oxides has broad application prospects in the fields of spin valve read heads, tunnel junc...

Claims

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Application Information

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IPC IPC(8): C23C14/28C23C14/08C23C14/58H01L43/08
CPCC23C14/08C23C14/28C23C14/5806H10N50/10
Inventor 陈明敬宁兴坤方立德孟庆刚王江龙王淑芳李小亭
Owner HEBEI UNIVERSITY
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