Manufacturing method of light-emitting diode epitaxial wafer

Abstract

The invention discloses a manufacturing method of a light-emitting diode epitaxial wafer, and belongs to the technical field of semiconductors. The manufacturing method comprises the following steps:providing a substrate; putting the substrate into PVD equipment, and depositing an AlN buffer layer on the substrate; putting the substrate deposited with the AlN buffer layer into an alkaline solution, and reacting the alkaline solution with the AlN buffer layer to ensure that the surface of the AlN buffer layer is an Al polar surface; putting the substrate deposited with the AlN buffer layer into MOCVD equipment, and sequentially growing an undoped GaN layer, an N-type layer, a multi-quantum well layer and a P-type layer on the Al polar surface of the AlN buffer layer. When the surface of the AlN buffer layer is an Al polar surface, the lattice matching degree between the AlN buffer layer and the undoped GaN layer is higher. Therefore, the manufacturing method can improve the lattice matching degree between the AlN buffer layer and the GaN layer, thereby improving the crystal quality of the grown light-emitting diode epitaxial wafer and further improving the luminous efficiency of the LED.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a light-emitting diode epitaxial wafer. Background technique [0002] GaN (gallium nitride) has good thermal conductivity, high temperature resistance, acid and alkali resistance, high hardness and other characteristics, and is widely used in light-emitting diodes of various wavelengths. A core component of a GaN-based LED (Light Emitting Diode, light emitting diode) is an LED chip, and the LED chip includes an epitaxial wafer and electrodes disposed on the epitaxial wafer. [0003] The main structure of the GaN-based light-emitting diode epitaxial wafer includes: a substrate, and an AlN buffer layer, an undoped GaN layer, an N-type layer, a multi-quantum well layer and a P-type layer stacked on the substrate. In order to improve the production capacity of light-emitting diodes and the optoelectronic performance of LED chips, when the above-ment...

AI Technical Summary

Problems solved by technology

[0005] The surface of the AlN buffer layer formed by PVD equipment may be an N-polar plane, and the lattice matching between the N-polar plane and the GaN layer is poor, resulting in a gap between the AlN buffer layer and the undoped GaN layer. Large stress causes the undoped GaN layer to warp, which affects the crystal quality of the grown LED epitaxial wafer

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