Halide-coated halogen perovskite quantum dots and preparation method thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- JIANGSU UNIV OF TECH
- Publication Date
- 2021-04-20
Abstract
Description
technical field
[0001] The invention relates to the technical field of optoelectronic materials, in particular to a halide-coated halogen perovskite quantum dot and a preparation method thereof. Background technique
[0002] Due to its excellent optical and optoelectronic properties, broad application prospects and simple preparation process, halogen perovskite ABX 3 (The X position is a single halogen Cl, Br, I, or a mixed halogen) quantum dots have attracted much attention since their first successful synthesis in 2015. Compared with traditional II-VI cadmium-containing semiconductor nanocrystals, halogen perovskite has the advantages of abundant raw materials, simple preparation process, perfect crystal structure, and high carrier mobility, especially its very narrow luminescence half-peak width (11 ~40nm) can show higher color saturation (color purity), wider color gamut (≈150% NTSC) and more realistic display effect. Based on the above advantages, halogen perovskites ...