Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Halide-coated halogen perovskite quantum dots and preparation method thereof

A halide and perovskite technology, which is applied in the field of halide-coated halogen perovskite quantum dots and its preparation, can solve problems such as lack, achieve narrow half-peak width, simple preparation method, and improve the effect of luminous quantum efficiency

Active Publication Date: 2021-04-20
JIANGSU UNIV OF TECH
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, according to the composition characteristics of halogen perovskite quantum dots, there is still a lack of research on coating the surface with halides to improve their stability.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] BiOBr coated CsPbBr 3 The preparation of quantum dots comprises the following steps:

[0025] Press CsPbBr 3 The mass ratio of quantum dots to BiOBr is 1:1, weigh CsPbBr 3 Put quantum dots in an agate mortar, add BiOBr, and grind evenly, the halogen elements in the two are exchanged to a certain extent, and CsPbBr is obtained 3 / BiOBr precursor mixed powder, put the precursor mixed powder into the crucible, and calcined at 600°C for 0.5h in the argon of the tube furnace to obtain BiOBr-coated CsPbBr 3 Perovskite quantum dots.

[0026] Obtain BiOBr coating CsPbBr to present embodiment 3 Perovskite quantum dots were observed by transmission electron microscopy, and the thickness of the BiOBr shell was 1 nm.

[0027] Obtain BiOBr coating CsPbBr to present embodiment 3 The quantum efficiency of perovskite quantum dots detected by the integrating sphere of the fluorometer is 95%; the present embodiment obtains BiOBr coated CsPbBr 3 At 25°C and 40% humidity, the perovs...

Embodiment 2

[0029] BiOCl y Br 1-y Coated CsSnBr x Cl 3-x The preparation of perovskite quantum dots comprises the following steps:

[0030] Press CsSnBr 3 The mass ratio of quantum dots to BiOCl is 1:10, weigh CsSnBr 3 Put the quantum dots in the ball mill, add BiOCl, grind evenly, and the halogen elements in the two are exchanged to a certain extent to obtain CsSnBr x Cl 3-x / BiOCl y Br 1-y Precursor mixed powder, put the precursor mixed powder into a crucible, and calcined at 1000°C for 4h in the argon atmosphere of the tube furnace to obtain BiOCl y Br 1-y Coated CsSnBr x Cl 3-x Perovskite quantum dots.

[0031] Obtain BiOCl to present embodiment y Br 1-y Coated CsSnBr x Cl 3-x Perovskite quantum dots for TEM observation, BiOCl y Br 1-y The thickness of the shell layer is 100 nm.

[0032] Obtain BiOCl to present embodiment y Br 1-y Coated CsSnBr x Cl 3-x The quantum efficiency of perovskite quantum dots is 91% after being detected by the fluorometer integrating s...

Embodiment 3

[0034] ZnBr y Cl 2-y Coating (CH 3 NH 3 ) 0.9 Na 0.1 PbBr x Cl 3-x The preparation of perovskite quantum dots comprises the following steps:

[0035] Press (CH 3 NH 3 ) 0.9 Na 0.1 PbBr x Cl 3-x Quantum dots and ZnBr 2 The mass ratio is 1:5, weigh (CH 3 NH 3 ) 0.9 Na 0.1 PbBr x Cl 3-x Quantum dots in a ball mill, adding ZnBr 2 , mixed evenly, the halogen elements in the two are exchanged to a certain extent, and (CH 3 NH 3 ) 0.9 Na 0.1 PbBr x Cl 3-x / ZnBr y Cl 2-y Precursor mixed powder; put this precursor mixed powder into a crucible, and calcined at 400°C for 100h in the argon atmosphere of the tube furnace to obtain ZnBr y Cl 2-y Coating (CH 3 NH 3 ) 0.9 Na 0.1 PbBr x Cl 3-x Perovskite quantum dots.

[0036] To the ZnBr that present embodiment obtains y Cl 2-y Coating (CH 3 NH 3 ) 0.9 Na 0.1 PbBr x Cl 3-x perovskite quantum dots for transmission electron microscopy, ZnBr y Cl 2-y The thickness of the shell layer is 50 nm.

[0037]...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a halide-coated halogen perovskite quantum dot and a preparation method thereof. The method is characterized in that the preparation method comprises the following steps: mixing a halogen perovskite quantum dot with halide, uniformly grinding, and calcining in a protective atmosphere at 400-1,000 DEG C for 0.5-100 hours to obtain the halide-coated halogen perovskite quantum dot, wherein the halide further comprises metal elements and / or non-metal elements, the non-metal elements are one or more of oxygen elements, sulfur elements and nitrogen elements, and the metal elements comprise one or more of Cu, Fe, Co, Ni, Zn, Hg, Ca, Mg, Sr, Ba, Pb, Sn, Al, Co, Ce, Bi, Sb, Ag, Rh, Zr, Na, K, Cs and Sb. According to the method, the outer surface of the perovskite quantum dot is coated with halide, so that the luminous quantum efficiency of the perovskite quantum dot can be improved, and the light stability of the perovskite quantum dot is improved.

Description

technical field [0001] The invention relates to the technical field of optoelectronic materials, in particular to a halide-coated halogen perovskite quantum dot and a preparation method thereof. Background technique [0002] Due to its excellent optical and optoelectronic properties, broad application prospects and simple preparation process, halogen perovskite ABX 3 (The X position is a single halogen Cl, Br, I, or a mixed halogen) quantum dots have attracted much attention since their first successful synthesis in 2015. Compared with traditional II-VI cadmium-containing semiconductor nanocrystals, halogen perovskite has the advantages of abundant raw materials, simple preparation process, perfect crystal structure, and high carrier mobility, especially its very narrow luminescence half-peak width (11 ~40nm) can show higher color saturation (color purity), wider color gamut (≈150% NTSC) and more realistic display effect. Based on the above advantages, halogen perovskites ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02C09K11/66B82Y20/00B82Y30/00
Inventor 张雅珩黄寿强傅瑜李国标樊超孙道荣关明云
Owner JIANGSU UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com