Thermoelectric element, preparation method of thereof, and thermoelectric device

A thermoelectric element and thermoelectric layer technology, applied in the manufacture/processing of thermoelectric devices, thermoelectric device node lead-out materials, etc., can solve the problems of thermoelectric material matrix and barrier layer diffusion, thermoelectric device performance degradation, and affect the performance of thermoelectric materials , to achieve the effect of maintaining thermoelectric conversion efficiency and stability, high thermal conductivity and electrical conductivity, and improving service life

Pending Publication Date: 2019-05-10
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, many studies use metals such as nickel and titanium as the material of the barrier layer, but there is still a serious diffusion phenomenon between the substrate of the thermoelectric material and the bar

Method used

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  • Thermoelectric element, preparation method of thereof, and thermoelectric device
  • Thermoelectric element, preparation method of thereof, and thermoelectric device
  • Thermoelectric element, preparation method of thereof, and thermoelectric device

Examples

Experimental program
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Example Embodiment

[0047] Example 1

[0048] Step 1: Follow Mg 2 Ge 0.25 Sn 0.73 Bi 0.02 Measure each metal source (accurate to 4 decimal places) according to the stoichiometric ratio, weigh the elemental elements required by the thermoelectric material into a graphite crucible, put the graphite crucible into a quartz tube, and then evacuate to 5×10 -3 Mpa, filled with protective gas argon, and then began to smelt the sample at a current of 220A until each metal source material melted into a liquid state. In order to ensure uniform smelting, after melting into a liquid state, continue to maintain the current at 250A for 1 min until a vortex is formed, then perform water cooling, and then seal the smelted sample. The ingot is placed in a vacuum quartz tube for annealing; the annealing temperature is 550°C and the time is 24h. The sample was then quenched with liquid nitrogen, and the bulk sample was manually ground into powder in a mortar to obtain Mg 2 Ge 0.25 Sn 0.73 Bi 0.02 Thermoelec...

Example Embodiment

[0050] Example 2

[0051] Mg is sequentially charged into the graphite mold 2 Ge 0.25 Sn 0.75 Powder, aluminum alloy bulk (containing 1% nickel), copper-nickel mixed powder, according to Mg 2 Ge 0.25 Sn 0.75 The powder, the aluminum alloy block, and the copper-nickel mixed powder are sequentially loaded into the graphite mold. The vacuum degree is 1.3×10 -3 MPa, the sintering pressure is 27Mpa, and the temperature is raised to 430°C at a rate of 35°C / min for SPS hot pressing sintering for 10min, thereby producing a thermoelectric element. The thermoelectric element has Mg 2 Ge 0.25 Sn 0.75 Thermoelectric layer, aluminum alloy barrier layer and copper-nickel electrode layer. Mg was found after testing 2 Ge 0.25 Sn 0.75 The thickness of the thermoelectric layer is 8 mm, the thickness of the aluminum alloy barrier layer is 0.15 mm, and the thickness of the copper-nickel electrode layer is 1 mm, and there is no crack or obvious diffusion between the interfaces.

Example Embodiment

[0052] Example 3

[0053] The silicon-germanium alloy block, aluminum flakes, and copper powder are sequentially loaded into the graphite mold, and the silicon-germanium alloy block, aluminum flake, and copper powder are sequentially loaded into the graphite mold. The vacuum degree is 1.3×10 -3MPa, the sintering pressure is 29Mpa, and the temperature is raised to 430°C at a rate of 35°C / min for SPS hot pressing sintering for 13min, thereby producing a thermoelectric element. The thermoelectric element has a silicon germanium alloy thermoelectric layer, an aluminum barrier layer and a copper electrode layer. After testing, it was found that there were no cracks and obvious diffusion between the interfaces.

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Abstract

The invention provides a thermoelectric element, which comprises a thermoelectric layer, a barrier layer and an electrode layer. The barrier layer is located between the thermoelectric layer and the electrode layer and is made of elemental aluminum and an aluminum alloy, and the thermal expansion coefficient of the thermoelectric layer and the thermal expansion coefficient of the electrode layer are 15*10<-6>/DEG C-25*10<-6>/DEG C. Through arrangement of the barrier layer, the serious diffusion phenomenon is prevented from being generated between interfaces during direct contact between the thermoelectric layer and the electrode layer; the barrier layer has the high thermal conductivity and electric conductivity and good ductility; and the thermal expansion coefficient of the barrier layerapproximates to the thermal expansion coefficient of the thermoelectric layer and the thermal expansion coefficient of the electrode layer, thus no crack occurs between the interfaces, the bonding strength is high, the interfaces are stable in structure, the thermoelectric efficiency of the thermoelectric layer and the electrical conduction efficiency of the electrode layer are ensured, the thermoelectric conversion efficiency and stability of the thermoelectric element and an thermoelectric device are kept advantageously, and thus the service life of the thermoelectric element and the thermoelectric device is prolonged.

Description

technical field [0001] The invention relates to the technical field of thermoelectric conversion, in particular to a thermoelectric element, a preparation method thereof, and a thermoelectric device. Background technique [0002] Thermoelectric material is a new type of material that can generate electricity with heat energy and convert heat energy with electricity without the help of other external devices based on its special internal structure. Components and devices made of thermoelectric materials have many advantages such as small size, light weight, and simple structure, and have broad application prospects in green energy engineering and refrigeration technology engineering. At present, the development of thermoelectric device technology is still far from perfect, and the selection of thermoelectric materials and electrode materials is the first problem that must be faced. Copper is mostly used as the electrode material for low-temperature thermoelectric materials, ...

Claims

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Application Information

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IPC IPC(8): H01L35/12H01L35/16H01L35/18H01L35/34
Inventor 敖伟琴彭淼余海昭刘福生李均钦张朝华李煜
Owner SHENZHEN UNIV
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