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Sensitive thin film in thin film pressure sensor and manufacturing method and application thereof

A thin-film pressure and sensitive thin-film technology, which is applied in the measurement of the property force of the piezoelectric resistance material, the measurement of the fluid pressure by changing the ohmic resistance, the instrument, etc., can solve the problems of poor corrosion resistance, thin film shedding, large resistance temperature, etc. Coefficient and other issues, to achieve the effect of large strain factor, lower temperature coefficient of resistance, and high sheet resistance

Active Publication Date: 2019-05-17
RES INST OF XIAN JIAOTONG UNIV & SUZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, nickel-chromium alloy and tantalum nitride are used as sensitive thin-film materials for thin-film pressure sensors. Although these two materials have a series of excellent characteristics, there are still many problems in practical applications: (1) The bonding force between the film and the substrate The problem is that when the thickness of the film is large, the film will fall off from the substrate due to excessive internal stress; (2) it has a large temperature coefficient of resistance, and it is not suitable for measurement in an environment with severe temperature changes; (3) widen the film The strain range, so that the relative change of the resistance of the film in the widest possible strain range becomes linear with the strain; (4) The corrosion resistance is not good

Method used

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  • Sensitive thin film in thin film pressure sensor and manufacturing method and application thereof
  • Sensitive thin film in thin film pressure sensor and manufacturing method and application thereof
  • Sensitive thin film in thin film pressure sensor and manufacturing method and application thereof

Examples

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Effect test

Embodiment 1

[0053] The present embodiment provides a kind of sensitive thin film in thin film pressure sensor, and its material is (Ni 0.8 Cr 0.2 ) 0.85 Ta 0.1 N 0.05 .

[0054] The above-mentioned sensitive film in the present embodiment adopts following method to prepare: (1) adopts radio frequency magnetron sputtering method to bombard Ni 0.8 Cr 0.2 target and Ta target, while sputtering, pass Ar gas and N into the reaction chamber 2 The mixed gas, control N 2 The flow rate is 5 sccm, the Ar flow rate is 100 sccm, and the background vacuum is 2×10 -4 , the deposition power is 300W, the deposition time is 2000s, the deposition temperature is 100°C, and the deposition pressure is 0.6Pa. According to the test results of secondary ion mass spectrometry (SIMS), it was confirmed that (Ni 0.8 Cr 0.2 ) 0.85 Ta 0.1 N 0.05 precursor film. (2) will (Ni 0.8 Cr 0.2 ) 0.85 Ta 0.1 N 0.05 Precursor film in N 2 Under the atmosphere, control the heating rate of 10°C / min to raise the ...

Embodiment 2

[0061] The present embodiment provides a kind of sensitive thin film in thin film pressure sensor, and its material is (Ni 0.8 Cr 0.2 ) 0.8 Ta 0.1 N 0.1 .

[0062] The above-mentioned sensitive film in the present embodiment adopts following method to prepare: (1) adopts radio frequency magnetron sputtering method to bombard Ni 0.8 Cr 0.2 target and Ta target, while sputtering, pass Ar gas and N into the reaction chamber 2 The mixed gas, control N 2 The flow rate is 28sccm, the Ar flow rate is 92sccm, and the background vacuum is 2×10 -4 , the deposition power is 100W, the deposition time is 2000s, the deposition temperature is 100°C, and the deposition pressure is 3Pa. According to the test results of secondary ion mass spectrometry (SIMS), it was confirmed that (Ni 0.8 Cr 0.2 ) 0.8 Ta 0.1 N 0.1 precursor film. (2) will (Ni 0.8 Cr 0.2 ) 0.8 Ta 0.1 N 0.1 Precursor film in N 2 Under the atmosphere, the temperature was raised to 900° C. at a controlled rate o...

Embodiment 3

[0068] The present embodiment provides a kind of sensitive thin film in thin film pressure sensor, and its material is (Ni 0.5 Cr 0.5 ) 0.75 Ta 0.12 N 0.13 .

[0069] The above-mentioned sensitive film in the present embodiment adopts following method to prepare: (1) adopts radio frequency magnetron sputtering method to bombard Ni 0.5 Cr 0.5 target and Ta target, while sputtering, pass Ar gas and N into the reaction chamber 2 The mixed gas, control N 2 The flow rate is 10sccm, the Ar flow rate is 70sccm, and the background vacuum is 5×10 -5 , the deposition power is 200W, the deposition time is 1000s, the deposition temperature is 300°C, and the deposition pressure is 3Pa. According to the test results of secondary ion mass spectrometry (SIMS), it was confirmed that (Ni 0.5 Cr 0.5 ) 0.75 Ta 0.12 N 0.13 precursor film. (2) will (Ni 0.5 Cr 0.5 ) 0.75 Ta 0.12 N 0.13 Precursor film in N 2 Under the atmosphere, control the heating rate of 30°C / min to raise the t...

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Abstract

The invention discloses a sensitive thin film in a thin film pressure sensor. The material of the sensitive thin film is (NimCr1-m)1-x-yTaxNy, wherein m is 0.1-0.9, x is 0.05-0.4, and y is 0.05-0.4. The invention further discloses the thin film pressure sensor. The thin film pressure sensor comprises a sensor core body, the sensor core body comprises a substrate, an insulating layer arranged on the substrate, a patterned sensitive film layer arranged on the insulating layer, four electrodes arranged on the patterned sensitive film layer, and a protective layer which covers the part, which is not shielded by the four electrodes, of the patterned sensitive film layer, wherein the patterned sensitive film layer is the sensitive thin film. The invention further discloses a preparation method of the sensitive thin film. Compared with a thin film which is generally used for the thin film pressure sensor in the prior art, the sensitive thin film has a lower resistance temperature coefficient,higher heat stability and higher electrical resistivity and square resistance.

Description

technical field [0001] The invention belongs to the technical field of sensors and their manufacture, and specifically relates to a sensitive thin film in a thin film pressure sensor, a manufacturing method thereof, and an application of the sensitive thin film in a thin film pressure sensor. Background technique [0002] Sensor technology is one of the important technologies of modern measurement and automation systems. From space development to seabed exploration, from production process control to modern civilized life, almost every technology is inseparable from sensors. Development attaches great importance. Among all kinds of sensors, the pressure sensor has the advantages of small size, light weight, high sensitivity, stability and reliability, low cost, and easy integration, and can be widely used in pressure, height, acceleration, liquid flow, flow rate, liquid level, and pressure. Measurement and Control. In addition, it is also widely used in water conservancy, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/35C23C14/58G01L1/18G01L9/06G01L23/10
Inventor 汪国军白煜王敏锐高阳飞张敏
Owner RES INST OF XIAN JIAOTONG UNIV & SUZHOU
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