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Fe doped gamma-Ga2O3 magnetic semiconductor thin film and preparation method and application thereof

A magnetic semiconductor, -ga2o3 technology, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of poor film quality and low lattice mismatch rate, and achieve low production cost and crystallinity Good, even surface effect

Inactive Publication Date: 2019-05-24
北京镓族科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, β-Ga 2 o 3 It is a monoclinic structure, and the lattice mismatch rate of most substrate materials is relatively high, and the quality of the prepared film is poor. Therefore, its monoclinic structure limits its application, while γ-Ga 2 o 3 The cubic phase structure and the lattice mismatch ratio of most substrate materials are relatively low, however, γ-Ga 2 o 3 thermal stability limits its development

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  • Fe doped gamma-Ga2O3 magnetic semiconductor thin film and preparation method and application thereof
  • Fe doped gamma-Ga2O3 magnetic semiconductor thin film and preparation method and application thereof
  • Fe doped gamma-Ga2O3 magnetic semiconductor thin film and preparation method and application thereof

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Embodiment 1

[0045] The embodiment of the present invention provides an Fe-doped γ-Ga 2 o 3 A preparation method for a magnetic semiconductor thin film, the preparation method comprising the steps of:

[0046] (a) Soak the c-plane sapphire substrate in acetone, absolute ethanol and deionized water in sequence, and ultrasonically treat them for 20 min respectively, and then dry them with nitrogen;

[0047] (b) Select the chemical formula as Ga 1.85 Fe 0.15 o 3 Fe-doped Ga 2 o 3 ceramic target;

[0048] (c) The dried c-plane sapphire substrate and Fe-doped Ga 2 o 3 The ceramic target is placed in the deposition chamber, and the c-plane sapphire substrate and Fe-doped Ga 2 o 3 The distance of the ceramic target is 50mm;

[0049] (d) Vacuumize the deposition chamber; the background vacuum degree in the deposition chamber is 1×10 -6 Pa, the c-plane sapphire substrate is heated, and oxygen is introduced at the same time; the substrate is heated to 750°C and the pressure in the deposi...

Embodiment 2

[0052] The embodiment of the present invention provides an Fe-doped γ-Ga 2 o 3 A preparation method for a magnetic semiconductor thin film, the preparation method comprising the steps of:

[0053] (a) MgAl 2 o 4 Substrates were soaked in acetone, absolute ethanol and deionized water in sequence, and ultrasonically treated for 20 minutes, and then dried with nitrogen;

[0054] (b) Select the chemical formula as Ga 1.9 Fe 0.1 o 3 Fe-doped Ga 2 o 3 ceramic target;

[0055] (c) the dried MgAl 2 o 4 substrate and Fe-doped Ga 2 o 3 The ceramic target is placed in the deposition chamber, and the MgAl 2 o 4 substrate with Fe-doped Ga 2 o 3 The distance of the ceramic target is 40mm;

[0056] (d) Vacuumize the deposition chamber; the background vacuum degree in the deposition chamber is 5×10 -6 Pa, for MgAl 2 o 4 The substrate is heated, and oxygen is introduced at the same time; the MgAl 2 o 4 The substrate was heated to 500 °C and the pressure in the deposition ...

Embodiment 3

[0059] The embodiment of the present invention provides an Fe-doped γ-Ga 2 o 3 A preparation method for a magnetic semiconductor thin film, the preparation method comprising the steps of:

[0060] (a) Soak the MgO substrate in acetone, absolute ethanol and deionized water in sequence, and ultrasonically treat them for 20 min, and then dry them with nitrogen;

[0061] (b) Select the chemical formula as Ga 1.8 Fe 0.2 o 3 Fe-doped Ga 2 o 3 ceramic target;

[0062] (c) The dried MgO substrate and Fe-doped Ga 2 o 3 The ceramic target is placed in the deposition chamber, and the MgO substrate and Fe-doped Ga 2 o 3 The distance of the ceramic target is 60mm;

[0063] (d) Vacuumize the deposition chamber; the background vacuum degree in the deposition chamber is 9×10 -6 Pa, the MgO substrate is heated, and oxygen is introduced at the same time; when the MgO substrate is heated to 800 °C and the pressure in the deposition chamber is 1×10 -3 At Pa, turn on the laser for epi...

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Abstract

The embodiments of the invention disclosesan Fe doped gamma-Ga2O3 magnetic semiconductor thin film and a preparation method and application thereof. The preparation method includes the steps that (a)a substrate is cleaned and dried; (b) anFe doped Ga2O3 ceramic target material is selected; (c) the dried substrate and the Fe doped Ga2O3 ceramic target material are placed into a deposition chamber;and (d) a laser molecular beam extrapolation is used for thin film deposition and in-situ annealing, and the Fe doped gamma-Ga2O3 magnetic semiconductor thin film can be obtained. According to the preparation method, the Fe doped Ga2O3 ceramic target material is selected, and the thermally stable Fe doped gamma-Ga2O3 magnetic semiconductor thin film can be obtained under the rowing condition at high temperature; and in addition, operation is easy, implementation is easy, controllability is high, repeatability is good, the reuse rate of the target material is high, and the production cost is low.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of semiconductor materials, in particular to an Fe-doped γ-Ga 2 o 3 Magnetic semiconductor film and its preparation method and application. Background technique [0002] As deep ultraviolet photoelectric devices and high-frequency high-power devices are paid more and more attention, semiconductor materials with wider bandgap (greater than 4eV) have become a research hotspot. Gallium oxide (Ga 2 o 3 ) has a band gap of about 4.9eV. It is a natural deep ultraviolet material. It has great potential in the application of solar blindness, high voltage resistance, high temperature resistance, low loss, high frequency, high power and other devices. It is quite promising in recent years. A new type of semiconductor material. [0003] Currently, Ga 2 o 3 There are 6 confirmed lattice structures, namely α-Ga 2 o 3 , β-Ga 2 o 3 , γ-Ga 2 o 3 , δ-Ga 2 o 3 , ε-Ga 2 o 3 and κ-Ga 2 o ...

Claims

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Application Information

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IPC IPC(8): C23C16/48C23C16/40C23C16/56
Inventor 黄元琪唐为华李培刚
Owner 北京镓族科技有限公司
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