Sintering method of aluminum nitride ceramic substrate

A technology of aluminum nitride ceramics and sintering method, applied in the field of aluminum nitride preparation, can solve the problems of affecting materials, difficult to control the stability of thermal conductivity of substrates, etc.

Active Publication Date: 2022-04-05
银川艾森达新材料发展有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Even if the self-propagating powder used in this method is pretreated in its patent, it is difficult to control the thermal conductivity of the substrate to be stable above 170W / m·K
[0008] In a high thermal conductivity ceramic material and its manufacturing method whose authorization number is CN201510578760, a method of sintering under the protection of a nitrogen atmosphere is disclosed. In this method, the furnace is filled with nitrogen as a protective gas, and there is still a large amount of residual Problems affecting materials due to oxygen impurities

Method used

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  • Sintering method of aluminum nitride ceramic substrate
  • Sintering method of aluminum nitride ceramic substrate
  • Sintering method of aluminum nitride ceramic substrate

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] Sinter the aluminum nitride ceramic substrate according to the following process, backfill high-purity nitrogen after vacuuming to 100Pa, and the backfilling speed is 3m 3 / h, backfilling is completed after 2 hours, the furnace pressure is 0.2MPa, close the backfill valve 30, start heating, increase the temperature to the sintering temperature of 1815°C according to the curve, keep the temperature for 4 hours and then cool down. After starting heating, open the vent valve 20 every 60 minutes during the sintering process, release the pressure to 0.1MPa, close the vent valve 20, open the backfill valve 30, and then 3 Backfill nitrogen to 0.2MPa at a speed of / h, and cycle repeatedly. After the sintering is completed, it is released from the furnace, and after the interlayer powder on the surface of the substrate is removed, the flatness and thermal conductivity of the substrate are measured.

Embodiment 2

[0049] Sinter the aluminum nitride ceramic substrate according to the following process, backfill high-purity nitrogen after vacuuming to 50Pa, and the backfilling speed is 4m 3 / h, backfilling is completed after 1.5 hours, the furnace pressure is 0.2MPa, close the backfill valve 30, start heating, increase the temperature to the sintering temperature of 1810°C according to the curve, keep the temperature for 4 hours and then cool down. After starting to heat, open the vent valve 20 every 30 minutes during the sintering process, release the pressure to 0.1MPa, close the vent valve 20, open the backfill valve 30, and then pressurize at 2m 3 Backfill nitrogen to 0.2MPa at a speed of / h, and cycle repeatedly. After the sintering is completed, it is released from the furnace, and after the interlayer powder on the surface of the substrate is removed, the flatness and thermal conductivity of the substrate are measured.

Embodiment 3

[0051] Sinter the aluminum nitride ceramic substrate according to the following process, backfill high-purity nitrogen after vacuuming to 10Pa, and the backfilling speed is 2m 3 / h, backfilling is completed after 3 hours, the furnace pressure is 0.2MPa, close the backfill valve 30, start heating, heat up to the sintering temperature of 1820°C according to the curve, keep the temperature for 4h and then cool down. After starting heating, open the vent valve 20 every 30 minutes during the sintering process, release the pressure to 0.1MPa, close the vent valve 20, open the backfill valve 30, and then 3 Backfill nitrogen to 0.2MPa at a speed of / h, and cycle repeatedly. After the sintering is completed, it is released from the furnace, and after the interlayer powder on the surface of the substrate is removed, the flatness and thermal conductivity of the substrate are measured.

[0052] The performance parameters of the substrates obtained by sintering in the above three embodime...

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Abstract

A method for sintering an aluminum nitride ceramic substrate. During the sintering process of the substrate, an inert gas is used to replace the atmosphere in the hearth of a graphite sintering furnace. The sintering method of the present invention adopts a controllable nitrogen protection atmosphere and periodically replaces the atmosphere in the furnace , adjust the furnace pressure of the graphite sintering furnace and the atmosphere of chemical substances in the furnace, discharge the impurity atmosphere, control the thermal conductivity of the aluminum nitride ceramic substrate and improve the flatness of the substrate. The thermal conductivity of the substrate produced by the method of the invention can be stably controlled above 170W / m·K, and the pass rate of the flatness of the substrate is above 95%.

Description

technical field [0001] The invention relates to the technical field of aluminum nitride preparation, in particular to a sintering method of an aluminum nitride ceramic substrate. Background technique [0002] Aluminum nitride ceramic substrates are key materials for large-scale integrated circuit packaging and heat dissipation substrates in the electronic information industry. Packaging, power packaging, such as thyristors, rectifiers, etc.; including high-power devices, power electronic devices; automotive electronics IGBT and MOSFET power module packaging, etc. As a new functional material, aluminum nitride is widely used in various fields such as military and space technology communications, computers, instrumentation industry, electronic equipment, automobiles, household appliances, and office automation. [0003] During the sintering process of the aluminum nitride ceramic substrate, it will be affected by the oxygen impurities contained in the green body, the thermal ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/581C04B35/638C04B35/64
Inventor 汪文涛胡娟李大海
Owner 银川艾森达新材料发展有限公司
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