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A preparation method of two-dimensional material nanoribbon or microribbon

A two-dimensional material, nanobelt technology, applied in nanotechnology, metal material coating process, vacuum evaporation plating and other directions, can solve the problems of uncontrollable crystal domain direction, affecting the crystal structure and quality of materials, and reducing material performance, etc. To achieve the effect of controllable crystal domain orientation, simple device, neatly arranged coverage

Active Publication Date: 2020-10-09
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The domain direction of the existing two-dimensional materials is uncontrollable during the growth process. Due to the presence of some growth defects and grain boundaries in the prepared materials, the crystal structure and quality of the materials will be affected, and the performance of the materials will be reduced.

Method used

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  • A preparation method of two-dimensional material nanoribbon or microribbon

Examples

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Effect test

Embodiment 1

[0034] A method for preparing a two-dimensional material nanoribbon or microribbon, specifically comprising the following steps:

[0035] First, the tube furnace reaction chamber was evacuated to 10 -2 Torr, and purged with 200 sccm of argon to return to normal pressure.

[0036] will grow as figure 1 ST-X cut quartz substrate and Si / SiO shown 2 Rinse the substrate with a large amount of deionized water, put it into acetone solution and sonicate for 8 minutes, take out the substrate, put it into anhydrous ethanol solution and sonicate it for 8 minutes, take out the substrate again, put it into deionized water and sonicate it for 8 minutes, blow the cleaned substrate with inert gas Dry, where nitrogen is used.

[0037] In the vacuum chamber, heat the tungsten trioxide powder material to be formed into a thin film in the evaporator, make its molecules vaporize and escape from the surface, form a vapor flow, and deposit on the preset substrate Si / SiO 2 Surface, solidified to ...

Embodiment 2

[0044] A method for preparing a two-dimensional material nanoribbon or microribbon, specifically comprising the following steps:

[0045] First, the tube furnace reaction chamber was evacuated to 10 -2 Torr, and purged with 200 sccm of argon to return to normal pressure.

[0046] will grow as figure 1 ST-X cut quartz substrate and Si / SiO shown 2 Rinse the substrate with a large amount of deionized water, put it into acetone solution and sonicate for 6 minutes, take out the substrate, put it into an anhydrous ethanol solution and sonicate it for 7 minutes, take out the substrate again, put it into deionized water and sonicate it for 6 minutes, blow the cleaned substrate with inert gas Dry, where nitrogen is used.

[0047] In the vacuum chamber, heat the tungsten trioxide powder material to be formed into a thin film in the evaporator, make its molecules vaporize and escape from the surface, form a vapor flow, and deposit on the preset substrate Si / SiO 2 Surface, solidified ...

Embodiment 3

[0054] A method for preparing a two-dimensional material nanoribbon or microribbon, specifically comprising the following steps:

[0055] First, the tube furnace reaction chamber was evacuated to 10 -2 Torr, and purged with 200 sccm of argon to return to normal pressure.

[0056] will grow as figure 1 ST-X cut quartz substrate and Si / SiO shown 2 Rinse the substrate with a large amount of deionized water, put it into acetone solution and sonicate for 5 minutes, take out the substrate, put it into anhydrous ethanol solution and sonicate it for 5 minutes, take out the substrate again, put it into deionized water and sonicate it for 5 minutes, blow the cleaned substrate with inert gas Dry, where nitrogen is used.

[0057] In the vacuum chamber, heat the tungsten trioxide powder material to be formed into a thin film in the evaporator, make its molecules vaporize and escape from the surface, form a vapor flow, and deposit on the preset substrate Si / SiO 2 Surface, solidified to ...

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Abstract

The invention relates to a preparation method of a two-dimensional material nanobelt or microbelt, which adopts a chemical vapor deposition method and uses ST-X-cut quartz as a substrate for two-dimensional material growth, and the growth of the two-dimensional material after nucleation on the surface of the substrate is controlled by Due to the anisotropy of the substrate, nanobelts or microbelts with uniform arrangement and orientation are finally grown. The chemical vapor deposition method based on the anisotropic substrate used in the present invention has the characteristics of low cost, simple device, easy operation, and good controllability; by using high-vacuum thermal evaporation coating equipment to pre-evaporate a specified thickness on the source carrier Tungsten trioxide effectively avoids the occurrence of uneven spatial distribution of tungsten source caused by direct use of tungsten trioxide powder as tungsten source; the two-dimensional material nanobelt or microbelt prepared by the present invention has controllable and consistent crystal domain orientation , neatly arranged and wide coverage, can be used in the development and research of spintronic devices.

Description

technical field [0001] The invention relates to a method for preparing a two-dimensional material nano-belt or micro-belt with consistent orientation based on chemical vapor deposition. Background technique [0002] Since the first single-layer graphene obtained by the mechanical exfoliation method in 2004 by Professors Geim and Novoselov of the University of Manchester, UK, two-dimensional materials include transition metal dichalcogenides (TMDs), silicene, germanene and boron nitride. (BN) and so on have aroused extensive research interests of scientists. Compared with traditional materials, two-dimensional materials have good stability due to strong covalent bonds or ionic bonds in the layers, and at the same time, only weak van der Waals forces are acted on between layers, which has structural designability and controllability . As a new type of material, two-dimensional materials have good crystallinity and high specific surface area, and have shown superior performan...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/08C23C14/58B82Y40/00
Inventor 杨伟煌李华吴丽翔王高峰
Owner HANGZHOU DIANZI UNIV
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