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Molybdenum disulfide thin film gas sensitive material, preparation method and application

A technology of gas-sensing materials and thin-film materials, which is applied in the field of MoS2 thin-film gas-sensing materials, molybdenum disulfide thin-film gas-sensing materials and preparation fields, can solve the problem of inability to guarantee the thickness uniformity and the consistency of the number of layers, the growth quality and the growth area. The problems of poor controllability and low detection accuracy of complex gas environment have achieved the effect of remarkable NO2 response performance, low cost and high reliability

Inactive Publication Date: 2019-05-31
UNIV OF SHANGHAI FOR SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] (1) Two-dimensional MoS 2 The selectivity of the gas to be measured is poor, and the detection accuracy for complex gas environments is low;
[0005] (2) Two-dimensional MoS 2 The controllability of growth quality and growth area is poor, the growth area is small, and the uniformity of thickness and the number of layers in the area cannot be guaranteed;
[0006] (3) Most gas sensors need to work at a certain temperature, and the power consumption is high

Method used

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  • Molybdenum disulfide thin film gas sensitive material, preparation method and application
  • Molybdenum disulfide thin film gas sensitive material, preparation method and application
  • Molybdenum disulfide thin film gas sensitive material, preparation method and application

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Embodiment 1

[0049] A method for detecting NO 2 Gas MoS 2 A thin-film gas-sensitive material and a preparation method thereof, the preparation method comprising the following steps:

[0050] 1. Preparation of single-layer or few-layer MoS by CVD method 2 Thin film gas sensitive materials;

[0051] The aforementioned growth on SiO 2 / MoS on the surface of Si substrate 2 Sensitive material area is about 0.25cm 2 , the 2D MoS 2 Gas-sensitive material preparation method:

[0052] ①Using electron beam evaporation on SiO 2 / Si substrate is pre-plated to obtain a molybdenum layer with a thickness of 1nm. The electron beam evaporation is plated on the substrate at a deposition rate of 0.1A / s. The above-mentioned SiO 2 / SiO in Si substrate 2 The thickness of the layer is 300 nm.

[0053] ② Grinding block sulfur into powder and laying it flat in a porcelain boat, the block sulfur is 0.8g of high purity sulfur with a purity of 99.99%;

[0054] ③ Place the porcelain boat covered with high-p...

Embodiment 2

[0067] A method for detecting NO 2 Gas MoS 2 A thin-film gas-sensitive material and a preparation method thereof, the preparation method comprising the following steps:

[0068] 1. Preparation of single-layer or few-layer MoS by CVD method 2 Thin film gas sensitive materials;

[0069] The area of ​​the above-mentioned sensitive material grown on the surface of the substrate is about the size of a substrate, which is 0.1cm 2 , the 2D MoS 2 Nanosheets are prepared by a method comprising the following steps:

[0070] ①Using electron beam evaporation on SiO 2 / Si substrate is pre-plated to obtain a molybdenum atomic layer with a thickness of 1nm, and the electron beam evaporation is plated on the substrate with a deposition rate of 0.1A / s. The above-mentioned SiO 2 The thickness of the / Si substrate is 300 nm.

[0071] ② Grinding block sulfur into powder and laying it flat in a porcelain boat, the block sulfur is 0.8g of high purity sulfur with a purity of 99.99%;

[0072]...

Embodiment 3

[0080] A method for detecting NO 2 Gas MoS 2 A thin-film gas-sensitive material and a preparation method thereof, the preparation method comprising the following steps:

[0081] 1. Preparation of single-layer or few-layer MoS by CVD method 2 Thin film gas sensitive materials;

[0082] The area of ​​the above-mentioned sensitive material grown on the surface of the substrate is about the size of a substrate, which is 1cm 2 , the 2D MoS 2 Nanosheets are prepared by a method comprising the following steps:

[0083] ①Using electron beam evaporation on SiO 2 / Si substrate is pre-plated to obtain a molybdenum atomic layer with a thickness of 1nm. The electron beam evaporation is plated on the substrate at a deposition rate of 0.1A / s. The above-mentioned SiO 2 The thickness of the / Si substrate is 300 nm.

[0084] ② Grinding massive sulfur into powder and laying it flat in a porcelain boat. The massive sulfur is 0.8g of high-purity sulfur with a purity of 99.99%.

[0085] ③ P...

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Abstract

The invention discloses a molybdenum disulfide thin film gas sensitive material, a preparation method and application. A MoS2 thin film material obtained through a CVD method is adopted as the gas sensitive material. Firstly, a SiO2 / Si substrate is pre-plated with a molybdenum atom layer of a certain thickness at the deposition rate of 0.1 A / s through electronic beam evaporation; and then at a certain temperature, the SiO2 / Si substrate and S steam generate a combination reaction to generate the MoS2 thin film gas sensitive material. The two ends of the obtained substrate with a MoS2 nanosheetgrowing on the surface are plated with gold electrodes correspondingly; and a wire and the gold electrodes are bonded through a conductive silver adhesive, finally an insulation AB adhesive is used for fixing so as to increase the strength of a gas sensitivity testing device, the testing device is aged and packaged, and therefore preparation of a NO2 gas sensitive element is achieved. The preparedgas sensitive element can achieve detection to NO2 gas under room temperature, energy consumption is low, selectivity to distribution gas is good, and great significance is achieved on real-time monitoring of the NO2 gas.

Description

technical field [0001] The invention belongs to the technical field of nanometer materials, and relates to a method for detecting NO 2 Gas MoS 2 The invention relates to a thin-film gas-sensing material, in particular to a molybdenum disulfide thin-film gas-sensing material, a preparation method and an application thereof. technical background [0002] Molybdenum disulfide (MoS 2 ) is a transition metal disulfide, which is widely used in solid lubrication, catalysts, solar cells and sensors and other fields. Graphene-like monolayer or few-layer two-dimensional MoS 2 Not only has a layered structure similar to graphene, but also has an adjustable energy band gap, exhibiting excellent optical and electrical properties, and has great application potential in the fields of physics, chemistry, materials, and electronics. Currently preparing single-layer or few-layer MoS 2 There are two main categories of thin-film approaches: top-down and bottom-up. MoS with multilayer stru...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30C23C14/30C23C14/14G01N27/00
Inventor 王丁于鑫王宇裘赖云王现英杨俊和
Owner UNIV OF SHANGHAI FOR SCI & TECH
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