an α-fe 2 o 3 /tio 2 Nanocomposites and their preparation h 2 s gas sensor

A nano-composite material and gas sensor technology, applied in the field of H2S gas sensor, can solve the problems of high price, unsatisfactory reliability, and high working temperature of the sensor, reduce working energy consumption, large market development prospects, and good dispersion. Effect

Active Publication Date: 2021-12-21
SOUTH CHINA UNIV OF TECH
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Problems solved by technology

However, a single metal oxide semiconductor gas sensor has the following disadvantages: high operating temperature, poor selectivity, and unsatisfactory reliability
It has been reported in the literature that the use of Au nanoparticles to modify ZnO can reduce the working temperature, but the response time is as long as more than 1 minute, and the noble metal doping makes the sensor expensive and seriously pollutes the environment.
It has also been reported that CuO-doped SnO-based H 2 S gas sensitive material, although its sensitivity to H 2 S gas has good gas sensitivity, but its working temperature is still as high as 240°C

Method used

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  • an α-fe <sub>2</sub> o <sub>3</sub> /tio <sub>2</sub> Nanocomposites and their preparation h <sub>2</sub> s gas sensor
  • an α-fe <sub>2</sub> o <sub>3</sub> /tio <sub>2</sub> Nanocomposites and their preparation h <sub>2</sub> s gas sensor
  • an α-fe <sub>2</sub> o <sub>3</sub> /tio <sub>2</sub> Nanocomposites and their preparation h <sub>2</sub> s gas sensor

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Embodiment

[0039] (1) Take 12.1206g of ferric nitrate nonahydrate, add 300mL of distilled water to dissolve, and make 0.1mol / L ferric nitrate solution, pour the solution into a 1L flask, and then heat it with an oil bath, the temperature is controlled at about 85°C . Then take 3.997g of sodium hydroxide, add 100mL of distilled water to dissolve to make 1mol / L sodium hydroxide solution, and heat it to boiling, then quickly add it to the heated ferric nitrate solution, and use a magnetic stirrer at 700r / min Stir for 10 min. Then take 2.1198g of sodium carbonate, add 100mL of distilled water to dissolve, make 0.2mol / L sodium carbonate solution, and heat to boiling, then quickly add to the heated ferric nitrate solution, and stir at 700r / min with a magnetic stirrer 10min. Subsequently, the mixture solution was centrifuged at 5000r / min for 10min to separate the resulting brown Fe(OH) 3 , and centrifuged three times with distilled water to remove excess nitrate ions. The washed Fe(OH) 3 A...

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Abstract

The invention belongs to the field of gas sensor materials, and discloses an α-Fe 2 o 3 / TiO 2 Nanocomposite material and H2S gas sensor made from it. α‑Fe 2 o 3 Colloid and TiO 2 The colloids are ultrasonically mixed evenly, and then heated to 400-500°C for 2-4 hours to obtain α-Fe 2 o 3 / TiO 2 nanocomposites. α‑Fe 2 o 3 / TiO 2 The nano-composite material is mixed with ethanol and terpineol evenly, and then added dropwise to the surface of the cleaned flat electrode, dried at room temperature to form a gas-sensitive film, then heated to 400-500°C for 2-4 hours, and then cooled to obtain H 2 S gas sensor. The gas sensor of the invention has the advantages of low working temperature, fast response / recovery time, high sensitivity and good selectivity, and has great market development prospects.

Description

technical field [0001] The invention belongs to the field of gas sensor materials, in particular to an α-Fe 2 o 3 / TiO 2 Nanocomposites and H 2 S gas sensor. Background technique [0002] h 2 S is a colorless, corrosive, highly toxic and flammable gas. If the content in the air is too high, it will cause great harm to human health. Gas sensors based on metal oxide semiconductors have many advantages, including high sensitivity, low cost, and simple operation, such as TiO 2 , SnO 2 , CuO, ZnO, Fe 2 o 3 Sensors such as metal oxide semiconductors are widely used in the detection of various gases. However, a single metal oxide semiconductor gas sensor has the following disadvantages: high operating temperature, poor selectivity, and unsatisfactory reliability. At present, scholars at home and abroad have studied the TiO-based 2 and other semiconductor materials such as H 2 There are some researches on S gas sensor, but there are generally unfavorable factors such as ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/12C01G49/06C01G23/047
Inventor 沈文浩徐志武
Owner SOUTH CHINA UNIV OF TECH
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