Amorphous silicon thin film transistor
A technology of transistors and amorphous silicon thin films, applied in the field of thin film transistors, can solve the problem of small signal-to-noise ratio of sensors, and achieve the effects of improving signal-to-noise ratio, reducing noise, and reducing ratio
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Example Embodiment
[0052] The present invention also provides a method for manufacturing the above-mentioned thin film transistor, which includes the following steps:
[0053] Along the direction extending from the inner surface of the substrate to the surface, a substrate 1, a gate 2, a gate insulating layer 3 and an amorphous silicon semiconductor layer 4 are sequentially formed on the surface of the substrate;
[0054] A conduction band energy layer 5 is respectively formed on one end or both end surfaces of the amorphous silicon semiconductor layer, and;
[0055] An ohmic contact layer 7 is respectively formed on the conduction band energy layer 5 coupled to both ends of the amorphous silicon semiconductor layer 4; or on the conduction band distributed at one end of the amorphous silicon semiconductor layer 4 An ohmic contact layer 7 is formed on the energy layer 5, and an ohmic contact layer 7 is directly formed on the other end of the amorphous silicon semiconductor layer 4;
[0056] A source elec...
Example Embodiment
[0063] Example 1
[0064] The amorphous silicon thin film transistor of one embodiment of the present invention is such as figure 1 Shown includes: a glass substrate 1; a grid 2, combined on a surface of the substrate 1; a grid insulating layer 3, combined on the surface of the substrate and covering the grid 2; a semiconductor layer, combined with the grid insulating layer The surface away from the substrate; the semiconductor layer includes an amorphous silicon semiconductor layer 4; the amorphous silicon semiconductor layer 4 is bonded to the gate insulating layer 3 on the surface away from the gate 2; the ohmic contact layer 7, including each other The two parts of the gap are respectively combined on the two ends of the surface of the amorphous silicon semiconductor layer away from the gate insulating layer; the source electrode and the drain electrode are respectively combined on the ohmic contact layer 7; and the passivation layer 8. The semiconductor layer further include...
Example Embodiment
[0071] Example 2
[0072] The amorphous silicon thin film transistor of one embodiment of the present invention is such as figure 1 Shown includes: a glass substrate 1; a grid 2, combined on a surface of the substrate 1; a grid insulating layer 3, combined on the surface of the substrate and covering the grid 2; a semiconductor layer, combined with the grid insulating layer The surface away from the substrate; the semiconductor layer includes an amorphous silicon semiconductor layer 4; the amorphous silicon semiconductor layer 4 is bonded to the gate insulating layer 3 on the surface away from the gate 2; the ohmic contact layer 7, including each other The two parts of the space are respectively combined on the two ends of the surface of the amorphous silicon semiconductor layer away from the gate insulating layer; the source electrode and the drain electrode are respectively combined on the ohmic contact layer 7; and the passivation layer 8. The semiconductor layer further inclu...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap