Structure with oxide thin film and its preparation method
A technology of oxide film and oxide layer, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as device failure, device failure, device performance degradation, etc., to ensure that it will not fail, ensure effect of function
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Embodiment 1
[0072] see Figure 1 to Figure 3 , the invention provides a method for preparing a structure with an oxide film, the method for preparing a structure with an oxide film includes the following steps:
[0073] 1) Provide the substrate;
[0074] 2) forming the oxygen atom diffusion barrier layer on the upper surface of the substrate;
[0075] 3) forming the oxide film on the upper surface of the oxygen atom diffusion barrier layer.
[0076] In step 1), see figure 1 , providing a substrate 3 .
[0077] As an example, the substrate 3 may include, but not limited to, a silicon (Si) substrate.
[0078] In step 2), see figure 2 , forming the oxygen atom diffusion barrier layer 2 on the upper surface of the substrate 3 .
[0079] As an example, the upper surface of the substrate 3 may be treated by using a nitric acid oxidation treatment process, an ultraviolet light-induced oxidation process, an ozone-containing water wet oxidation process, a dry oxidation process, an ozone tre...
Embodiment 2
[0086] read on image 3 , the present invention also provides a structure with an oxide film, the structure with an oxide film comprising:
[0087] Oxide film 1;
[0088] Oxygen atom diffusion barrier layer 2, the oxygen atom diffusion barrier layer 2 is located on the lower surface of the oxide film 1;
[0089] A substrate 3 , the substrate 3 is located on the lower surface of the oxygen atom diffusion barrier layer 2 .
[0090] As an example, the oxide thin film 1 may include any oxide layer that can be used as a functional layer such as a carrier transport layer or an insulating layer. For example, the oxide film 1 may include but not limited to molybdenum oxide (MoO 3 )film.
[0091] As an example, the substrate 3 may include but not limited to a silicon substrate.
[0092] As an example, the oxygen atom diffusion barrier layer 2 may include a silicon oxide layer, and the thickness of the oxygen atom diffusion barrier layer 2 may include 1 nanometer (nm) to 10 nanomet...
Embodiment 3
[0095] see Figure 4 to Figure 9 , the present invention also provides a method for preparing a structure with an oxide film, the method for preparing a structure with an oxide film includes the following steps:
[0096] 1) preparing the oxide film;
[0097] 2) Forming the oxygen atom diffusion barrier layer on the upper surface of the oxide film.
[0098] As an example, see Figure 4 , before performing step 1), the following step is also included: providing a substrate 3 .
[0099] As an example, the substrate 3 may include, but not limited to, a silicon (Si) substrate.
[0100] In step 1), see Figure 5, preparing the oxide thin film 1 . Specifically, the oxide thin film 1 is prepared on the upper surface of the substrate 3 .
[0101] As an example, the oxide thin film 1 may be formed on the upper surface of the oxygen atom diffusion barrier layer 2 by using techniques such as sputtering, evaporation, chemical vapor deposition (CVD) or atomic layer deposition (ALD). ...
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Abstract
Description
Claims
Application Information
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