Preparation method for forest nanostructure and regulation and control method for forest nanostructure

A forest and nanotechnology, applied in the field of nanometers, can solve the problems of single-layer arrangement of difficult balls, cost, and increase in process difficulty

Active Publication Date: 2019-07-09
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

Among them, the electron beam exposure technology method needs to rely on expensive equipment and belongs to serial processing, which makes the preparation of large-area nano-forest structures costly and time-consuming, and it is difficult to achieve large-scale promotion; nano-sphere etching technology combined with anisotropic etching The nanoforest structure can be prepared in parallel, but the patterning of single-layer nanospheres requires strict control conditions, and it is difficult to achieve large-area single-layer arrangement of small balls, which increases the difficulty of t...

Method used

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  • Preparation method for forest nanostructure and regulation and control method for forest nanostructure
  • Preparation method for forest nanostructure and regulation and control method for forest nanostructure

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preparation example Construction

[0035] As described in the background art, due to the comprehensive consideration of nano-forest structure characteristics control, processing cost, and device integration application, it is urgent to develop a process method for preparing nano-forest structures with controllable morphology and characteristics. . The inventor of the present invention has studied the above problems and proposed a method for preparing a nano forest structure, which includes the following steps: S1, using a mixture including a coupling agent and a polymer to form a thin film layer on a substrate; S2, The thin film layer undergoes plasma bombardment to form the nano forest structure.

[0036] In the above-mentioned preparation method, a coupling agent is used as an inducer, and a nano-forest structure is prepared by using a plasma degumming process after mixing polymers. Using plasma to bombard the polymer layer can re-polymerize part of the product produced by the polymer to form a forest nanostruc...

Embodiment 1

[0054] The preparation method of the nano forest structure provided in this embodiment is as follows Figure 1 to Figure 3 As shown, including the following steps:

[0055] A substrate 101 is provided, and the substrate 101 is a single crystal silicon wafer;

[0056] Provide a mixture of coupling agent and polymer, wherein the coupling agent in the mixture is a coupling agent containing epoxy groups, and the polymer is a polyimide photoresist. The ratio of the two is 1:10. In a normal temperature and normal pressure yellow light environment, use a stir bar to mix the coupling agent and photoresist for 10 minutes, and let it stand for 30 minutes;

[0057] The mixture is spin-coated on the substrate 101 by spin coating. During the process, a low speed of 750 rpm is used for 8 seconds, and then a high speed of 4000 rpm is used for 25 seconds to form a film layer with a thickness of 8 μm. The substrate 101 of the spin-coated mixture is placed on a hot plate for baking, the baking tempe...

Embodiment 2

[0060] The difference between the preparation method of the nano forest structure provided in this embodiment and the embodiment 1 is:

[0061] The plasma gas source is argon gas, the flow rate of argon gas during the bombardment process is 20 sccm, the cavity pressure is 2 Pa, the time is 60 minutes, and the cavity power is maintained at 200 W during the entire bombardment process. After the bombardment process is over, the bottom of the nano-forest structure shrinks and gathers to form a thicker nano-fiber forest structure 104 with a height of about 4 μm, such as Figure 4 Shown.

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Abstract

The invention provides a preparation method for a forest nanostructure and a regulation and control method for the forest nanostructure. The preparation method for the forest nanostructure comprises the following steps: S1. employing a mixture comprising a couplant and a polymer to form a film layer on a substrate; and carrying out plasma bombardment on the film layer, thereby forming the forest nanostructure. Through carrying out bombardment on a polymer layer by adopting plasma, part of products produced by the polymer can be repolymerized to form a forest nanostructure; and the couplant isadded on the basis of the polymer, during plasma bombardment, groups of the polymer and the couplant in the film layer are activated, organic groups and inorganic groups of the couplant are interconnected with organic groups and inorganic groups of the polymer separately, and meanwhile, the organic groups of the couplant are in a crosslinked action, so that active groups produced from plasma bombardment are repolymerized, an original mixture layer disappears, and similarly, the forest nanostructure is formed.

Description

Technical field [0001] The invention relates to the field of nanotechnology, in particular to a method for preparing a nano forest structure and a method for regulating the nano forest structure. Background technique [0002] Nano forest structure is widely used in biological detection and photoelectric detection devices due to its special surface effects such as large surface-to-body ratio and multiple pores, which directly affects the working performance, preparation cost and application range of the device. A nano-forest structure with simple preparation process and controllable characteristics and morphology can effectively improve the performance of integrated devices, reduce the preparation cost, and broaden the application range. [0003] At present, a variety of nano-forest structure preparation methods have been reported, including electron beam exposure, nano-bead etching, and VLS (Vapor Liquid Solid) chemical synthesis growth technology. However, these technologies still...

Claims

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Application Information

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IPC IPC(8): B82B3/00B82Y40/00
CPCB82B3/0061B82Y40/00
Inventor 杨宇东毛海央
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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