Preparation method for forest nanostructure and regulation and control method for forest nanostructure
A forest and nanotechnology, applied in the field of nanometers, can solve the problems of single-layer arrangement of difficult balls, cost, and increase in process difficulty
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
preparation example Construction
[0035] As described in the background art, due to the comprehensive consideration of nano-forest structure characteristics control, processing cost, and device integration application, it is urgent to develop a process method for preparing nano-forest structures with controllable morphology and characteristics. . The inventor of the present invention has studied the above problems and proposed a method for preparing a nano forest structure, which includes the following steps: S1, using a mixture including a coupling agent and a polymer to form a thin film layer on a substrate; S2, The thin film layer undergoes plasma bombardment to form the nano forest structure.
[0036] In the above-mentioned preparation method, a coupling agent is used as an inducer, and a nano-forest structure is prepared by using a plasma degumming process after mixing polymers. Using plasma to bombard the polymer layer can re-polymerize part of the product produced by the polymer to form a forest nanostruc...
Embodiment 1
[0054] The preparation method of the nano forest structure provided in this embodiment is as follows Figure 1 to Figure 3 As shown, including the following steps:
[0055] A substrate 101 is provided, and the substrate 101 is a single crystal silicon wafer;
[0056] Provide a mixture of coupling agent and polymer, wherein the coupling agent in the mixture is a coupling agent containing epoxy groups, and the polymer is a polyimide photoresist. The ratio of the two is 1:10. In a normal temperature and normal pressure yellow light environment, use a stir bar to mix the coupling agent and photoresist for 10 minutes, and let it stand for 30 minutes;
[0057] The mixture is spin-coated on the substrate 101 by spin coating. During the process, a low speed of 750 rpm is used for 8 seconds, and then a high speed of 4000 rpm is used for 25 seconds to form a film layer with a thickness of 8 μm. The substrate 101 of the spin-coated mixture is placed on a hot plate for baking, the baking tempe...
Embodiment 2
[0060] The difference between the preparation method of the nano forest structure provided in this embodiment and the embodiment 1 is:
[0061] The plasma gas source is argon gas, the flow rate of argon gas during the bombardment process is 20 sccm, the cavity pressure is 2 Pa, the time is 60 minutes, and the cavity power is maintained at 200 W during the entire bombardment process. After the bombardment process is over, the bottom of the nano-forest structure shrinks and gathers to form a thicker nano-fiber forest structure 104 with a height of about 4 μm, such as Figure 4 Shown.
PUM
Property | Measurement | Unit |
---|---|---|
Particle size | aaaaa | aaaaa |
Diameter | aaaaa | aaaaa |
Height | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com