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Preparation method of high-efficiency P-type passivation contact crystalline silicon solar cell

A high-efficiency technology for crystalline silicon solar cells, applied in the field of solar cells, can solve problems such as difficulty in achieving high efficiency and failure to consider the influence of phosphorus diffusion, and achieve the effects of reducing pollution risks, reducing costs, and increasing production capacity

Active Publication Date: 2019-07-09
RISEN ENERGY (CHANGZHOU) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This process is a very idealized process, which does not take into account 1) the effect of high temperature annealing on phosphorus diffusion, and 2) the parallel effect caused by the tunneling of silicon oxide / microcrystalline silicon.
Therefore it is difficult to achieve high efficiency

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] A method for preparing a high-efficiency P-type passivated contact crystalline silicon battery, the steps are as follows:

[0030] (1) Use P-type monocrystalline silicon wafers as silicon substrates, firstly perform polishing (or texturing) treatment, the solution used is usually KOH solution, and KOH solution is generally based on KOH: texturing additive: H 2 The ratio of O=20:3:160 is prepared, and the temperature is 80°C; in addition, tetramethylammonium hydroxide (TMAH) solution can also be used instead;

[0031] (2) Then wash in 2% HF solution to clean the surface of the silicon wafer;

[0032] (3) PECVD equipment is used to grow tunneling silicon oxide film and doped p-type amorphous silicon film on the back surface, the thickness of tunneling silicon oxide is 100nm;

[0033] (4) Using PECVD equipment, deposit a borosilicate glass BSG film on the back with a thickness > 50nm, which is used as a mask layer to protect the back structure of the battery;

[0034] (5...

Embodiment 2

[0041] A method for preparing a high-efficiency P-type passivated contact crystalline silicon battery, the steps are as follows:

[0042] (1) Use P-type monocrystalline silicon wafers as silicon substrates, firstly perform polishing (or texturing) treatment, the solution used is usually KOH solution, and KOH solution is generally based on KOH: texturing additive: H 2 The ratio of O=20:3:160 is prepared, and the temperature is 80°C; in addition, tetramethylammonium hydroxide (TMAH) solution can also be used instead;

[0043] (2) Then wash in 3% HF solution to clean the surface of the silicon wafer;

[0044] (3) PECVD equipment is used to grow tunneling silicon oxide film and doped p-type amorphous silicon film on the back surface, the thickness of tunneling silicon oxide is 100nm;

[0045] (4) Using PECVD equipment, deposit a borosilicate glass BSG film on the back with a thickness > 50nm, which is used as a mask layer to protect the back structure of the battery;

[0046] (5) ...

Embodiment 3

[0053] A method for preparing a high-efficiency P-type passivated contact crystalline silicon battery, the steps are as follows:

[0054] (1) Use P-type single crystal silicon wafer as the silicon substrate, firstly perform polishing (or texturing) treatment, the solution used is usually KOH solution, and KOH solution is generally according to KOH: Texturing additive: H 2 The ratio of O=20:3:160 is prepared, and the temperature is 80°C; in addition, tetramethylammonium hydroxide (TMAH) solution can also be used instead;

[0055] (2) Then wash in 5% HF solution to clean the surface of the silicon wafer;

[0056] (3) PECVD equipment is used to grow tunneling silicon oxide film and doped p-type amorphous silicon film on the back, the thickness of tunneling silicon oxide is 100nm;

[0057] (4) Use PECVD equipment to deposit borosilicate glass BSG film on the back, with a thickness > 50nm, which is used as a mask layer to protect the back structure of the battery;

[0058] (5) Th...

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Abstract

The invention relates to the technical field of solar cells, in particular to a preparation method of a high-efficiency P-type passivation contact crystalline silicon solar cell. The preparation method comprises the following steps of: firstly, polishing (or texturing) a P-type monocrystalline silicon wafer serving as a silicon substrate; growing a tunneling silicon oxide film and a doped P-type amorphous silicon film on the back surface of the processed silicon wafer by adopting PECVD (Plasma Enhanced Chemical Vapor Deposition) equipment; depositing a BSG (Boron-Silicon Glass) film on the back surface by adopting the PECVD equipment; performing texturing treatment in KOH solution, and forming a pyramid structure on the front surface of a cell; utilizing a diffusion furnace; growing a passivation layer; and performing screen printing and sintering. According to the preparation method in the invention, a high-temperature crystallization process of amorphous silicon and a standard phosphorus diffusion process are completed in one step in a diffusion tube, so that the process flow is optimized, and the process steps are reduced, thereby greatly improving the productivity, reducing thepollution risk, facilitating reduction of the cost and realization of a high conversion efficiency, and laying a foundation for large-scale application.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for preparing a high-efficiency P-type passivated contact crystalline silicon solar cell. Background technique [0002] In recent years, passivated contact technology has received extensive attention in the field of crystalline silicon solar cells, and is considered to be the most promising high-efficiency cell technology for industrialization after PERC. At present, the highest efficiency of the cell with this structure is the N-type cell created by the Fraunhofer Institute for Solar Energy Systems in Germany, with an efficiency of 25.8%. Polysilicon film on a silicon layer. The passivated contact solar cell adopts the vacuum evaporation method to prepare metal electrodes, which cannot be mass-produced in the short term. [0003] At present, the methods for preparing polysilicon thin films mainly include: (1) first depositing an intrinsic amorphous silicon layer, ...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/068H01L31/0236
CPCH01L31/02363H01L31/068H01L31/1804H01L31/1864H01L31/1868Y02E10/547Y02P70/50
Inventor 万义茂崔艳峰袁声召黄强林海峰
Owner RISEN ENERGY (CHANGZHOU) CO LTD
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