A kind of resist underlayer film monomer and composition and pattern forming method

Abstract

The invention belongs to the field of photoetching, and particularly relates to a slushing compound lower-layer membrane monomer and composition as well as a patterning method. The slushing compound lower-layer membrane composition contains a slushing compound lower-layer membrane monomer shown in the formula (I), an aromatic polymer and a solvent, in the formula (I), Ar2 represents arylidene withthe carbon atomic number being 6-30, and R1 and R2 independently represent alkyl with the carbon atomic number being 1-6 or aryl with the carbon atomic number being 6-30. The slushing compound lower-layer membrane composition provided by the invention has the outstanding corrosion resistance, heat resistance, solvent solubility, gap filling feature and planarization feature. In addition, the slushing compound lower-layer membrane composition provided by the invention can have self cross-linking reaction through heating under the condition that no solidifying reaction additive is adopted, andgenerates no gas in the solidifying process, and accordingly can effectively prevent pollution problem of the slushing compound lower-layer membrane and equipment.

Description

technical field [0001] The invention belongs to the field of photolithography, and in particular relates to a resist underlayer film monomer and composition and a pattern forming method. Background technique [0002] The photolithography process is one of the most important process steps in semiconductor manufacturing. Its main function is to copy the pattern on the mask plate to the substrate through the photoresist to prepare for the next etching or ion implantation process. . A typical photolithography process includes: forming a material layer on a semiconductor substrate, coating a photoresist on the material layer, exposing and developing the photoresist layer to provide a photoresist pattern, using a photoresist The etchant pattern acts as a mask to etch the material layer. [0003] In recent years, with the high integration and high speed of semiconductor devices, as the lithography light source used in the formation of photoresist patterns, the short wavelength ha...

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Problems solved by technology

The spin-coating method requires the use of polymers with sufficient solubility in solvents; at the same time, in order to ensure good etch resistance, it is usually necessary to use polymers with extremely high carbon content, cross-linking agents that can react with polymers, and Additives that perform curing reactions (such as acidic curing catalysts), however, in the high-temperature baking process, the additives generate gas due to thermal decomposition, and there is a concern that the underlying resist film and equipment will be polluted

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