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Conductive diamond particles, conductive diamond electrode, and testing device

A technology of conductive diamond and diamond film, applied in the direction of diamond, measuring devices, electrodes, etc., can solve the problems of difficult expansion of equipment, difficulty in obtaining diamond electrodes, hard diamond film, etc., and achieve high crystallization quality, chemical stability and detection sensitivity excellent effect

Inactive Publication Date: 2019-07-30
RICOH KK +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This makes it difficult for equipment to scale up
Therefore, boron-doped diamond electrodes with large areas have been difficult to obtain until now
There is also the problem that the obtained boron-doped diamond film is very hard, and it is difficult to apply the processing required for the boron-doped diamond film to be used as an electrochemical electrode to the boron-doped diamond film

Method used

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  • Conductive diamond particles, conductive diamond electrode, and testing device
  • Conductive diamond particles, conductive diamond electrode, and testing device
  • Conductive diamond particles, conductive diamond electrode, and testing device

Examples

Experimental program
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Effect test

Embodiment 1

[0093]

[0094] In the following examples, a microwave plasma CVD apparatus 21 (MPCVD apparatus, available from ASTexMicrowave Systems) was used as a unit configured to form a boron-doped diamond film (BDD film) on a granular substrate. Figure 4 The MPCVD apparatus 21 is schematically illustrated.

[0095] As granular substrate 2, pulverized synthetic diamond powder (DP, available from Element Six, Micron+MDA, manufacturer with a nominal particle size of 3 to 6 microns) was used.

[0096] Diamond powder contains metal components and various sp 2 carbon. These impurities can adversely affect the final product. Therefore, in order to remove these impurities, the diamond powder was treated with aqua regia heated to 60 degrees Celsius for 30 minutes, and similarly treated with 30% hydrogen peroxide water heated to 60 degrees Celsius for 30 minutes to remove impurities contained in the diamond powder . The washed diamond powder was ultrasonically washed in ultrapure water / 2-...

Embodiment 2

[0118]Except that the growth time of the boron-doped diamond film by the MPCVD device is different from the preparation of the conductive diamond particles in Example 1 in 4 hours, the conductive diamond particles are prepared in the same manner as in Example 1, and the same method as in Example 1 evaluated in the same manner.

Embodiment 3

[0120] Except that the growth time of the boron-doped diamond film by the MPCVD device is 12 hours different from the preparation of the conductive diamond particles in Example 1, the conductive diamond particles are prepared in the same manner as in Example 1, and the same method as in Example 1 evaluated in the same manner.

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Abstract

Provided are conductive diamond particles including: particulate bases; and boron-doped diamond films on at least part of surfaces of the particulate bases, wherein an average particle diameter of theconductive diamond particles is greater than 0.5 micrometers, and wherein in Raman spectrum measurement of the conductive diamond particles at an excitation wavelength of 532 micrometers, a ratio ofan intensity of the conductive diamond particles at 1,580 cm-1 to an intensity of the conductive diamond particles at 1,332 cm-1 is less than 0.090.

Description

technical field [0001] The present disclosure relates to conductive diamond particles and conductive diamond electrodes comprising the same, as well as test devices using the same. Background technique [0002] Generally, boron-doped diamond is formed in a thin film shape on a flat plate-like substrate such as a silicon wafer by a chemical vapor deposition (CVD) method. This film forming method requires the reaction space to be under high vacuum conditions. This makes it difficult for the outfit to scale up. Therefore, boron-doped diamond electrodes having a large area have hitherto been difficult to obtain. There are also problems in that the obtained boron-doped diamond film is very hard, and it is difficult to apply the processing required for the boron-doped diamond film to be used as an electrochemical electrode to the boron-doped diamond film. [0003] In order to solve these problems, in recent years, attempts have been made to make boron-doped diamond into a granu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/26C23C16/27C25B11/12G01N27/30
CPCC01B32/26G01N27/308C23C14/0611C23C16/278C02F2001/46147C02F1/46114C25B11/043C01P2002/82C01P2004/03
Inventor 近藤刚史中岛启人相川达男汤浅真大佐佐崇宏小番昭宏
Owner RICOH KK