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A kind of lead iodide nano material and its preparation method and application

A technology of nanomaterials and lead iodide, applied in the direction of lead halide, nanotechnology, analytical materials, etc., can solve the problem of crystal shape regularity, shape controllability, crystal quality needs to be improved, solvent volatilization process is difficult to control, and operation steps are complicated to achieve excellent detection performance, improve preparation efficiency and yield, and achieve low preparation costs

Active Publication Date: 2020-06-26
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The disadvantage of this method is that the temperature required for the reaction is relatively high, and the operation steps are also complicated and time-consuming.
[0006] Another literature report by the 100 ℃ saturated PbI 2 The solution is directly dropped onto the target substrate, and different thicknesses of PbI can be obtained 2 Nanoflakes (Riccardo Frisenda et al., "Nanotechnology", Volume 28, 2017, 455703), although this process can prepare lead iodide nanomaterials, the obtained PbI 2 Nanomaterials have rough, low-quality surfaces
[0007] Although the above liquid phase method can prepare PbI 2 Nanomaterials, but due to the difficulty in controlling the chemical reaction process and solvent volatilization process, the shape regularity, shape controllability and crystal quality of the prepared crystals still need to be improved

Method used

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  • A kind of lead iodide nano material and its preparation method and application
  • A kind of lead iodide nano material and its preparation method and application
  • A kind of lead iodide nano material and its preparation method and application

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] 1. Cut the silicon wafer with 300nm oxide layer into several square pieces of 1cm×1cm, wash and set aside;

[0048] 2. Place the treated silicon wafer in a small petri dish without a lid, and then put it into a large petri dish with a small amount of deionized water;

[0049] 3. Insulate the large Petri dish at 20°C;

[0050] 4. Use a pipette gun to draw 50 μL of a supersaturated aqueous solution of 2 mg / mL lead iodide powder and drop it on the above-mentioned silicon wafer substrate;

[0051] 5. Cover the above-mentioned large petri dish, let it stand for about 10 minutes, wait for the solvent to evaporate completely, and get as follows: image 3 The two-dimensional lead iodide nanosheets shown.

[0052] image 3 The twists and turns in the photo are due to the phenomenon of metal probe jumping needles caused by rough particles on the surface of the sample.

Embodiment 2

[0054] 1. Cut the silicon wafer with 300nm oxide layer into several square pieces of 1cm×1cm, wash and set aside;

[0055] 2. Place the treated silicon wafer in a small petri dish without a lid, and then put it into a large petri dish with a small amount of deionized water;

[0056] 3. Insulate the large Petri dish at 50°C;

[0057] 4. Use a pipette gun to draw 50 μL of a supersaturated aqueous solution of 2 mg / mL lead iodide powder and drop it on the above-mentioned silicon wafer substrate;

[0058] 5. Cover the above-mentioned large petri dish, let it stand for about 10 minutes, wait for the solvent to evaporate completely, and get as follows: Figure 4 The two-dimensional lead iodide nanosheets shown.

[0059] Figure 4 The twists and turns in the photo are due to the phenomenon of metal probe jumping needles caused by rough particles on the surface of the sample.

Embodiment 3

[0061] 1. Cut the silicon wafer with 300nm oxide layer into several square pieces of 1cm×1cm, wash and set aside;

[0062] 2. Place the treated silicon wafer in a small petri dish without a lid, and then put it into a large petri dish with a small amount of deionized water;

[0063] 3. Insulate the large Petri dish at 30°C;

[0064] 4. Use a pipette gun to draw 50 μL of a supersaturated aqueous solution of 2 mg / mL lead iodide powder and drop it on the above-mentioned silicon wafer substrate;

[0065] 5. Cover the above-mentioned large petri dish, let it stand for about 10 minutes, wait for the solvent to evaporate completely, and get as follows: Figure 5 Two-dimensional lead iodide nanosheets on a silicon wafer are shown.

[0066] 6. Use glass, PET film and copper mesh carbon film as the target substrates respectively, repeat the above steps, keep warm at 30°C, and evaporate the solvent to obtain the two substrates on the glass, on the PET film and on the copper mesh carbon...

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Abstract

The invention discloses a preparation method of a lead iodide nanometer material. The preparation method comprises following steps: a target substrate is introduced into a small vessel; the small vessel is introduced into a large vessel with deionized water; a lead iodide saturated aqueous solution is introduced into the target substrate, the large vessel is sealed, standing is carried out until complete volatilization of the water on the target substrate is realized so as to obtain the two dimensional lead iodide nanometer material. The preparation method is simple; the high quality lead iodide nanometer material can be obtained at a relatively low temperature using very simple equipment without polluting the environment in a short time; preparation efficiency and yield are increased; andthe preparation cost is low. The invention also discloses the lead iodide nanometer material prepared using the above preparation method, and applications thereof. The lead iodide nanometer materialis of a laminated structure; the surface is smooth; and crystal quality is high. Ultraviolet detectors prepared from the two dimensional lead iodide nanometer material possess excellent detection performance.

Description

technical field [0001] The invention relates to the technical field of two-dimensional nanomaterials, in particular to a lead iodide nanomaterial and its preparation method and application. Background technique [0002] With the development of chip miniaturization and multi-function, the optical and electronic devices contained in it put forward higher requirements for materials. New two-dimensional materials such as graphene and transition metal chalcogenides have many unique properties that traditional materials do not have, so they have attracted extensive attention from academia and industry. [0003] Lead iodide (PbI 2 ) is a two-dimensional layered material with a band gap of 2.38-2.5eV due to the number of layers, and although a single layer of lead iodide is an indirect band gap semiconductor like a bulk silicon material, other layers Lead iodide is a direct band gap semiconductor material, so it can be used to prepare optoelectronic devices, such as ultraviolet li...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G21/16G01N21/17B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00C01G21/16C01P2002/72C01P2004/04C01P2004/61G01N21/17
Inventor 徐明生肖涵梁涛
Owner ZHEJIANG UNIV