37 results about "Lead(II) iodide" patented technology

Disclosed in the present invention is a method for in-situ NH4I-assisted preparation of CsPbI3 colloidal nanoplateles, comprising the following steps: S1. respectively preparing a lead iodide precursor solution, an ammonium iodide precursor solution, and a cesium oleate precursor solution; and S2. mixing the lead iodide precursor solution with the ammonium iodide precursor solution under stirring, adding the cesium oleate precursor solution for reaction to obtain a nanoplatele stock solution, and purifying and separating the nanoplatele stock solution to obtain CsPbI3 nanoplateles. In the present invention, in the method for the in-situ NH4I-assisted preparation of CsPbI3 colloidal nanoplateles, NH4I is used for in-situ replication synthesis of the CsPbI3 nanoplateles, the regulation of the growth kinetics of a system is achieved, the reaction process is more controllable, and the synthesized nanoplateles have a narrower peak width at half height, and a more uniform phase distribution, meeting requirements of light emitting in a red light range.

The invention relates to the technical field of photovoltaic solar cells, and discloses a perovskite thin film, a preparation method and application, the perovskite thin film is prepared from a perovskite precursor solution by adopting a one-step spin-coating method or a two-step deposition method, and the perovskite precursor solution comprises 2, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5- The perovskite material is prepared from 2, 4-oxazolidinedione, a raw material for synthesizing the perovskite material with the ABX3 crystal structure, and a solvent. According to the invention, 2, 4-oxazolidinedione (OD) molecules are simply introduced into a perovskite precursor solution, especially into an inorganic precursor solution (such as a lead iodide precursor solution), and the porous PbI2 can be obtained by utilizing the interaction between electron-donating groups in the OD molecules and lead iodide, so that when the organic ammonium salt is spin-coated in the second step, the porous PbI2 can be obtained. The organic ammonium salt solution can rapidly diffuse and fully react, so that the perovskite thin film with larger and more uniform crystal grains is obtained, and the residual amount of harmful PbI2 is remarkably reduced.

The invention belongs to the technical field of lead iodide crystal preparation, and discloses a lead iodide crystal and a method for adjusting the preferred orientation of a lead iodide crystal face, the method for adjusting the preferred orientation of the lead iodide crystal face comprises the following steps: step 1, adding an acid solution into a lead iodide solution, and diluting the lead iodide solution until the concentration of lead iodide is 10mM-50mM; 2, the diluted lead iodide solution is subjected to aging treatment, a solid-liquid mixture is obtained, the aging temperature ranges from 25 DEG C to 120 DEG C, the aging pressure is smaller than or equal to 6 Mpa, and the aging time ranges from 2 h to 4 h; and step 3, controlling the cooling rate of the solid-liquid mixture to be 6-10 DEG C / min for cooling, and then separating to obtain solid lead iodide. According to the method disclosed by the invention, the preferred growth condition of the lead iodide crystal face is controlled through concentration control, an aging process and a sectional cooling process under the condition that a complexing agent, a surfactant or a template agent does not need to be additionally added.

The invention discloses an ABX3 type perovskite material stabilized by a liquid crystal material and a preparation method of the ABX3 type perovskite material, and belongs to the field of semiconductor photoelectric materials and energy materials. The preparation method comprises the following steps: (1) uniformly mixing lead iodide and dodecyl dimethyl benzyl ammonium bromide, and carrying out heat treatment reaction to obtain a liquid crystal material solid; (2) dissolving the obtained liquid crystal material solid in an organic solvent to obtain a precursor solution; and (3) coating the surface of the ABX3 type perovskite thin film with the obtained precursor solution to obtain the ABX3 type perovskite material stabilized by the liquid crystal material. The ABX3 type perovskite which is high in quality and ultrahigh in stability is prepared through the method, the stability and the photoelectric property of the perovskite material are improved in order of magnitude, and the ABX3 type perovskite can be widely applied to the photoelectric fields of batteries, light emitting, detectors and the like; the preparation method has the characteristics of simplicity, easiness in control, convenience in operation, lower cost and the like, and is convenient for large-scale production in factories.

The present invention discloses a gallium nitride micro-wire array photodetector and a preparation method thereof. The photodetector includes: a silicon substrate, a methylammonium lead iodide layer, and an electrode; a plurality of grooves arranged in parallel are formed on the upper surface of the silicon substrate; an insulating layer covers the surface of the protruding portion on the upper surface of the silicon substrate; gallium nitride micro-wires are epitaxially grown on the two inner sidewalls of the grooves respectively, the extending direction of the gallium nitride micro-wires is the same as the extending direction of the grooves, and the gallium nitride micro-wires form a parallel micro-wire array; the electrode is disposed on the upper surface of the silicon substrate, and the methylammonium lead iodide layer is coated on the upper surface of the silicon substrate to cover the electrode and the gallium nitride micro-wires so as to form a double heterojunction. The photodetector has low dark current, fast response speed, high on / off current ratio, and long detection range, with good comprehensive performance, and the device structure is simple and easy to manufacture.

The application discloses a preparation method of a wide-bandgap perovskite photoactive layer, and comprises the following steps: S1, lead iodide powder, cesium iodide powder and ytterbium bromide powder are proportioned according to a proportioning molar ratio, and an inorganic target material is prepared by using a hot-press sintering process; S2, formamidinium hydriodide powder and methylammonium bromide powder are proportioned according to a proportioning molar ratio, and an organic target material is prepared by using a normal-temperature preparation process; S3, a pretreated substrate is placed on a magnetron sputtering sample table, the target materials prepared in steps S1 and S2 are respectively installed on corresponding radio frequency sputtering targets, and the background of a magnetron sputtering system is vacuumized; S4, high-purity argon gas is used as a sputtering gas, and a wide-bandgap perovskite thin film is prepared by using a magnetron co-sputtering method; the sputtering power of the inorganic target material prepared in step S1 is controlled, the sputtering power of the organic target material prepared in step S2 is controlled, and the thickness of the thin film is controlled, so that the high-quality thin film is prepared by using the differential target material preparation process.

The invention relates to the technical field of solar cells, in particular to a high-purity lead iodide synthesis method which comprises the following steps: S1, preparing a lead salt solution; s2, filtering to obtain a primary lead salt solution; s3, diluting the primary lead salt solution to 0.015-0.15 mol / L, carrying out activated carbon adsorption and ion exchange resin purification, carrying out reduced pressure evaporation, and washing to obtain a high-purity lead salt crystal; s4, dropwise adding the high-purity lead salt solution into the iodized salt solution for precipitation reaction, and filtering after aging; and S5, dispersing the precipitate in a first solvent, washing, and filtering to obtain the high-purity lead iodide. The invention relates to a high-purity lead iodide synthesis method, which comprises the following steps: applying a low-cost auxiliary solvent to a lead dissolution reaction, carrying out precipitation reaction on a lead salt solution, carrying out preliminary impurity removal treatment, carrying out resin adsorption and other combined processes, reducing the content of impurity elements in high-quality metal lead, and preparing high-purity lead iodide; the combined process is easy and convenient to operate, the used reagents are wide in source and low in cost, the final product is high in purity, operation conditions are mild, and the combined process is suitable for the requirement of large-scale process production.

The invention belongs to the technical field of material growth and quantum optics, and discloses a method for growing formamidine lead iodide perovskite with a multi-quantum well fluorescence oscillation peak, and the method comprises the following steps: placing formamidine iodide in an evaporation area of a tube furnace, and placing a lead iodide nanosheet substrate in a deposition area adjacent to the evaporation area; introducing inert gas into the tubular furnace cavity and maintaining a negative pressure environment; and controlling the temperature and sintering time of the evaporation area and the deposition area in stages to realize directional transmission and controllable film formation of the gaseous precursor, and cooling to obtain the formamidine lead iodide perovskite with the multi-quantum well fluorescence oscillation peak. Based on tubular furnace equipment, by controlling the placement positions of drugs and samples and the sintering temperature and time of a tubular furnace, the growth conditions of perovskite can be flexibly controlled, and the method has the characteristics of low cost, simplicity in operation and low-temperature controllability; the multi-quantum well fluorescence oscillation peak phenomenon of the prepared sample shows the huge potential of the ultrathin perovskite in the field of quantum optics.

The application discloses a method for preparing a heterojunction perovskite photodetector, comprising the following steps: preparing an electron transport layer; dissolving lead iodide and lead chloride in a mixed solution of dimethylformamide, N-methylformamide and N-methylpyrrolidone to obtain a precursor solution; in an air atmosphere, spin-coating the precursor solution onto the electron transport layer, immediately immersing into an anti-solvent after uniform spreading, and obtaining a PbI2-PbCl2 film after crystallization; spin-coating a methylammonium iodide solution onto the PbI2-PbCl2 film, and obtaining a perovskite film after vacuum annealing; spin-coating a long-chain ligand solution onto the three-dimensional perovskite film, vacuum annealing, and obtaining a perovskite heterojunction film; sequentially preparing a hole transport layer, a hole blocking layer and an anode on the perovskite heterojunction film to obtain the heterojunction perovskite photodetector. The method has the advantages that the prepared photodetector has high external quantum efficiency and high detection rate, and the preparation is simple.

The invention relates to a perovskite precursor solution, a perovskite thin film, a preparation method of the perovskite thin film and a photovoltaic module. The perovskite precursor solution comprises a perovskite precursor, an additive and a mixed solvent; the perovskite precursor is prepared from formamidine hydriodate and lead iodide; the additive comprises cesium iodide and methylamine hydrochloride; the mixed solvent is prepared from N, N-dimethyl formamide, N-methyl pyrrolidone and cyclohexyl pyrrolidone. The composition of the perovskite precursor solution is blended, the high-quality perovskite thin film with the micro-suede surface is spontaneously formed in the perovskite crystallization process, the micro-suede surface structure can increase the contact area between a perovskite layer and a subsequent functional layer, a tight mechanical interlocking effect is generated between the micro-suede surface structure and the interface of the functional layer, and the performance of the perovskite thin film is improved. Therefore, the interface adhesive force of the subsequent functional layer and the metal electrode is obviously improved, and the problem of performance degradation of the perovskite assembly caused by the packaging process is solved.

The invention provides an organic-inorganic hybrid perovskite nanowire material, a preparation method thereof and a gas sensor, and relates to the technical field of semiconductor materials and devices. The preparation method comprises the following steps: mixing lead iodide, methylamine hydriodic acid / cesium iodide and phenylethylamine hydriodic acid / butylammonium iodide in a set molar ratio according to the metering number in the general formula of the organic-inorganic hybrid perovskite, and adding a perovskite benign solvent to obtain an organic-inorganic hybrid perovskite precursor solution; and dripping the organic-inorganic hybrid perovskite precursor solution on a substrate, exposing the organic-inorganic hybrid perovskite precursor solution in an anti-solvent atmosphere, and crystallizing to obtain the organic-inorganic hybrid perovskite nanowire material. The organic-inorganic hybrid perovskite nanowire material with a three-dimensional network structure is prepared by controlling the concentration of the perovskite precursor solution and the experimental temperature based on raw materials in a molar ratio required by a quasi-two-dimensional perovskite crystal, and the obtained product has a higher specific surface area.

The invention discloses a methylamine formamidino perovskite single crystal, a preparation method thereof and an X-ray detector, and belongs to the technical field of perovskite single crystal X-ray detectors. Methyl iodide amine, formamidino hydriodate and lead iodide are used as raw materials, anhydrous acetic acid is used as an additive, growth is carried out in a solvent through a seed crystal method, and the methylamine formamidino perovskite single crystal is obtained. Anhydrous acetic acid and formamidine generate hydrogen-bond interaction, formamidine is pulled to enter crystal lattices, so that phase separation is eliminated, acetate and Pb coordinate to delay formation of a lead-iodine framework, the speed of methylamine and formamidine entering the crystal lattices is balanced, meanwhile, the stability of a methylamine formamidine perovskite precursor solution is improved, stable growth of methylamine formamidine perovskite single crystals is achieved, and the methylamine formamidine perovskite single crystals are obtained. The single crystal has the advantages of high crystallinity, low defect density, large size and favorable X-ray response performance. The methylamine formamidine perovskite single crystal is high in controllability in the growth process, and the preparation method is high in operability, simple and easy to implement, short in preparation period, low in equipment requirement and low in cost.

The invention provides a perovskite cell, a laminated cell, a photovoltaic module, a power utilization device and a power generation device, the perovskite cell comprises a perovskite thin film, the perovskite thin film comprises a perovskite material and a modifier, the modifier comprises lead iodide and an ammonium salt, the ammonium salt comprises at least one of compounds having a structural formula represented by a formula (1): R1R2R3R4N + Y-(1), in the formula (1), the Y-(1) is at least one of lead iodide and ammonium salt, and in the formula (1), the Y-(1) is at least one of lead iodide and ammonium salt. R1 comprises one of substituted or unsubstituted C4-C20 alkyl groups, and R2-R4 respectively and independently comprise one of a hydrogen atom and substituted or unsubstituted C1-C20 alkyl groups; y <-> comprises halogen ions and / or halogen-like ions, and N is a nitrogen atom. The perovskite cell provided by the invention has excellent photoelectric conversion efficiency and stability.

The invention relates to the technical field of film preparation, in particular to a preparation method for preparing an ultra-thick formamidine and methylamine mixed perovskite film through a blade coating method and application of the super-thick formamidine and methylamine mixed perovskite film through the blade coating method. The preparation method comprises the following steps that a precursor solution is prepared, specifically, methyl ammonium iodide, formamidine ammonium iodide and lead iodide are put into a ternary mixed solvent, and preparation of the precursor solution is completed; and performing deposition treatment, namely depositing the precursor solution prepared in the step 1 on a glass substrate by adopting a blade coating method to form a thin film, and completing the deposition treatment of the glass substrate. In the ternary mixed solvent, ethylene glycol monomethyl ether ensures rapid drying, N, N-dimethylformamide stabilizes the morphology of the wet film, dimethyl sulfoxide regulates and controls the crystallization process, and after the perovskite wet film prepared under the system is subjected to vacuum flash evaporation and thermal annealing, the perovskite wet film can be rapidly dried. And finally, the high-quality perovskite thin film with large crystal grains, uniform distribution, black and bright mirror surfaces on the upper surface and the lower surface and no void defect is formed, and the requirement of a high-performance solar cell on an active layer structure is met.

The invention discloses a preparation method of centimeter-sized needle-shaped lead iodide, which comprises the following steps: putting an iodine elementary substance and a lead elementary substance at one end in a quartz glass tube; vacuumizing and sealing the quartz glass tube; placing the sealed quartz glass tube in a tubular furnace, and simultaneously suspending one end without raw materials outside; performing first heat treatment to separate the iodine elementary substance from the lead elementary substance in the quartz tube; carrying out second heat treatment to melt the lead elementary substance and react with the iodine elementary substance; carrying out third heat treatment to enable the reaction to be fully carried out; and finally, cooling to room temperature to obtain centimeter-sized needle-shaped lead iodide.

The invention provides a preparation method of a perovskite thin film, a perovskite / silicon laminated cell and a preparation method. The method comprises the following steps: depositing lead iodide and cesium bromide on a crystal silicon bottom cell through thermal evaporation to obtain an inorganic composite film, processing the inorganic composite film by using a fused bis-heterocyclic compound solution to obtain a mesoporous structure composite film, preparing an ammonium salt layer on the mesoporous structure composite film, and annealing to form a perovskite film. The solution can promote recrystallization of lead iodide, bicyclic sulfur / nitrogen atoms are coordinated with lead ions to form a five-membered ring chelate, nucleation of lead iodide is delayed, layered stacking is hindered by a bicyclic rigid structure, and vertically-oriented nano-channels are synergistically formed to assist ammonium salt diffusion. R2 long-chain alkyl groups are orderly stacked on a perovskite (001) crystal face to reduce surface energy, the crystal is promoted to preferentially nucleate on the (001) face and vertically and orderly grow, an R1 group, perovskite A-site cations and halide ions form hydrogen bonds, ion escape during annealing is inhibited, defects are reduced, and finally the quality of the perovskite thin film and the performance of the laminated cell are improved.

The application discloses a MAPbI3 perovskite film based on defect competition regulation and a preparation method thereof. The preparation method of the MAPbI3 perovskite film based on defect competition regulation comprises the following steps: S1, methylammonium iodide and lead iodide are added into a solvent to obtain a precursor solution; S2, a substrate is pretreated; S3, the precursor solution is deposited on the substrate by adopting an anti-solvent spin coating method to obtain a precursor film; and S4, the precursor film is subjected to annealing treatment to obtain the MAPbI3 perovskite film based on defect competition regulation. The molar ratio of the methylammonium iodide and the lead iodide is (0.8-1.2):1. By adjusting the stoichiometric ratio of the precursor, the application realizes the synergistic regulation between the grain growth behavior and the defect kinetics, thereby reducing the non-radiation recombination, improving the carrier kinetic behavior and improving the stability of the perovskite film.

The invention relates to a method for improving the thermal stability of a perovskite material through chemical competitive coordination, and belongs to the technical field of photoelectric materials and device stability. According to the invention, a two-site additive eperisone hydrochloride (EH) is introduced into a lead iodide precursor solution, and competitive coordination with a residual solvent DMSO is realized in the preparation process of the perovskite device, so that volatilization of DMSO is effectively promoted, and multiple degradation pathways caused by DMSO are inhibited. The residual DMSO is easy to cause the formation of a nano gap at a crystal boundary, so that ion migration and non-radiative recombination are intensified; the moisture absorption characteristic can also initiate moisture infiltration, so that Pb-I bonds are promoted to be hydrolyzed and converted into a non-photoactive delta phase; meanwhile, lattice stress generated by local degradation can further cause irreversible PbI2 segregation. According to the passivation strategy, DMSO removal and vacancy passivation are remarkably promoted, meanwhile, the interface moisture resistance is enhanced, and the stability of the perovskite phase is cooperatively improved.

This invention discloses a method for preparing methylammonium chloride-doped lead-based perovskite thin films. The method involves adding methylammonium chloride to methylammonium iodide to form a mixture. Under high-temperature conditions in a vacuum tube furnace, this mixture forms a gaseous compound that reacts with lead iodide to produce a high-quality perovskite thin film. This method provides guidance for the preparation of high-quality perovskite thin films and is beneficial for promoting the industrial application of perovskite devices.

The application relates to a formamidinium-based perovskite material based on variable valence cation doping and a preparation method thereof. The material takes formamidinium iodide and lead iodide as starting reactants, takes cobalt iodide, manganese iodide, iron iodide, cadmium iodide or antimony iodide as a dopant, is doped with variable valence metal cations through a one-step synthesis method, and stable formamidinium-based perovskite material is obtained. Compared with undoped formamidinium lead iodide, the stability of the formamidinium-based perovskite material is greatly improved, and the phase transition time is improved by two orders of magnitude, which means that the application has great significance in designing new high-efficiency and stable photoelectric conversion devices. The product size is controllable, the cost is low, the repeatability is good, the operation is simple and the like, the material can be used for in-depth research on the intrinsic properties of organic-inorganic hybrid perovskite materials, and new high-efficiency photoelectric conversion devices are further designed. The material overcomes the difficulty that the existing perovskite material has poor stability in the application process, and has higher stability compared with the perovskite material obtained by only changing the preparation method, and has good application prospect in the field of photoelectric conversion.

The present application belongs to the technical field of waste lead-acid battery resource and lead iodide crystal preparation, and discloses a method for preparing lead iodide crystal by reducing lead paste through a short wet process, which comprises the following steps: S1: collecting waste lead paste from waste lead-acid batteries and reducing the waste lead paste to obtain reduced lead paste; the reduced lead paste is placed in an iodine salt solution and stirred to obtain a preliminary reaction solution; S2: adding a hydroiodic acid solution to the preliminary reaction solution, and then performing solid-liquid separation to obtain a crude crystal; S3: dissolving the crude crystal in an organic solvent, and then performing solid-liquid separation; the obtained filtrate is a lead iodide solution; S4: recrystallizing the lead iodide solution, and then performing solid-liquid separation to obtain a purified lead iodide crystal. Through the improvement of the overall design of the reaction participants and the process flow, the preparation of the lead iodide crystal can be realized through a short process, and the technical problems of long process steps, large reagent input, and low purity of the lead iodide product can be effectively solved.

The invention discloses a perovskite material for improving water stability based on bidentate ligand covalent passivation and a preparation method and application thereof. The preparation method comprises the following steps: introducing a bidentate ligand of mercaptocarboxylic acid (2-11 carbons, such as mercaptoacetic acid (TGA), mercaptopropionic acid (MPA), mercaptobutyric acid (MBA), mercaptovaleric acid (MAA), mercaptohexanoic acid (MHA) and the like) into a lead iodide methyl ammonium (MAPbI3) perovskite crystal lattice, and forming a stable Pb-S covalent bond by utilizing mercapto (-SH) and Pb < 2 + >; meanwhile, carboxyl (-COOH) and methylamine ions (MA < + >) in mercaptocarboxylic acid are catalyzed through 1-ethyl-(3-dimethylaminopropyl) carbodiimide hydrochloride (EDC) and N-hydroxysuccinimide (NHS) to form amido bonds, synchronous double-site covalent passivation of perovskite crystal lattices is achieved, and the water-stable mercaptocarboxylic acid-MAPbI3 perovskite material is formed. According to the method, decomposition of MAPbI3 in a water environment is effectively inhibited, and the water stability and the photoelectric property of the material are remarkably improved. The bidentate ligand synchronous covalent bond passivation method provided by the invention provides a new thought for improving the water stability and the photoelectric property of the perovskite material, and the prepared material has a wide application prospect in photoelectric devices such as solar cells, optical detectors and photoelectrochemical sensors, and is particularly suitable for long-term stable work in a high-humidity environment.

The application discloses a method for preparing FAPbI3 perovskite film by two-step blade coating in air. The method uses ionic liquid methylamine formate as a solvent of lead iodide to prepare a uniform and porous lead iodide film at a proper temperature, which is beneficial to the penetration reaction of formamidinium iodide in the second step of blade coating. Meanwhile, proper pressure applied by a blade in the second step of blade coating is also helpful to the penetration and reaction of formamidinium iodide. By the method, stable alpha-phase FAPbI3 perovskite can be obtained, the whole preparation process is carried out in air and on the same equipment, and the preparation of high-quality FAPbI3 perovskite film can be simply and quickly completed. Meanwhile, the method can be used for preparing large-area perovskite film, and has high industrialization prospect. Finally, the photoelectric conversion efficiency of the prepared device can reach 22.3%, which is in a leading position in the preparation of FAPbI3 perovskite photovoltaic devices by blade coating in air.

The invention relates to the technical field of lead iodide materials, and discloses a method for testing the molar ratio of lead to iodine in a lead iodide material, the lead iodide material comprises a lead iodide main component and impurities, the chemical formula of the lead iodide main component is PbxIy, the ratio of x to y is the molar ratio of lead to iodine in the lead iodide main component, and x is greater than or equal to 1. The mass percentage of the impurities in the lead iodide material is greater than or equal to 0 wt%; the test method comprises the following steps: carrying out X-ray diffraction test on the lead iodide material to obtain the variety and mass percentage of impurities; the method comprises the following steps: weighing a lead iodide material with the mass of m0, carrying out an inductively coupled plasma test to obtain the mass m1 of a lead element in the lead iodide material, obtaining the mass of an iodine element in the main component of lead iodide through the mass percentage of impurities, m0 and m1, and further obtaining the ratio of x to y in the main component of lead iodide. By adopting the test method, the test accuracy can be effectively improved, and the quality of lead iodide can be effectively ensured.

The application discloses a method for generating a broadband spectrum by using femtosecond laser etching MAPbI3, wherein methylammonium iodide and lead iodide are used to prepare MAPbI3 micrometer strips, a femtosecond laser with a specific wavelength is used to etch the MAPbI3 micrometer strips, and a femtosecond laser with another wavelength is used to excite the etched sample, so that a broadband spectrum is successfully generated; a variety of spectral characterization technologies are combined to confirm that the broadband spectrum is derived from self-trapped exciton (STE) luminescence, and structural characterization and theoretical analysis reveal that the femtosecond laser etching causes the loss of specific ions in the material, triggers lattice distortion, and further induces the formation of STE.

A method for producing a perovskite-based ink, the method comprising the steps of: 3-y Br y (I) (wherein y is a number in the range of 0 to 0.2, preferably 0.05 to 0.1), (a) dissolving lead iodide (PbI) in at least one organic solvent selected from dimethyl sulfoxide (DMSO), dimethyl formamide (DMF), γ-butyrolactone (GBL), γ-valerolactone (GVL) or a mixture thereof, preferably dimethyl sulfoxide (DMSO), dimethyl formamide (DMF) or a mixture thereof, to obtain a first solution; and (b) adding cesium iodide (CsI) and a compound represented by the general formula (II): R to a part of the first solution obtained in the step (a). x H 4-x (c) dissolving at least one ammonium salt represented by the general formula (III): R NI(II) (wherein R represents a linear or branched C1-C4 alkyl group, preferably a methyl group, and x is an integer ranging from 2 to 4, preferably 2) in a part of the first solution obtained in step (a) to obtain a second solution; and x H 4-x (d) mixing the second solution obtained in step (b) with the third solution obtained in step (c) to obtain a perovskite-based ink, wherein in step (d), the molar ratio of the at least one ammonium salt represented by general formula (II) to the at least one ammonium salt represented by general formula (III) is in the range of 0:100 to 50:50. The perovskite-based ink can be advantageously used in optoelectronic applications, particularly in perovskite-based photovoltaic cells (or solar cells), light-emitting diodes (LEDs), X-ray sensors, and photodetectors.

The invention discloses a two-dimensional perovskite single crystal material as well as a preparation method and application thereof. The preparation method of the two-dimensional perovskite single crystal material comprises the following steps: dissolving lead iodide in hydroiodic acid to obtain a lead iodide solution; a C5 hydrocarbon compound is added into the lead iodide solution and fully dissolved, a mixed solution is obtained, and the C5 hydrocarbon compound is at least one of n-pentane, isopentane and cyclopentane; evaporating the mixed solution until the mixed solution is saturated, and then carrying out cooling crystallization, washing and drying to obtain the two-dimensional perovskite single crystal material. Through a steric hindrance engineering strategy, the precise regulation and control of the two-dimensional perovskite multi-exciton recombination rate is realized on the molecular scale, the unique advantages of high precision, high stability and low process complexity are shown, the important scientific value is achieved, and the huge industrialization potential is also shown.

The invention relates to the technical field of photoelectric conversion materials, in particular to a perovskite precursor material for photoelectric conversion and a preparation method thereof. The precursor material is prepared from the following raw materials: lead iodide, stannous iodide, methyl amine iodide and a modified hyperbranched polymer; the modified hyperbranched polymer is prepared from the following raw materials in parts by weight: 2 to 3 parts of triethyl borate, 2 to 3 parts of 1, 3-propylene glycol, 0.5 to 0.8 part of 2-amino-6-chlorobenzimidazole, 0.3 to 0.5 part of acryloyl chloride, 0.3 to 0.4 part of acrylic acid, 1 to 1.5 parts of trifluoroethyl methacrylate and 0.4 to 0.6 part of dopamine. The prepared perovskite precursor can improve the photoelectric conversion efficiency and improve the stability.