42 results about "Lead(II) iodide" patented technology

This invention discloses method and equipment for preparing lead iodide single crystals from lead iodide melt, which comprises the steps of: cleaning an ampule, filling it with lead iodide powders, degassing and sealing the ampule, growing the single crystals and cooling. The method can effectively suppress the decomposition of lead iodide melt and the vaporization of iodine, and can remove segregated lead. The ampule is made of a quartz tube, and comprises a seed crystal bag, a growth chamber, a connecting vessel, a lead tube, a loading bag anb a hook. After filling, the ampule is placed into a two-stage temperature range vertical tubular furnace to finish the growth of the single crystals. The as-grown single crystals are orange and semi-transparent with sizes up to Phi (15-20)X30 mm. The electrical resistivity of as-grown single crystals can reach 1012-1013 ohm .cm, thus the single crystals have wide applications, especially as room temperature nuclear radiation detector.

The invention discloses a cesium lead iodine photoelectric detector and a preparation method thereof. The photoelectric detector successively comprises, from bottom to top, a substrate layer, a firstelectrode layer, a perovskite cesium lead iodine photosensitive layer, a second electrode layer and a device protective layer. The perovskite cesium lead iodine photosensitive layer has a thickness of10 to 22nm, and successively comprises, from bottom to top, a first lead iodide layer, a first perovskite cesium lead iodine CsPbI3 photosensitive layer, cesium iodide, a second perovskite cesium lead iodine CsPbI3 photosensitive layer, and a second lead iodine layer. The perovskite cesium lead iodine photosensitive layer is prepared by chemical vapor deposition. In the invention, the cesium iodide and the lead iodide are alternately deposited by chemical vapor deposition so as to chemically react at an interface to form a perovskite cesium lead iodine film layer to form a sandwich structure.Such structure contributes to improvement in the stability of a perovskite cesium lead iodine film.

The invention belongs to the technical field of waste recovery, and particularly relates to a recovery method of a waste lead-acid battery. The recovery method comprises the following steps of, firstly, converting lead elements in lead paste of a waste lead-acid battery into lead sulfate through a wet process; then desulfurizing the obtained lead sulfate and converting the desulfurized lead sulfate into an aqueous solution of divalent lead ions; and finally, mixing and reacting the obtained aqueous solution of divalent lead ions with a potassium iodide solution under an acidic condition to prepare the lead iodide. According to the recovery method, lead iodide is prepared from a main source of secondary lead of a waste lead-acid battery through a wet process which is almost pollution-free and mild in reaction conditions, so that the problems that pollution can occur in the traditional lead iodide preparation process and lead resources of the waste lead-acid battery are recycled are solved.

The invention relates to a perovskite absorbing layer of a solar cell, in particular to a method for increasing the crystal density of the perovskite absorbing layer of a solar cell. The method of the present invention comprises the following steps: uniformly mixing the polypropylene resin and the compatibilizer, then casting the base film after being melted and plasticized by an extrusion system; film, and then spread the heat-shrinkable film on the surface of the alumina ceramic substrate; dissolve methylamine iodide and lead iodide in DMF solvent to obtain a perovskite precursor solution, and spin-coat the precursor solution on the heat-shrinkable Then dry it at 40~60℃ to obtain the membrane material; use a mold to compact the membrane material and keep the pressure greater than 5MPa; anneal the membrane material at 100~140℃ for 1~1.5h; heat treatment in a vacuum furnace. During the crystal recrystallization process of the perovskite absorbing layer of the present invention, the arrangement of crystal grains is more compact and compact, and the photoelectric conversion efficiency thereof is improved.

The invention provides a preparation method and application of a high-quality organic-inorganic hybrid perovskite film. The steps are as follows: dissolving diphenylthiocarbazone as an additive in a lead iodide precursor solution, and spin-coating Annealing to obtain lead iodide film; high-quality organic-inorganic hybrid perovskite film was prepared by spin-coating organic amine solution. The perovskite film prepared based on diphenylthiocarbazone additive has a uniform and dense morphology. Diphenylthiocarbazone is a typical lead indicator, and the nitrogen and sulfur atoms contained in it can be combined with the lead in lead iodide. Coordination occurs, which can effectively slow down the rate of perovskite formation from the reaction of lead iodide and organic amines, which is conducive to the growth of grains into uniform and dense perovskite films, and can enhance the structural stability of perovskites. The device of this perovskite thin film can obtain higher device efficiency. The perovskite thin film of the present invention can be directly used to assemble perovskite solar cells.

The invention discloses a preparation method and application of a two-dimensional lead iodide flake. The preparation method comprises the following steps: cleaning the substrate; adding a quantitative supersaturated lead iodide aqueous solution dropwise on the cleaned substrate; Two-dimensional lead iodide flakes are obtained after volatilization. The preparation method of the present invention is simple in operation, low in cost, and environmentally friendly, and can quickly and high-yield prepare two-dimensional lead iodide flakes, and the prepared two-dimensional lead iodide flakes have large size, smooth surface, and high crystal quality, and can be processed applied to photodetectors.

The invention discloses a method for preparing a doped perovskite thin film battery by dissolving lead iodide at room temperature. The battery structure is as follows from bottom to top: 1 conductive substrate, 2 electron transport layer, 3 doped perovskite absorbing layer, 4 hole transport layer, 5 top electrode. The perovskite absorbing layer is doped by first dissolving ammonium chloride and lead iodide in a DMF solvent at a certain molar ratio, shaking at room temperature for 2 to 3 minutes, and then spin-coating on the substrate, and then depositing an organic halide by CVD reaction. Thin (MAI, FAI or MAI / FAI mixture) or solution spin-coated organic halides. The use of ammonium chloride to assist in dissolving lead iodide to prepare perovskite thin film batteries can effectively avoid lead iodide insoluble or easy to crystallize during the spin coating process, as well as the metastable state in the preparation process of polar solvents, which is beneficial The preparation of thin films, the nucleation and growth of perovskite, improve the conversion efficiency of batteries. Moreover, large-area perovskite thin-film batteries can be fabricated at room temperature.

The invention discloses a two-dimensional organic-inorganic hybrid perovskite film material with a vertical orientation structure, which is characterized in that the preparation process is as follows: firstly formamidine hydroiodide, organic amine hydroiodide, lead iodide, crystal The growth regulator is mixed and dissolved in an organic solvent to obtain a precursor solution; then the precursor solution is spin-coated to form a film and annealed. The present invention adopts the method of introducing large-volume organic amine and crystal growth regulator into the three-dimensional organic-inorganic hybrid perovskite material, and through the design of the chemical structure of the active layer material and the regulation of the crystal structure, on the one hand, the crystal film has a vertical The characteristics of substrate orientation growth are obtained to obtain good carrier transport ability, and on the other hand, the stability of the material in a humid environment is improved. It is of great significance to realize high stability and high efficiency optoelectronic devices that can be processed by large area solution.