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42 results about "Lead(II) iodide" patented technology

Lead(II) iodide or lead iodide is a salt with the formula PbI₂. At room temperature, it is a bright yellow odorless crystalline solid, that becomes orange and red when heated. It was formerly called plumbous iodide.

CsPbI3 mixed-phase perovskite thin film and controllable preparation method thereof

The invention relates to a CsPbI3 mixed-phase perovskite thin film and a controllable preparation method thereof. The controllable preparation method comprises the following operation steps that 1, adding octadecene, oleylamine, oleic acid and lead iodide into a three-neck flask, heating and stirring at the temperature of 140-180 DEG C under the vacuum condition to serve as a reaction solvent; 2,dissolving cesium stearate and oleic acid in octadecene to form a precursor solution; and 3, rapidly injecting the precursor solution into a reaction solvent, rapidly cooling with water, and then centrifugally purifying to obtain the perovskite CsPbI3 quantum dot; and 4, spin-coating a dispersion liquid of the CsPbI3 quantum dots on the surface of a clean glass sheet, and carrying out heat treatment in an atmospheric environment to obtain the CsPbI3 mixed-phase perovskite thin film. The CsPbI3 mixed-phase perovskite thin film is prepared by the method disclosed by the invention. According to the invention, CsPbI3 is used for obtaining a monomer to emit white light, and the material is novel; based on a full-inorganic perovskite material, the perovskite material is more stable than a traditional perovskite material; phase regulation of CsPbI3 is achieved through the temperature and time of heat treatment, and the method is simple and easy to implement.
Owner:NANJING UNIV OF SCI & TECH

Perovskite solution with controllable and adjustable operation time window, cell, preparation method and application

The invention discloses a perovskite solution with a controllable and adjustable operation time window, a cell, a preparation method and application, and belongs to the field of perovskite solar cells. The perovskite solution comprises perovskite ABX3, an acetonitrile solvent and a coordination type solvent, A site is a methylamine ion, B site is a lead ion, X site is a halide ion, and the coordination type solvent is selected from dimethyl sulfoxide, N-methyl pyrrolidone and 4-tert-butylpyridine. The preparation method comprises the following steps: placing perovskite single crystals or iodine methylamine and lead iodide powder prepared by stoichiometric ratio in a methylamine atmosphere to obtain a yellow perovskite precursor solution, or dissolving the perovskite single crystals or iodine methylamine and lead iodide powder prepared by stoichiometric ratio in a methylamine ethanol solution to obtain a viscous yellow perovskite precursor solution, and then, uniformly mixing the coordination solvent and acetonitrile to obtain the perovskite ink. The invention also provides the perovskite cell, the preparation method and the application. The ink disclosed by the invention can realize adjustment of a processing time window and is extremely high in industrial applicability.
Owner:HUBEI UNIV

Perovskite thin film, preparation method and application

The invention discloses a perovskite thin film, a preparation method and application, and the method comprises the following steps: respectively putting M powder and lead iodide powder into a heating boat, putting a substrate and the heating boat into a vacuum coating machine, vacuumizing, putting the heating boat below the substrate, and electrically heating the heating boat to volatilize the M powder and the lead iodide powder to obtain a lead source thin film; transferring the substrate to another cavity, and depositing a layer of amine salt on the lead source film; and annealing to obtain the perovskite thin film. According to the invention, different lead sources are evaporated in vacuum to obtain the lead source film with high flatness and high uniformity; the perovskite thin film is prepared by adopting a two-step method, the problem that a large-area perovskite thin film is difficult to prepare by adopting a traditional two-step solution spin-coating method is effectively solved, an organic solvent is not used in the preparation process, and the damage effect of the organic solvent on a functional layer below the perovskite thin film and the adverse effect on the environment are avoided; the obtained perovskite thin film can be applied to preparation of photoelectric devices.
Owner:深圳无限光能技术有限公司

Alpha-FAPbI3 perovskite quantum dot, preparation method and photoelectric device

ActiveCN114644919AImprove stabilityReduce the concentration of defect statesMaterial nanotechnologySolid-state devicesQuantum dotCarboxylic acid
The invention belongs to the technical field of perovskite materials, and particularly relates to an alpha-FAPbI3 perovskite quantum dot, a preparation method thereof and a photoelectric device. The preparation method of the alpha-FAPbI3 perovskite quantum dot comprises the following steps: dissolving formamidine iodine and lead iodide in a solvent to obtain a mixed solution; dissolving organic carboxylic acid oleic acid, organic amine oleylamine and short-chain organic carboxylic acid in the mixed solution to obtain a precursor solution; the carbon chain length of the short-chain organic carboxylic acid is 1-4; and adding the precursor solution into an anti-solvent, carrying out mixing treatment, and carrying out separation and purification to obtain the alpha-FAPbI3 perovskite quantum dot. According to the preparation method, the organic carboxylic acid oleic acid and the organic amine oleylamine are used as synergistic passivation ligands to effectively reduce the surface defect concentration, meanwhile, the short-chain organic carboxylic acid is introduced to inhibit the crystal nucleation speed and inhibit the agglomeration between the quantum dots, a ligand protection layer is formed on the surfaces of the quantum dots, and the stability and the luminescence property of the perovskite quantum dots are improved.
Owner:SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI

A method for preparing and transferring ultrathin large size lead iodide nanosheets

The invention discloses a method for preparing and transferring ultra-thin and large-sized lead iodide nanosheets. The method comprises uniformly mixing pure lead iodide powder and ultrapure water according to a certain proportion, heating and stirring at a certain temperature, and then using The solution method is to drop a certain volume of solution on a substrate with a metal coating on the surface at a certain temperature to prepare ultra-thin lead iodide nanosheets; use the characteristics of growing lead iodide nanosheets on the liquid surface to drain or orient them Transfer to the target substrate or sample, non-destructive ultra-clean transfer of ultra-thin large-sized lead iodide nanosheets can be achieved. The invention can prepare and transfer ultra-thin and large-size lead iodide nanosheets with a size of 50-200um, a thickness of 3-20nm, a single crystal structure and high quality, and has important reference significance for growing more nanosheets based on solution method. Physical mechanisms such as molecular dynamics can be further studied, and the transfer method provided by the present invention has the advantages of non-destructive ultra-cleaning, good controllability, high repeatability, high yield, low cost, etc., and is beneficial to industrial production.
Owner:NANJING UNIV OF TECH

Preparation method of inorganic CsPbxSn<1-x>(BryI<1-y>)3 nanowire and photoelectric detector thereof

The invention discloses a preparation method of an inorganic CsPbxSn<1-x>(BryI<1-y>)3 nanowire and application thereof in a photoelectric detector. The method comprises the following steps: sequentially spin-coating a lead iodide DMF solution on the surface of a conductive glass substrate at room temperature to form a film, and annealing to obtain a PbI2 film; carefully putting the film into a closed culture dish of an absolute methanol solution mixed with cesium iodide and stannous iodide, standing for 3-6 hours, taking out, cleaning with isopropanol, and air-drying; placing place the productin a culture dish containing an absolute methanol solution of cesium bromide for 0-120 minutes, taking out the product, cleaning, air-drying and annealing; and coating a layer of chlorobenzene solution of PMMA on the product in a spinning manner, and annealing to obtain the inorganic CsPbxSn<1-x>(BryI<1-y>)3 nanowire. The preparation method is simple to operate, low in cost and good in stability;performance parameters are similar to those of a full-lead perovskite nanowire photoelectric detector. The Sn element is successfully used for partially replacing the Pb element, the toxicity of perovskite is reduced, and a far-reaching influence is brought to the development of perovskite photoelectric devices.
Owner:HUBEI UNIV
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