Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method and application of a high-quality organic-inorganic hybrid perovskite film

A perovskite and thin film technology, applied in the field of preparation of high-quality organic-inorganic hybrid perovskite thin films, can solve the problems of fast perovskite crystallization rate, insufficient overall efficiency and stability of perovskite solar cells, etc. Achieve high device efficiency

Active Publication Date: 2021-03-30
SHANXI UNIV
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the problems of fast crystallization rate of perovskite and insufficient overall efficiency and stability of perovskite solar cells, the present invention provides a preparation method and application of a high-quality organic-inorganic hybrid perovskite film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method and application of a high-quality organic-inorganic hybrid perovskite film
  • Preparation method and application of a high-quality organic-inorganic hybrid perovskite film
  • Preparation method and application of a high-quality organic-inorganic hybrid perovskite film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] A method for preparing a high-quality organic-inorganic hybrid perovskite film, comprising the steps of:

[0032] (1) Clean the indium tin oxide glass sequentially ultrasonically with detergent, distilled water, and absolute ethanol. After cleaning, place the cleaned ITO substrate in a UV-ozone cleaning machine for surface treatment for 45 minutes.

[0033] (2) Dilute the 15wt% tin dioxide aqueous solution with distilled water (the volume ratio of tin dioxide aqueous solution stock solution to distilled water is = 1:5), ultrasonically mix, and spin-coat the diluted tin dioxide aqueous solution on the ITO substrate , the spin-coating speed is 3000rpm, the spin-coating time is 30s, and annealed at 150°C for 30min to form a tin dioxide electron transport layer on the ITO substrate.

[0034] (3) In the glove box, dissolve lead iodide in N,N-dimethylformamide / dimethyl sulfoxide mixed solution (volume ratio of N,N-dimethylformamide to dimethyl sulfoxide =7:1), heated overnig...

Embodiment 2

[0041] A method for preparing a high-quality organic-inorganic hybrid perovskite film, comprising the steps of:

[0042] (1) Clean the indium tin oxide glass sequentially ultrasonically with detergent, distilled water, and absolute ethanol. After cleaning, place the cleaned ITO substrate in a UV-ozone cleaning machine for surface treatment for 45 minutes.

[0043] (2) Dilute the 15wt% tin dioxide aqueous solution with distilled water (the volume ratio of tin dioxide aqueous solution stock solution to distilled water is = 1:5), ultrasonically mix, and spin-coat the diluted tin dioxide aqueous solution on the ITO substrate , the spin-coating speed is 3000rpm, the spin-coating time is 30s, and annealed at 150°C for 30min to form a tin dioxide electron transport layer on the ITO substrate.

[0044] (3) In the glove box, dissolve lead iodide in the mixed solution of N,N-dimethylformamide / dimethyl sulfoxide (the volume of N,N-dimethylformamide and dimethyl sulfoxide Ratio = 10:1), ...

Embodiment 3

[0051] A method for preparing a high-quality organic-inorganic hybrid perovskite film, comprising the steps of:

[0052] (1) Clean the indium tin oxide glass sequentially ultrasonically with detergent, distilled water, and absolute ethanol. After cleaning, place the cleaned ITO substrate in a UV-ozone cleaning machine for surface treatment for 45 minutes.

[0053] (2) Dilute the 15wt% tin dioxide aqueous solution with distilled water (the volume ratio of tin dioxide aqueous solution stock solution to distilled water is = 1:5), ultrasonically mix, and spin-coat the diluted tin dioxide aqueous solution on the ITO substrate , the spin-coating speed is 3000rpm, the spin-coating time is 30s, and annealed at 150°C for 30min to form a tin dioxide electron transport layer on the ITO substrate.

[0054] (3) In the glove box, dissolve lead iodide (containing 5wt% cesium iodide) in N,N-dimethylformamide / dimethyl sulfoxide mixed solution (N,N-dimethylformamide and The volume ratio of dim...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a preparation method and application of a high-quality organic-inorganic hybrid perovskite film. The steps are as follows: dissolving diphenylthiocarbazone as an additive in a lead iodide precursor solution, and spin-coating Annealing to obtain lead iodide film; high-quality organic-inorganic hybrid perovskite film was prepared by spin-coating organic amine solution. The perovskite film prepared based on diphenylthiocarbazone additive has a uniform and dense morphology. Diphenylthiocarbazone is a typical lead indicator, and the nitrogen and sulfur atoms contained in it can be combined with the lead in lead iodide. Coordination occurs, which can effectively slow down the rate of perovskite formation from the reaction of lead iodide and organic amines, which is conducive to the growth of grains into uniform and dense perovskite films, and can enhance the structural stability of perovskites. The device of this perovskite thin film can obtain higher device efficiency. The perovskite thin film of the present invention can be directly used to assemble perovskite solar cells.

Description

technical field [0001] The invention relates to a preparation method and application of a high-quality organic-inorganic hybrid perovskite film, and belongs to the technical field of organic-inorganic hybrid materials and photoelectric materials. Background technique [0002] The problem of resource depletion and environmental pollution caused by the massive consumption of traditional fossil energy is becoming more and more serious, and the solution of these problems depends on the extensive development and utilization of new energy. Among all new energy sources, solar energy has been widely used by humans due to its low cost, no pollution, and no geographical restrictions. Solar photovoltaic cells are currently one of the important ways to utilize solar energy. [0003] In recent years, perovskite solar cells (PSCs) have attracted widespread attention from scientists because they overcome the shortcomings of traditional dye-sensitized solar cells, which are easy to leak and...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/00H01L51/42
CPCH10K71/12H10K30/15Y02E10/549
Inventor 侯文静韩高义
Owner SHANXI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com