Unlock instant, AI-driven research and patent intelligence for your innovation.

Humidity sensor and manufacture method thereof

A manufacturing method and sensor technology, applied in the manufacture of microstructure devices, instruments, scientific instruments, etc., can solve the problems of reduced device reliability, small interdigital capacitance, and difficulty in improving detection sensitivity, so as to ensure reliability and increase process. Step, effect of high sensitivity

Inactive Publication Date: 2019-08-09
HANGZHOU WEIMING XINKE TECH CO LTD +1
View PDF10 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The advantage of this solution is that ASIC and MEMS devices can be integrated on one chip, which has a great advantage in cost. However, due to the small interdigital capacitance, it belongs to the field of small signal processing, and the improvement of detection sensitivity is a problem that plagues the industry.
[0004] In order to improve the sensitivity of the interdigital capacitance, one technical solution is to abandon the deposition of a passivation layer on the interdigital to maximize the filling of humidity-sensitive materials, but the disadvantage is that the reliability of the device is reduced; another technical solution is to deposit a passivation layer After opening the solder block, etch the passivation layer between the fingers. This solution improves the device sensitivity to a certain extent and achieves the effect of device protection, but the etching amount of the passivation layer between the fingers It is difficult to control, and secondly, when the electrode line width drops to a certain level, the solution cannot be implemented because it does not meet the CMOS process standard

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Humidity sensor and manufacture method thereof
  • Humidity sensor and manufacture method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] In this embodiment, the substrate 1 is a silicon wafer substrate on which an ASIC readout circuit has been processed. The electrode layer 2 is an aluminum layer. The passivation layer 3 is a CMOS standard passivation layer. The barrier layer is a silicon nitride layer. The humidity sensitive layer 5 is a polyimide moisture sensitive film.

[0033] The manufacturing process of the CMOS-MEMS integrated humidity sensor described in this embodiment is:

[0034] S1: The substrate 1 with capacitance readout circuit is processed on the silicon wafer through standard CMOS technology, and the electrical connection interface between ASIC and MEMS capacitance sensor is reserved on the substrate; the substrate is processed on the CMOS process platform Complete the substrate of the ASIC readout circuit, and reserve the MEMS capacitor interface, which is convenient for CMOS-MEMS integration;

[0035] S2: Deposit an electrode layer (aluminum) on the substrate 1 by magnetron sputte...

Embodiment 2

[0040] S1: The substrate 1 with capacitance readout circuit is processed on the silicon wafer through standard CMOS technology, and the electrical connection interface between ASIC and MEMS capacitance sensor is reserved on the substrate;

[0041] S2: Deposit a layer of aluminum on the substrate 1 by magnetron sputtering or evaporation process, and further, define the first electrode 21, the second electrode 22, the third electrode 23 and the pressing electrode by photolithography and etching process Solder bump 24;

[0042] S3: Deposit a passivation layer 3 on the aluminum layer through a PECVD process, and further, through a photolithography and etching process, completely remove the passivation layer in the region of the first electrode 21 and the second electrode 22, and retain the third electrode 23 Part of the passivation layer in the area and the passivation layer on the ASIC circuit define the sensor chip area; at the same time, the pad area is opened synchronously to ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a humidity sensor and a manufacture method thereof. The sensor comprises a substrate, an electrode layer, a passivation layer, a barrier layer and a sensitive layer; the electrode layer including first, second and third electrodes is arranged on the substrate, and the first and second electrodes are arranged staggeredly in an interdigital shape; the passivation layer is arranged in a third electrode area of the electrode layer and on a connecting lead and an ASIC circuit; and the barrier layer is arranged on the electrode layer. The humidity sensor and manufacture method have the advantages that (1) the interdigital capactive humidity sensor with guarantee of the reliability and high sensitivity as well as the manufacture method of the sensor are provided; (2) the sensor and method are especially suitable for a CMOS technical platform of 90-500nm process, and can be used to manufacture a CMOS-MEMS integrated humidity sensor chip; and (3) a technology of manufacturing a shielding ring and the interdigital electrode simultaneously is provided, and no technical steps are added.

Description

technical field [0001] The invention relates to the field of semiconductor chips and MEMS sensors, in particular to a COMS-MEMS humidity sensor and a manufacturing method thereof. Background technique [0002] In aerospace, smart home, cold chain logistics, clean workshop, agriculture and animal husbandry and other fields, it is necessary to detect or monitor changes in environmental humidity to maintain the humidity in an appropriate state. The detection principles of humidity mainly include resistive, piezoresistive and capacitive, among which the capacitive sensor is widely used because of its simple structure, wide detection range, high reliability, and easy integration with CMOS technology. [0003] At present, there are mainly two design methods for capacitive sensors. One is the flat plate structure design. The humidity sensitive layer is placed in the interlayer between the first and second electrode plates, and the second electrode plate has a number of holes to all...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/22B81B7/00B81C1/00
CPCB81B7/0032B81C1/00246G01N27/223
Inventor 肖韩叶乐於广军
Owner HANGZHOU WEIMING XINKE TECH CO LTD