Check patentability & draft patents in minutes with Patsnap Eureka AI!

Preparation method of Mo back electrode for CIGS thin-film solar cell

A solar cell, back electrode technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as low resistivity

Active Publication Date: 2019-08-20
ANHUI ZHENGXIBIAOWANG NEW ENERGY CO LTD
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the deficiencies in the prior art, the present invention provides a method for preparing a Mo back electrode for CIGS thin film solar cells, which solves the problem that the current method for preparing Mo back electrodes for CIGS thin film solar cells cannot be used without changing the deposition pressure. Realize the continuous deposition of Mo thin film in the same working room to achieve the technical problem of strong bonding force and low resistivity requirements between glass substrate and Mo thin film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] (1) Weighing 80g of metal Mo particles and 50g of absolute ethanol are placed in a ball mill jar together, 2 Ball mill for 1 hour under protection, then add 8g of γ-aminopropyltriethoxysilane coupling agent, continue ball milling for 2 hours, dry and evaporate to remove absolute ethanol, pass through a 100-mesh sieve, and obtain metal Mo powder with an average particle size ≤ 150um;

[0032] (2) Weigh 10g of glass powder with an average particle size of ≤2.6um, ultrasonically disperse it in 100mL of absolute ethanol solvent added with 1g of sodium silicate dispersant and 2g of fumed silica anti-settling agent, and prepare a glass dispersion; Among them, the glass powder is composed of 20%wtPbO, 20%wtSiO 2 , 25%wtTiO 2 , 15%wtB 2 o 3 , 20%wtMgO composition;

[0033] (3) Add 15g of high-modulus potassium silicate solution into the high-speed mixer, and under the stirring state of 300rpm at a rotating speed, first add 3g of sodium silicate dispersant and 5g of fumed si...

Embodiment 2

[0039] (1) Weigh 100g metal Mo particles and place them in a ball mill jar together with 50g absolute ethanol. 2 Carry out ball milling under protection for 3 hours, then add 15g of γ-aminopropyltriethoxysilane coupling agent, continue ball milling for 4 hours, dry and evaporate to remove absolute ethanol, and pass through a 100-mesh sieve to obtain metal Mo powder with an average particle size of ≤150um;

[0040] (2) Weigh 15g of glass powder with an average particle diameter of ≤2.6um, ultrasonically disperse it in 100mL of absolute ethanol solvent added with 3g of sodium silicate dispersant and 3g of fumed silica anti-settling agent, and prepare a glass dispersion; Among them, the glass powder is composed of 20%wtPbO, 20%wtSiO 2 , 25%wtTiO 2, 15%wtB 2 o 3 , 20%wtMgO composition;

[0041] (3) Add 25g of high-modulus potassium silicate solution into the high-speed mixer, and in the stirring state of 500rpm, first add 8g of sodium silicate dispersant and 10g of fumed silic...

Embodiment 3

[0047] (1) Weigh 90g metal Mo particles and place them in a ball mill jar together with 50g absolute ethanol. 2 Ball mill for 2 hours under protection, then add 12g of γ-aminopropyltriethoxysilane coupling agent, continue ball milling for 3 hours, dry and evaporate to remove absolute ethanol, and pass through a 100-mesh sieve to obtain metal Mo powder with an average particle size of ≤150um;

[0048] (2) Weigh 12g of glass powder with an average particle size of ≤2.6um, ultrasonically disperse it in 100mL of absolute ethanol solvent added with 2g of sodium silicate dispersant and 2.5g of fumed silica anti-settling agent, and prepare a glass dispersion ; Wherein, glass powder is made of 20%wtPbO, 20%wtSiO 2 , 25%wtTiO 2 , 15%wtB 2 o 3 , 20%wtMgO composition;

[0049] (3) Add 20g of high-modulus potassium silicate solution into the high-speed mixer, and in the stirring state of 400rpm, first add 5g of sodium silicate dispersant and 8g of fumed silica anti-sedimentation agent...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
melting pointaaaaaaaaaa
electrical resistivityaaaaaaaaaa
electrical resistivityaaaaaaaaaa
Login to View More

Abstract

The invention relates to the technical field of CIGS thin film solar cell preparation and further discloses a preparation method of a Mo back electrode for a CIGS thin-film solar cell. The preparationmethod comprises the following steps: metal Mo powder with the average particle size of less than or equal to 150 microns and a uniformly dispersed glass powder binding phase are added into an inorganic carrier solvent high-modulus potassium silicate solution; under the combined action of an inorganic dispersing agent sodium silicate and an inorganic anti-settling agent fumed silica, the metal Mopowder is in a uniform dispersion state in the slurry, so metal Mo slurry is prepared; a glass substrate is continuously coated with the metal Mo slurry in the same working chamber under the condition that the deposition air pressure is not changed; and then curing treatment is carried out to prepare a Mo back electrode for the CIGS thin film solar cell. According to the invention, the technicalproblem is solved that an existing preparation method of the Mo back electrode for the CIGS thin-film solar cell cannot achieve continuous deposition of the Mo thin film in the same working chamber under the condition that the deposition air pressure is not changed so as to meet the requirements of high binding force and low resistivity of a glass substrate and the Mo thin film.

Description

technical field [0001] The invention relates to the technical field of preparation of CIGS thin-film solar cells, in particular to a method for preparing a Mo back electrode for CIGS thin-film solar cells. Background technique [0002] Metal Mo thin film materials have been widely used in many fields such as soft X-ray reflective elements, large-area integrated circuits, and solar cell electrodes, especially as Cu(In,Ga)Se 2 (CIGS) back electrode material for thin film solar cells. The main reason is that Mo has the following characteristics: (1) high thermal stability (melting point as high as 2623 °C) and chemical stability; (2) resistivity of 5.2×10 -6 Ω cm, which can meet the requirements of solar cell current extraction electrodes; (3) It can form a good ohmic contact with the CIGS absorber layer (its work function is about 4.95eV), reducing the interface recombination of carriers; (4) The coefficient of thermal expansion ( ~4.5×10 -6 / K) and the thermal expansion co...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/18
CPCH01L31/022425H01L31/1876Y02E10/50
Inventor 王崧
Owner ANHUI ZHENGXIBIAOWANG NEW ENERGY CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com