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Storage device based on graphene quantum dot/polyaniline/gold nanoparticle/polyvinyl alcohol composite material and preparation method thereof

A technology of graphene quantum dots and gold nanoparticles, applied in semiconductor/solid-state device manufacturing, nanotechnology for information processing, nanotechnology for materials and surface science, etc., can solve the problem of large specific surface area, easy agglomeration, etc. problems, to achieve the effect of simple operation, good storage performance, and easy access to raw materials

Active Publication Date: 2019-08-30
WUHAN INSTITUTE OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the large specific surface area of ​​graphene and gold nanoparticles, it is easy to agglomerate, so it must be dispersed in a solution or other matrix

Method used

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  • Storage device based on graphene quantum dot/polyaniline/gold nanoparticle/polyvinyl alcohol composite material and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] 1) According to the literature report (Phys.Chem.Chem.Phys., 2013,15,9907), prepare graphene quantum dots by chemical method;

[0030] 2) Add 25 mg of graphene quantum dots, 100 μL of aniline, and 230 mg of ammonium persulfate to 10 mL of aqueous hydrochloric acid at pH=1, stir at 0°C for 24 hours, centrifuge, wash, and dry to obtain graphene quantum dots / polyaniline composite materials;

[0031] 3) Add 10 mg of graphene quantum dots / polyaniline composite material into 100 mL of water containing Tween 80, then add 1 mL of gold perchlorate aqueous solution with a concentration of 10 mg / mL, stir at 0 °C for 1 hour, centrifuge, wash and dry Obtain graphene quantum dot / polyaniline / gold nanoparticle composite material after drying;

[0032] 4) Add 20 mg of graphene quantum dots / polyaniline / gold nanoparticles composite material into 12 mL of polyvinyl alcohol aqueous solution with a concentration of 10 mg / mL, and after ultrasonic dispersion for 1 hour, spin coat the above so...

Embodiment 2

[0036] 1) According to the literature report (Phys.Chem.Chem.Phys., 2013,15,9907), prepare graphene quantum dots by chemical method;

[0037] 2) Add 30 mg of graphene quantum dots, 100 μL of aniline, and 230 mg of ammonium persulfate to 12 mL of aqueous hydrochloric acid at pH=1, stir at 2°C for 24 hours, centrifuge, wash, and dry to obtain graphene quantum dots / polyaniline composite materials;

[0038] 3) Add 15 mg of graphene quantum dots / polyaniline composite material to 100 mL of water containing cetyltrimethylammonium bromide, then add 1.5 mL of gold perchlorate aqueous solution with a concentration of 10 mg / mL, and stir at 2 °C After 2 hours, after centrifugation, washing and drying, the graphene quantum dot / polyaniline / gold nanoparticle composite material was obtained;

[0039] 4) Add 30 mg of graphene quantum dots / polyaniline / gold nanoparticles composite material into 20 mL of polyvinyl alcohol aqueous solution with a concentration of 10 mg / mL, and after ultrasonic di...

Embodiment 3

[0043]1) According to the literature report (Phys.Chem.Chem.Phys., 2013,15,9907), prepare graphene quantum dots by chemical method;

[0044] 2) Add 45 mg of graphene quantum dots, 100 μL of aniline, and 230 mg of ammonium persulfate to 20 mL of aqueous hydrochloric acid at pH 1, stir at 4°C for 48 hours, centrifuge, wash, and dry to obtain a graphene quantum dot / polyaniline composite Material;

[0045] 3) Add 18mg of graphene quantum dots / polyaniline composite material into 100mL of water containing sodium dodecylsulfonate, then add 2mL of gold perchlorate aqueous solution with a concentration of 10mg / mL, stir at 4°C for 2 hours, and centrifuge , After washing and drying, the graphene quantum dot / polyaniline / gold nanoparticle composite material is obtained;

[0046] 4) Add 38 mg of graphene quantum dots / polyaniline / gold nanoparticles composite material into 30 mL of polyvinyl alcohol aqueous solution with a concentration of 10 mg / mL, and after ultrasonic dispersion for 3 hour...

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Abstract

The invention discloses a storage device based on a graphene quantum dot / polyaniline / gold nanoparticle / polyvinyl alcohol composite material and a preparation method thereof. The storage device comprises a lower electrode, an electroactive intermediate layer and an upper electrode, wherein the electroactive intermediate layer is a graphene quantum dot / polyaniline / gold nanoparticle / polyvinyl alcoholcomposite material, and the thickness is 100-150nm. According to the invention, firstly the surfaces of polyaniline coated graphene quantum dots are modified by gold nanoparticles, then a graphene quantum dot / polyaniline / gold nanoparticle composite material is dispersed in polyvinyl alcohol, and the graphene quantum dot / polyaniline / gold nanoparticle / polyvinyl alcohol composite material is obtained by spin coating. In the composite material, polyaniline effectively reduces the aggregation of the graphene quantum dots and gold nanoparticles, the graphene quantum dots and the gold nanoparticlesimprove the carrier transport ability, and polyaniline interacts with a hydrogen bond of polyvinyl alcohol to ensure the uniform dispersion of other components in polyvinyl alcohol, thereby enabling the device to have good storage performance.

Description

technical field [0001] The invention relates to the fields of functional composite materials and electronic storage devices, in particular to a storage device based on graphene quantum dots / polyaniline / gold nanoparticles / polyvinyl alcohol composite materials. Background technique [0002] Storage devices are important components for data storage and information processing in computers, tablet computers, mobile phones, etc. It can read and write programs or data automatically at high speed during operation. In the memory device, the data is expressed in binary with two numbers "0" and "1", and the two stable states of the memory storage element are represented as "0" and "1" respectively. At present, new storage devices use storage materials to exhibit two different resistance states (high resistance and low resistance) under different applied electric fields, corresponding to two binary numbers "0" and "1". The state changes suddenly to another state, and the changed state ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/05H01L51/40B82Y10/00B82Y30/00
CPCB82Y10/00B82Y30/00H10K10/29H10K10/50
Inventor 熊丽君周红穆海梅田景富李亮
Owner WUHAN INSTITUTE OF TECHNOLOGY
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