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A photodetector comprising a graphene sandwich structure

A photodetector and graphene layer technology, applied in the field of photoelectric detection, can solve the problems of weak signal response ability and small gain, etc., and achieve the effects of good response effect, high gain effect, and high gain detection effect.

Active Publication Date: 2020-11-20
CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
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  • Abstract
  • Description
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Problems solved by technology

However, like single-band detectors, dual-band detectors based on materials such as mercury cadmium telluride also face the problems of low gain and weak response to weak signals

Method used

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  • A photodetector comprising a graphene sandwich structure

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Effect test

Embodiment 1

[0036] combined with figure 1 shown. The photodetector comprising the graphene sandwich structure of the present invention includes a first light absorption layer 1, a graphene layer 2, and a second light absorption layer 3 from bottom to top, and the graphene layer 2 is placed in the first light absorption layer. Between the layer 1 and the second light absorbing layer 3, a sandwich structure is formed; the surface of the graphene layer 2 is also provided with a metal electrode (4).

[0037] The material of the first light-absorbing layer 1 is a short-wave absorbing material, which does not absorb long-wave; the graphene layer 2 simultaneously provides a high-gain carrier transport channel for the first light-absorbing layer 1 and the second light-absorbing layer 3 . The material of the first light-absorbing layer 1 is a single crystal silicon sheet; the material of the second light-absorbing layer 3 is a quantum dot material, preferably a PbS sol-type quantum dot material. ...

Embodiment 2

[0040] Fabrication method of photodetector

[0041] 1. Preparation of thinned single crystal silicon. Select monocrystalline silicon to be etched to about 10 μm with KOH solution first, then fix the substrate on a quartz substrate spin-coated with polyimide and perform a drying process at about 300 ° C, and then use KOH solution for secondary etching to remove the single crystal The silicon is thinned to a cut-off wavelength absorption thickness of about 1.1 μm.

[0042] 2. Graphene preparation. The graphene film was prepared by chemical vapor deposition equipment, the growth substrate was flat copper foil, and the raw material was analytical pure ethanol. Under the action of high temperature, carbon atoms in ethanol are deposited on the surface of the substrate to form a graphene film after adsorption and migration on the copper substrate. The number of layers of the finally obtained graphene film is controlled at 1-2 layers.

[0043]3. Graphene transfer. The transfer of...

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Abstract

The invention belongs to the technical field of photoelectric detection, and particularly relates to a double-waveband high-gain photoelectric detector with a graphene sandwich structure. The photoelectric detector with the graphene sandwich structure provided by the invention sequentially comprises a light absorption layer I (1), a graphene layer (2) and a light absorption layer II (3) from bottom to top, wherein the graphene layer (2) is arranged between the light absorption layer I (1) and the light absorption layer II (3) to form the sandwich structure; and a metal electrode (4) is arranged on the surface of the graphene layer (2). By virtue of the sandwich structure with unique graphene in combination with the double-layer light absorption material layers, the photoelectric detector can simultaneously respond to light of different wavebands, and a high response effect is obtained; and in addition, the preparation process of the photoelectric detector is simple, and strong in practicability.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detection, in particular to a dual-band high-gain photoelectric detector including a graphene interlayer structure. Background technique [0002] Photoelectric detection technology is the reproduction and expansion of the human eye. Using photoelectric detectors such as ultraviolet and infrared, it can achieve imaging effects that the human eye cannot achieve in special environments such as night. However, photodetection in a single band has its own limitations. For example, although infrared detection has the advantages of breaking through the limits of the human eye and realizing night vision functions, it also has the disadvantage of not conforming to the visual habits of imaging; although visible light detection has the advantage of matching the imaging habits of the human eye, it cannot detect infrared and night targets. Wait. So the researchers thought that by using image fusion tech...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/101H01L31/11H01L31/18
CPCH01L31/1013H01L31/11H01L31/18Y02P70/50
Inventor 申钧吴启明魏兴战冯双龙周大华汤林龙冷重钱聂长斌张之胜伍俊史浩飞
Owner CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
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