Chromium-doped black silicon material and preparation method thereof
A technology of chromium doping and black silicon, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., and can solve problems such as limiting the application of black silicon, unfavorable high signal-to-noise ratio photoelectric conversion devices, and poor thermal stability
Inactive Publication Date: 2019-10-11
JILIN UNIV
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Problems solved by technology
However, the thermal stability of the black silicon material is poor in the near-infrared region (1.1-2.5 μm). Although the detection of light within the intrinsic absorption limit of silicon (0.4-1.1 μm) has been realized, the wavelength High-efficiency detection of infrared light greater than 1.1 μm is still difficult; and black silicon materials have a relatively high concentration of background free carriers (~10 19 cm -3 ), which is not conducive to the acquisition of photoelectric conversion devices with high signal-to-noise ratio
The above factors limit the application of black silicon in infrared photodetection devices
Method used
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Embodiment 1
[0016] figure 1 It is a process flow diagram of the chromium-doped black silicon material prepared by the method of the present invention.
[0017] The double-sided polished N-type single crystal silicon substrate (resistivity 1500Ω·cm) was ultrasonically cleaned in acetone solution for 10 min; then, ultrasonically cleaned in absolute ethanol solution for 10 min; finally, ultrasonically cleaned in deionized water for 10 min, with Blow dry with nitrogen.
[0018] A high-purity chromium target with a purity of 99.95% and a cleaned single crystal silicon substrate were placed in a growth chamber of a radio frequency magnetron sputtering apparatus, and the distance between the chromium target and the substrate was adjusted to 12 cm. Vacuum the system to 5.0×10 -4 Pa, and then pass high-purity argon gas (a purity of 99.999% or more) with a flow rate of 80 sccm, and adjust the working pressure in the growth chamber to 3 Pa after the gas flow is stabilized. Turn on the switch of t...
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Abstract
The invention discloses a chromium-doped black silicon material and a preparation method thereof and belongs to the technical field of semiconductor photoelectric materials. The chromium-doped black silicon material is prepared through depositing a chromium film on a single crystal silicon substrate by adopting a radio-frequency magnetron sputtering technology, taking chromium metal as a dopant and irradiating a chromium-plated single crystal silicon surface by adopting a femtosecond laser pulse. The concentration of the chromium-doped black silicon material prepared through the method is 1020-1021cm<-3> and the carrier concentration is lower than 1017cm<-3>; the black silicon material has an absorption enhancement characteristic from an ultraviolet band to a near-infrared band (0.25-2.2[mu]m); the absorptivity in an infrared region has good thermal stability; and the black silicon material prepared through the method can be applied to the field of infrared photoelectric detection.
Description
technical field [0001] The invention belongs to the technical field of semiconductor photoelectric materials, and in particular relates to a chromium-doped black silicon material and a preparation method thereof. Background technique [0002] Semiconductor silicon materials are widely used in today's microelectronics field and integrated circuit industry because of their advantages such as wide source, low cost, easy purification, easy doping, and easy integration. However, due to its indirect bandgap band structure and 1.12eV forbidden band width, the photoelectric conversion efficiency of optoelectronic devices made of single crystal silicon is low, and it is difficult to realize the absorption and detection of infrared light with a wavelength greater than 1.1 μm. Therefore, single crystal silicon The application in the field of infrared photodetection is limited. [0003] In 2001, the research group of Professor Mazur of Harvard University used a femtosecond laser to irr...
Claims
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IPC IPC(8): H01L21/225H01L21/268H01L31/0288
CPCH01L21/2252H01L21/268H01L31/0288
Inventor 赵纪红李超陈占国陈岐岱李贤斌孙洪波
Owner JILIN UNIV