Photoelectric material with CuO nanoparticle modified ZnO nanowire array, preparation and application
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- NORTHWEST UNIV(CN)
- Publication Date
- 2019-10-18
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Abstract
Description
technical field
[0001] The invention belongs to the technical field of nanometer materials, and in particular relates to a photoelectric material, preparation and application of a CuO nanoparticle-modified ZnO nanowire array. Background technique
[0002] ZnO is an environmentally friendly n-type semiconductor, and compared with other metal oxides with wider band gaps, it has better electron migration performance, stable photocorrosion and good photoelectrochemical properties, and is considered to be The most attractive photoelectricity has a wide range of applications in solar energy storage and utilization, and photoelectric conversion. Transition metal oxides have gradually become a research hotspot for researchers due to their large storage capacity, low cost of use, and their properties in many fields. Among them, copper oxide (CuO, Eg=1.2-1.8eV) is a typical narrow-bandgap p-type semiconductor, which can be obtained in large quantities on the earth and is a well-known...