Photoelectric material with CuO nanoparticle modified ZnO nanowire array, preparation and application

A nanowire array and nanoparticle technology, applied in the field of nanomaterials, can solve the problems of low light absorption and utilization, and achieve the effects of increasing carrier concentration, high yield, and increasing lifespan

Active Publication Date: 2019-10-18
NORTHWEST UNIV(CN)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Aiming at the defects and deficiencies of the prior art, the object of the present invention is to provide a photoelectric material, preparation and application of C...

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  • Photoelectric material with CuO nanoparticle modified ZnO nanowire array, preparation and application
  • Photoelectric material with CuO nanoparticle modified ZnO nanowire array, preparation and application
  • Photoelectric material with CuO nanoparticle modified ZnO nanowire array, preparation and application

Examples

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Embodiment 1

[0045] Step 1: Preparation of ZnO seed layer:

[0046] Weigh 3.8413g, 0.35mol / L of Zn(CH 3 COOH) 2 2H 2 Pour O into a beaker, then pour 50mL of ethanol, stir at room temperature for 30min, measure 1.2mL of ethanolamine and slowly add it into the solution, continue to stir for about 30min or more to form a transparent and uniform solution, and put the resulting solution in an oven at 75°C After sinking for 5 hours, a transparent and uniform sol was obtained. Afterwards, the ITO substrate was spin-coated at a gradual speed of 800 rpm, 2000 rpm, and 3500 rpm in turn. The spin-coating time was about 5 seconds at each rpm, and repeated 4 times. All heat treatment was carried out by placing the ITO substrate in an oven at 80°C for 5h. After the spin coating, the ITO substrate was annealed in a muffle furnace, the temperature was raised to 400° C., and the temperature was kept for 90 minutes to prepare the ZnO seed layer.

[0047] Step 2: Preparation of ZnO nanowire arrays:

[...

Embodiment 2

[0055] The difference between this embodiment and embodiment 1 is that in the step 1, the annealing temperature of the ITO substrate in the muffle furnace is 350°C.

[0056] The morphology and properties of the photoelectric composite material prepared in this example are the same as those in Example 1.

Embodiment 3

[0058] The difference between this embodiment and embodiment 1 is that the annealing temperature of the ITO substrate on which the ZnO nanowire array is grown in the step 3 in the muffle furnace is 300° C.

[0059] The morphology and properties of the photoelectric composite material prepared in this example are the same as those in Example 1.

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Abstract

The invention discloses a photoelectric material with a CuO nanoparticle modified ZnO nanowire array, preparation and an application. Firstly, a ZnO seed layer film is prepared by adopting a sol-gel method; a ZnO nanowire array is grown on the ZnO seed layer film by adopting a hydrothermal method; and then CuO nanoparticles are adhered on ZnO nanowires by adopting the sol-gel method to obtain theZnO nanowires with the CuO nanoparticles uniformly dispersed on the surfaces. From a microstructure, the composite material has a large specific surface area; the composite material has a large numberof heterojunctions, photon-generated carrier recombination is reduced, and electron-hole pairs are effectively separated, so that the service life and the concentration of carriers are prolonged andincreased; and from physical property fusion, the composite material not only has the light absorption capability of the ZnO nanowires, but also has the light absorption capability of the CuO nanoparticles, is an excellent photoelectric material and has a great prospect in an application to a photoelectric device.

Description

technical field [0001] The invention belongs to the technical field of nanometer materials, and in particular relates to a photoelectric material, preparation and application of a CuO nanoparticle-modified ZnO nanowire array. Background technique [0002] ZnO is an environmentally friendly n-type semiconductor, and compared with other metal oxides with wider band gaps, it has better electron migration performance, stable photocorrosion and good photoelectrochemical properties, and is considered to be The most attractive photoelectricity has a wide range of applications in solar energy storage and utilization, and photoelectric conversion. Transition metal oxides have gradually become a research hotspot for researchers due to their large storage capacity, low cost of use, and their properties in many fields. Among them, copper oxide (CuO, Eg=1.2-1.8eV) is a typical narrow-bandgap p-type semiconductor, which can be obtained in large quantities on the earth and is a well-known...

Claims

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Application Information

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IPC IPC(8): H01L31/109H01L31/0352H01L31/0336H01L31/18B82Y40/00B82Y20/00
CPCH01L31/0336H01L31/109H01L31/18H01L31/035281B82Y40/00B82Y20/00Y02P70/50
Inventor 吕媛媛张志勇翟春雪闫军峰赵武赵丽丽
Owner NORTHWEST UNIV(CN)
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