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A kind of high-brightness pss composite substrate and manufacturing method thereof

A composite substrate and manufacturing method technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., to achieve the effects of avoiding easy oxidation, improving brightness, and increasing reflection efficiency

Active Publication Date: 2020-06-02
黄山博蓝特半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] With the high requirements of the consumer market, the current traditional micro-nano patterned sapphire substrate is difficult to meet the requirements, so we must start from the material and structure, and adopt a new sapphire substrate preparation method to meet people's requirements

Method used

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  • A kind of high-brightness pss composite substrate and manufacturing method thereof
  • A kind of high-brightness pss composite substrate and manufacturing method thereof
  • A kind of high-brightness pss composite substrate and manufacturing method thereof

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Embodiment 1

[0035] Embodiment 1: a kind of high brightness PSS composite substrate, such as Figure 7 As shown, it includes a double-sided polished sapphire flat plate 1, a group of metal particles 2 spaced apart from each other on the upper surface of the sapphire flat plate 1 form a metallization pattern, and the metal particles 3 are covered with a layer of SiO 2 6. The material of the metal particles is one of Au, Ag, Ni, Co, Fe, Cu, Pt, Pd, Al or a mixture of several metals. The height of the metal particles 3 is 5-2000nm, and the SiO on the metal particles 2 2 6 has a thickness of 0.5 to 2.0 μm. The invention can greatly improve the brightness of the LED chip prepared by the PSS composite substrate by setting the metallization pattern on the double-sided polished sapphire flat sheet. At the same time, in order to prevent the oxidation of the metallization pattern after exposure, a layer of SiO 2 6. SiO2 2 6 That is, it can prevent the oxidation of metal particles, and at the...

Embodiment 2

[0036] Embodiment 2: a kind of manufacture method of high-brightness PSS composite substrate, technological process is as follows figure 1 Shown, concrete preparation method comprises the following steps:

[0037] (1) Firstly, a sapphire flat plate 1 with a flat surface is provided, the flat plate is polished on both sides, and the back side is transparent, that is, a double-sided polished sapphire flat plate. Sapphire flat sheet 1 is scrubbed with acetone for 5 to 10 minutes, and then heated in concentrated H at 90°C. 2 SO 4 with H 2 o 2 Wash in a mixed solution with a volume ratio of 3:1 or 5:2 for 10 to 15 minutes, then wash with 80°C deionized water for 8 to 10 minutes, and finally wash with 25°C deionized water for 5 to 10 minutes, then high-speed Shake dry for 3-10 minutes.

[0038] (2) Place the cleaned sapphire flat sheet 1 in the cavity of the electron gun evaporation machine, use accelerated electrons to bombard the metal material used for coating, and convert t...

Embodiment 3

[0043] Embodiment 3: a kind of preparation method of high-brightness PSS composite substrate, technological process is as follows Figure 8 Shown, concrete preparation method comprises the following steps:

[0044] (1) First select a sapphire flat plate 1 with a flat surface and polished on both sides, scrub it with acetone for 5 to 10 minutes, and then wash it in concentrated H at 90°C. 2 SO 4 with H 2 o 2 Wash in a mixed solution with a volume ratio of 3:1 or 5:2 for 10 to 15 minutes, then wash with 80°C deionized water for 8 to 10 minutes, and finally wash with 25°C deionized water for 5 to 10 minutes, then high-speed Shake dry for 3-10 minutes.

[0045] (2) Place the cleaned sapphire flat sheet 1 in the cavity of the electron gun evaporation machine, use accelerated electrons to bombard the metal material used for coating, and convert the kinetic energy of the electrons into heat energy to heat the metal material to 2000-6000 ° C to evaporate it, and then plated on th...

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Abstract

The invention discloses a high-brightness PSS composite substrate and a manufacturing method thereof. The high-brightness PSS composite substrate comprises a double-side-polished sapphire flat plate,and a group of spaced metal particles arranged on the upper surface of the sapphire flat plate, wherein the metal particles are covered with a layer of SiO2. The manufacturing method of the high-brightness PSS composite substrate comprises metal evaporation, formation of the metal particles and deposition of silicon dioxide on the metal particles and the like, so that the high-brightness PSS composite substrate can be obtained. The obtained PSS composite substrate greatly reduces refraction of light and increases reflection efficiency of light, thereby greatly improving LED chip brightness ofthe sapphire substrate; and the method can be widely used in the manufacturing and processing field of the sapphire substrate.

Description

technical field [0001] The invention relates to the field of LED substrate manufacturing, in particular to a high-brightness PSS composite substrate and a manufacturing method thereof. Background technique [0002] As we all know, PSS (patterned sapphire substrate) is in the upstream process of LED display industry and plays a vital role. It can effectively reduce the dislocation density of GaN epitaxial materials, thereby reducing the non-radiative recombination of the active region and reducing the Reverse leakage current, improve LED life and many other advantages. At present, the micro-nano patterned sapphire substrate technology is widely used. By making periodic conical patterns on the surface of the epitaxial sapphire substrate, the characteristics of the high potential energy of the conical inclined surface on the sapphire patterned substrate are used to control the growth of epitaxial growth parameters. Higher quality GaN is produced. However, with the rapid devel...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/22H01L33/44
CPCH01L33/005H01L33/22H01L33/44
Inventor 史伟言李昌勋徐良刘建哲夏建白彭艳亮祝小林
Owner 黄山博蓝特半导体科技有限公司
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