Method for preparing functional film layer on inner wall of channel of microchannel plate with ultra-large length-diameter ratio

A technology of micro-channel plate and aspect ratio, which is applied in the direction of coating, metal material coating process, gaseous chemical plating, etc., and can solve the problems of reduced gain performance, limited improvement range, and failure to meet the use requirements.

Active Publication Date: 2019-11-19
北方夜视科技(南京)研究院有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Improvements such as enlarging the opening area ratio, optimizing the glass material formula, and appropriately increasing the aspect ratio have certain effects on improving the dynamic range of the microchannel plate when it is used in the field of transient imaging, but the large aspect ratio will lead to a significant dec

Method used

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  • Method for preparing functional film layer on inner wall of channel of microchannel plate with ultra-large length-diameter ratio
  • Method for preparing functional film layer on inner wall of channel of microchannel plate with ultra-large length-diameter ratio
  • Method for preparing functional film layer on inner wall of channel of microchannel plate with ultra-large length-diameter ratio

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Experimental program
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Effect test

Embodiment 1

[0054] A method for preparing a functional film layer on the channel inner wall of a super-large aspect ratio microchannel plate, comprising the following steps:

[0055] (1) Put the cleaned micro-channel plate into the fixture and place it in the reaction chamber of the deposition equipment. After vacuuming and purging with nitrogen, heat it up to 150-300°C, and then keep it warm for a certain period of time; in fact, the reaction described above The cavity includes a cavity for placing a microchannel plate. The upper and lower sides of the cavity are respectively equipped with corresponding upper and lower gas uniformity plates, and the left and right sides are respectively equipped with inert gas inlet pipelines and exhaust pipelines. Dense holes are distributed on the plate and the lower gas uniform plate so that the precursor reactants enter the cavity to form two gas curtains, and reach the surface of the microchannel plate at different positions at the same time;

[005...

Embodiment 2

[0071] ALD-MCP with an aspect ratio of 80 to produce aluminum oxide single film deposition process

[0072] (1) Pack the clean microchannel plate after cleaning into a special fixture, place it in the reaction chamber of the deposition equipment, evacuate, set the nitrogen purge flow rate to 300 sccm, and purge through the inlet pipeline 25 and the exhaust pipeline 26, Then heat up to 200°C and keep warm for 2h;

[0073] (2) Enter the TMA precursor: close the pumping valves (16, 17), close the nitrogen purge flow at the same time, open the TMA source pulse valve (8) and last for 2s, the precursor enters the reaction evenly through the upper and lower two gas distribution plates chamber, seal the precursor in the reaction chamber, close the TMA source pulse valve (8), wait for 10s, open the pumping valves (16, 17), open the purge nitrogen flow, and pass through the intake line 25 and the pumping line 26 For purging, the flow rate is set to 1000sccm, and the purging time is 40s...

Embodiment 3

[0077] Deposition process of titanium dioxide + magnesium oxide composite film layer produced by ALD-MCP with an aspect ratio of 500

[0078] (1) Pack the clean microchannel plate after cleaning into a special fixture, place it in the reaction chamber of the deposition equipment, evacuate, set the nitrogen purge flow rate to 300 sccm, and purge through the inlet pipeline 25 and the exhaust pipeline 26, Then heat up to 200°C and keep warm for 2h;

[0079] (2) Enter the titanium tetrachloride precursor: close the pumping valves (16, 17), close the nitrogen purge flow at the same time, open the titanium tetrachloride source pulse valve (11) and continue for 20s, the precursor passes through the upper and lower two uniform The gas plate enters the reaction chamber evenly, seals the precursor in the reaction chamber, closes the pulse valve (11) of the titanium tetrachloride source, waits for 1 min, opens the pumping valves (16, 17), opens the flow rate of purge nitrogen, and passes...

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Abstract

The invention provides a method for preparing a functional film layer on the inner wall of a channel of a microchannel plate with ultra-large length-diameter ratio. The method is characterized in thata novel designed reaction cavity for deposition is provided, a sufficient diffusion process is combined, the charge storage capacity of the microchannel plate is improved while the single functionalfilm layer or the composite functional film layer with high secondary electron emission yield, high dielectric constant and uniform thickness is deposited on the inner wall of a substrate of the microchannel plate with the ultra-large length-diameter ratio to improve the gain performance of the microchannel plate, and thereby improving the dynamic range of the microchannel plate in the applicationof a transient electron imaging and detection system.

Description

technical field [0001] The invention relates to the technical field of microchannel plates, in particular to a method for preparing a functional film layer on the inner wall of an MCP channel with a super large aspect ratio. Background technique [0002] Microchannel Plate (MCP) is composed of many (10 4 ~10 7 ) two-channel electron multiplier (Channeltron electron multiplier, CEM) is a compact two-dimensional array, which has the advantages of small size, light weight, high gain, low noise, good uniformity, high spatial resolution, and fast time response. Widely used in night vision technology, space technology, optical instruments, optoelectronics instruments, radiation detection instruments and other fields, it is a very important two-dimensional electron multiplier device. [0003] Atomic layer deposition is a special chemical vapor deposition method. The deposition film is formed by alternately injecting pulses of gaseous precursors into the reaction chamber and chemi...

Claims

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Application Information

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IPC IPC(8): C23C16/455H01J43/10
CPCC23C16/45502C23C16/45525H01J43/10
Inventor 孙建宁邱祥彪曹柱荣张正君丛晓庆毛汉祺李婧雯乔芳建高鹏牛鹏杰张欢
Owner 北方夜视科技(南京)研究院有限公司
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