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Solution-Based Growth Method of Cesium Iodide Single Crystal Flakes

A technology of cesium iodide and flakes, which is applied in the field of crystal material manufacturing, can solve the problems of unsatisfactory light transmittance and light extraction efficiency of cesium iodide single crystals, complex preparation methods, and difficulty in mass production, and achieve excellent light output efficiency and light transmission efficiency. The effect of excellent precision and controllable size

Active Publication Date: 2022-04-01
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the existing CsI(Tl) crystal preparation method is complex, difficult to control, and difficult to mass-produce, and cannot meet the needs of various application fields in the future. The light transmittance and light extraction efficiency of the prepared cesium iodide single crystal are not ideal. Technical issues resolved

Method used

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  • Solution-Based Growth Method of Cesium Iodide Single Crystal Flakes
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  • Solution-Based Growth Method of Cesium Iodide Single Crystal Flakes

Examples

Experimental program
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Effect test

Embodiment 1

[0027] In this example, participating in Figure 1 ~ Figure 3 , a method for growing a cesium iodide single crystal sheet based on a solution, comprising the steps of:

[0028] a. With dimethyl sulfoxide as solvent, 20ml of dimethyl sulfoxide is added into a flat-bottomed flask, then 10.4g of cesium iodide crystal powder with a purity of 99.9% is added, and the flat-bottomed flask is stirred on a magnetic stirrer, Control the rotation speed to 500r / min, and stir for 12 hours to completely dissolve the cesium iodide crystal powder in dimethyl sulfoxide until saturated and until the solution is clear and transparent; after the cesium iodide crystal powder is fully dissolved, use a The filter tip of micron is filtered, obtains the cesium iodide solution of the long crystal of saturation, for subsequent use;

[0029] b. the saturated crystal-growing cesium iodide solution prepared in the step a is taken out in two parts, and 0.6ml is taken out into a radius of 2cm brown vial A an...

Embodiment 2

[0035] This embodiment is basically the same as Embodiment 1, especially in that:

[0036] In this embodiment, a method for growing a cesium iodide single crystal sheet based on a solution comprises the following steps:

[0037] a. With dimethyl sulfoxide as solvent, 60ml of dimethyl sulfoxide is added into a flat-bottomed flask, then 31.2g of cesium iodide crystal powder with a purity of 99.9% is added, and the flat-bottomed flask is placed on a magnetic stirrer to stir, Control the rotation speed to 700r / min, and stir for 4 hours to completely dissolve the cesium iodide crystal powder in dimethyl sulfoxide until saturated and until the solution is clear and transparent; after the cesium iodide crystal powder is fully dissolved, use a The filter tip of micron is filtered, obtains the cesium iodide solution of the long crystal of saturation, for subsequent use;

[0038] b. the saturated crystal-growing cesium iodide solution prepared in the step a is taken out in two parts, a...

Embodiment 3

[0043] This embodiment is basically the same as the previous embodiment, and the special features are:

[0044] In this embodiment, a method for growing a cesium iodide single crystal sheet based on a solution comprises the following steps:

[0045] a. With dimethyl sulfoxide as solvent, 20ml of dimethyl sulfoxide is added into a flat-bottomed flask, then 10.4g of cesium iodide crystal powder with a purity of 99.9% is added, and the flat-bottomed flask is stirred on a magnetic stirrer, Control the rotation speed to 300r / min, and stir for 4 hours to completely dissolve the cesium iodide crystal powder in dimethyl sulfoxide until saturated and until the solution is clear and transparent; after the cesium iodide crystal powder is fully dissolved, use a The filter tip of micron is filtered, obtains the cesium iodide solution of the long crystal of saturation, for subsequent use;

[0046] b. the saturated crystal-growing cesium iodide solution prepared in the step a is taken out i...

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Abstract

The invention discloses a solution-based method for growing cesium iodide single crystal flakes. The solubility of cesium iodide in dimethyl sulfoxide (DMSO) tends to decrease as the temperature rises. Heating the cesium solution can obtain the seed crystal, and then put the seed crystal into a special glass device to grow to obtain a cesium iodide single crystal flake with better quality. The invention has the advantages of convenient operation, low raw material cost, and high-quality cesium iodide single-crystal flakes can be precipitated from the cesium iodide solution. The invention adopts the combination of the solution precipitation method and the mold constraint control method, and can prepare the cesium iodide single crystal flake with controllable size, excellent light transmittance and light extraction efficiency. The cesium iodide single crystal flake grown by the present invention has high quality, high transparency and unique photoluminescent performance. The single crystal flake prepared by the preparation method can be matched with a silicon-based photodiode to produce a flat-panel X-ray detector with excellent performance. device.

Description

technical field [0001] The invention relates to a method for preparing an inorganic halide single crystal material, in particular to a method for preparing a cesium iodide single crystal material, and also relates to a method for controlling the size of a cesium iodide single crystal material, and applies to the technical field of crystal material manufacturing. Background technique [0002] Inorganic halides, including CsI(Tl), are widely used as scintillation media in energetic particle and ionizing radiation detectors. For the first time, vacuum-deposited CsI(Tl) films were used for x-ray imaging inside photoelectric converters. Over the past decade, digital X-ray imaging systems have been developed using vacuum-deposited CsI(Tl) layers coupled to CCD or amorphous silicon detector arrays. CsI(Tl) scintillator thin films are widely used in advanced digital X-ray imaging because of their high scintillation efficiency for X-ray radiation, high spatial resolution and good ma...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/12C30B29/64C30B7/00
CPCC30B29/12C30B29/64C30B7/00
Inventor 徐闰朱荣云刘风采倪超伟张笑铮蔡江孟华王文贞徐飞洪峰
Owner SHANGHAI UNIV
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