Preparation method of semiconductor film field effect transistor made of unstable two-dimensional material

Abstract

The invention relates to a preparation method of a semiconductor film field effect transistor made of an unstable two-dimensional material. The semiconductor film field effect transistor sequentiallycomprises a silicon wafer substrate, the unstable two-dimensional material, a hafnium oxide film, an aluminum oxide film, a source electrode and a drain electrode from bottom to top. The method is advantaged in that the hafnium oxide film is deposited on the unstable two-dimensional material, the aluminum oxide film is deposited on the hafnium oxide film, the aluminum oxide film plays a role in coating a semiconductor material and isolating the air from process solvent in the later micro-nano machining process, after the device is prepared, the aluminum oxide film on a channel of the device isutilized as a buffer layer to further protect properties of the material, so the performance of the device can be stable for a long time, and the aluminum oxide film is high in quality, large in forbidden band width, large in light transmission spectrum range and suitable for manufacturing of photoelectric devices.

Description

technical field [0001] The invention relates to a preparation method of a semiconductor thin film field effect transistor of an unstable two-dimensional material, and belongs to the technical field of semiconductor technology. Background technique [0002] Since the discovery of graphene, the research on two-dimensional layered materials has set off a wave of upsurge. So far, a large number of high-quality two-dimensional layered semiconductor materials have been developed and studied, mainly including three types: transition metal sulfides, black phosphorus, and III-VI selenides. [0003] Among many two-dimensional materials, black phosphorus and indium selenide with high theoretical mobility have the disadvantage of unstable properties in air and solvent environments. Due to the lone pair of electrons on the phosphorus atom of the fifth main group, black phosphorus will rapidly degrade when it encounters water or oxygen to form phosphoric acid. The high mobility of two-d...

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Problems solved by technology

However, the disadvantage of the mechanical exfoliation method is that the thickness of the nanosheets obtained by the exfoliation and its distribution on the substrate are very random, the position cannot be controlled, and the output of the device is small.

However, this method has many disadvantages corresponding to the mechanical exfoliation method: the two-dimensional material film transferred by the mechanical exfoliation method is random, and the thickness, size, and position cannot be precisely controlled

However, these methods have different disadvantages: (1) PMMA is not compatible with the photolithography process and will dissolve when encountering organic solvents

Due to the need for positive sample spin-coating, the contact between the electrode and the probe will also be affected during the test

(2) Using BN sheets to cover, the process is difficult, the alignment is difficult, and the success rate is low. It is usually completed in the glove box, and the efficiency is relatively low.

(3) Oxidize the surface of InSe to make the surface of InSe into InO x , the oxidation process has low controllability and cannot be applied to thin-layer InSe materials

(4) The method of evaporating In has low controllability, and the effective channel length of the device will be reduced which is difficult to measure, which will cause errors in the extraction of intrinsic parameters of the device and material

It is also not suitable for the production of optoelectronic devices

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