Ultraviolet/infrared double-color detector based on boron nitride

Abstract

An ultraviolet / infrared double-color detector based on boron nitride belongs to the technical field of semiconductor photoelectric detectors. The problems as follows are solved: an ultraviolet / infrared double-color detector in the prior art cannot achieve efficient ultraviolet and infrared detection and is limited by low temperature in application, the raw materials are toxic, preparation is tedious, and a large number of pollutants are inevitably introduced in preparation. The double-color detector is composed of a substrate, an ultraviolet detector epitaxial layer and an infrared detector epitaxial layer. The ultraviolet detector epitaxial layer is of a continuous layer structure, is fixed to the upper surface of the substrate and is made of three-dimensional boron nitride. The infrareddetector epitaxial layer is of a continuous layer structure or a patterned structure, is fixed to the upper surface of the ultraviolet detector epitaxial layer, and is made of two-dimensional boron nitride. The double-color detector realizes simultaneous detection of ultraviolet light and infrared light by utilizing the intrinsic ultraviolet absorption performance of the three-dimensional boron nitride and the phonon polarization infrared absorption performance of the two-dimensional boron nitride. The detector is not limited by low temperature in use, and is safe, environment-friendly and easy to prepare.

Description

technical field [0001] The invention belongs to the technical field of semiconductor photodetectors, in particular to a boron nitride-based ultraviolet / infrared dual-color detector. Background technique [0002] Ultraviolet detectors and infrared detectors are two common detectors that are widely used in military and civilian applications. The ultraviolet / infrared dual-color detectors that integrate the detection of the two bands can suppress background noise and reduce the false alarm rate. One of the research hotspots of technological development. However, the development of ultraviolet / infrared dual-color detectors is still in its infancy, and the material of the dual-color detectors is one of the problems to be solved urgently. [0003] In the existing technology, with the improvement of the quality of wide-bandgap semiconductor materials, the preparation process of high-quality multi-quantum well device structures has gradually matured, and the GaN / AlGaN quantum well s...

AI Technical Summary

Problems solved by technology

However, this in-band transition from the GaN valence band to the AlGaN valence band can only be realized at low temperatures, so the GaN / AlGaN quantum well system UV / IR dual-color detector has a good UV response, but the infrared response is not good. Not suitable for large-scale application

In order to improve the infrared detection performance of the GaN / AlGaN quantum well system, the researchers introduced a narrow bandgap semiconductor material suitable for infrared detection combined with a wide bandgap semiconductor suitable for ultraviolet detection to achieve effective two-color detection, MCT (mercurycadmium tellurium) / GaN system and PbS / ZnO system have appeared one after another, but these materials still have the disadvantages of infrared response requiring low-temperature cooling, raw materials are highly toxic, etc.

In addition, the researchers combined the ultraviolet detection performance of Pt / CdS and the infrared detection performance of InSb to achieve ultraviolet / infrared dual-color response, but the ultraviolet detection of Pt / CdS is not in the solar blind ultraviolet band, which limits its application.

Harbin University of Science and Technology combined the solar-blind ultraviolet detection performance of AlGaN and the infrared detection performance of graphene to realize the ultraviolet / infrared dual-color detector, but the preparation of graphene in this system needs to go through a relatively complicated transfer process, which inevitably introduces A large amount of contamination, which causes low detector performance and is difficult to improve

[0004] In summary, in the prior art, there has not been a material that can achieve simultaneous detection of ultraviolet and infrared, is not limited by low temperature, is safe and environmentally friendly, and is easy to prepare. Therefore, exploring new materials is still the field of ultraviolet / infrared dual-color detectors. Bottleneck problems faced in development

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