CVD equipment used for manufacturing HIT solar cell, set CVD equipment and coating method

Abstract

The invention provides CVD equipment used for manufacturing an HIT solar cell, the set CVD equipment and a coating method. The CVD equipment comprises a loading cavity, multiple CVD process cavities,an unloading cavity and a transmission cavity. The loading cavity is configured to be capable of receiving trays which come from a loading position and are loaded with silicon slices, the CVD processcavities are configured to receive the trays loaded with the silicon slices, and I / N-type or I / P-type amorphous silicon films are deposited on one sides of the silicon slices in sequence respectivelythrough intrinsic and doping CVD processes; the unloading cavities are configured to receive the trays loaded with the silicon slices which are subjected to intrinsic and doping CVD processes and convey the trays to an unloading position, so that the silicon slices are unloaded from the trays; the transmission cavity is connected with the loading cavity, the CVD process cavities and the unloadingcavity, and configured to receive the trays which come from the loading cavity or any of the CVD process cavities and are loaded with the silicon sheets, and correspondingly convey the trays to any available CVD process cavity or unloading cavity. By means of the CVD equipment, the I / N-type or I / P-type amorphous silicon films can be deposited in the same cavity, the integration level of the equipment can be effectively improved, the automation difficulty is lowered, the occupied space is reduced, and the capacity of the equipment is increased.

Description

technical field [0001] The invention relates to the field of solar cell manufacturing, in particular to CVD equipment, a complete set of CVD equipment and a coating method for manufacturing heterojunction solar cells. Background technique [0002] Thin film / crystalline silicon heterojunction solar cells (hereinafter referred to as heterojunction solar cells, also known as HIT or HJT or SHJ solar cells) belong to the third generation of high-efficiency solar cell technology, which combines the first generation of crystalline silicon and the second generation The advantage of silicon thin film is that it has the characteristics of high conversion efficiency and low temperature coefficient. In particular, the conversion efficiency of double-sided heterojunction solar cells can reach more than 26%, which has broad market prospects. [0003] The core process of producing HIT solar cells is double-sided I-type amorphous silicon film passivation and N, P doping technology, which is...

AI Technical Summary

Problems solved by technology

[0004] Existing equipment that can be used for mass production of HIT solar cells is equipped with a film-forming process chamber for each of the 4 layers of double-sided I, N, and P amorphous silicon films, and the corresponding four CVD process chambers are usually along a straight line Or U-shaped arrangement, resulting in low equipment integration, complex automation, high cost, large footprint, relatively low production capacity, and low cost performance

In addition, the existing PECVD equipment needs to heat the corresponding silicon wafer to the range of 100-300°C before starting the PECVD coating process, and then the PECVD coating process can be performed. In the prior art, the silicon wafer entering the PECVD chamber is usually at room temperature. If the silicon wafer is preheated in the PECVD process chamber, it will inevitably prolong the time of the silicon wafer in the process chamber, which will reduce the productivity of the PECVD equipment and make the PECVD process chamber the bottleneck of the entire equipment.

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