Method and system for measuring depth of indium antimonide PN junction

Abstract

The invention provides a method and a system for measuring the depth of an indium antimonide PN junction, in order to simplify the indium antimonide PN junction depth measurement process and reduce the measurement cost. The method for measuring the depth of an indium antimonide PN junction comprises the following steps: immersing an indium antimonide material with a PN junction structure formed into a corrosive agent for corrosion to form a corrosion slope; putting the corroded indium antimonide material into de-ionized water for cleaning and drying the corroded indium antimonide material; putting the dried indium antimonide material in an anodic oxidation device for anodic oxidation until the surface of the corrosion slope has different colors and two color areas are formed; putting the oxidized indium antimonide material into de-ionized water for cleaning and drying the oxidized indium antimonide material; measuring a first width of the corrosion slope and a second width of the colorareas at the top of the corrosion slope according to the boundary of the surface color of the corrosion slope; measuring the height of the corrosion slope by using a step instrument; and determiningthe depth of the PN junction according to the first width, the second width and the height of the corrosion slope.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method and a system for measuring the depth of a PN junction of an indium antimonide material. Background technique [0002] Indium antimonide material is the mainstream material for the preparation of mid-wave infrared detectors. After diffusion, ion implantation or epitaxy, a PN junction structure is formed, and a detector chip is prepared after post-passivation, electrodes, flip-chip interconnection and other processes. It can be used in various fields of sea, land and air to realize night vision, tracking and other functions. In the process of infrared detector technology, the quality of PN junction preparation is the core that determines the final performance index of the detector. The junction depth of the PN junction directly affects the main performance indicators of the detector, such as quantum efficiency, detection rate, and responsivity. [0003] At present,...

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Problems solved by technology

However, the first scheme uses a secondary ion mass spectrometer for testing. Due to the expensive equipment, only a few research institutes in China have purchased this equipment, so the PN junction measurement has the problems of high price, long cycle, and inconvenient; while the second scheme In the plan, the method of grinding and oxidation is used for testing, which involves the grinding and polishing thinning process of the device. The process is complicated to realize, and the design of multiple process operations and the use of various chemical reagents require a long process time.

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