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Quantum dot light emitting diode and preparation method thereof

A quantum dot light-emitting and diode technology, which is applied in light-emitting materials, chemical instruments and methods, nano-optics, etc., can solve the problems of device luminescence quenching and reduce device luminescence performance, achieve simple process, avoid luminescence quenching phenomenon, improve The effect of luminous properties

Active Publication Date: 2020-01-31
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to overcome the above-mentioned deficiencies of the prior art, provide a quantum dot light-emitting diode and its preparation method, aiming to solve the problem that there are a large number of defects on the surface of the electron transport material in the existing quantum dot light-emitting diode, so as to cause the device to emit light Quenching and reducing the technical problems of device luminescence performance

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  • Quantum dot light emitting diode and preparation method thereof

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preparation example Construction

[0026] Another aspect of the present invention provides a method for preparing a quantum dot light-emitting diode, comprising the following steps:

[0027] A composite electron transport layer is prepared on the cathode or quantum dot luminescent layer, and the composite electron transport layer contains electron transport materials and ultraviolet absorbing materials.

[0028] A composite electron transport layer is arranged between the cathode in the quantum dot light-emitting diode provided in the embodiment of the present invention and the quantum dot light-emitting layer, and the composite electron transport layer contains an electron transport material and an ultraviolet absorbing material, and the ultraviolet absorbing material can passivate The surface defects of the electron transport material can avoid the luminescence quenching phenomenon of the quantum dot light-emitting diode, thereby improving the luminescence performance of the device.

[0029] Further, the step...

Embodiment 1

[0094] A quantum dot light-emitting diode, the preparation process of which is as follows:

[0095] Firstly, the sinapinyl malic acid is dissolved in methanol at a concentration of 0.2 mmol / L to obtain a sinapinyl malic acid solution, and then the following process steps are carried out.

[0096] A. Spin-coat a PEDOT:PSS layer on the ITO conductive glass;

[0097] B. Spin-coat a layer of TFB on the PEDOT:PSS layer;

[0098] C. Spin-coat a layer of CdSe / ZnS quantum dot luminescent layer on the TFB layer;

[0099] D. Deposit the sinapinyl malic acid solution prepared above on the CdSe / ZnS quantum dot light-emitting layer by spin coating, wherein the spin coating condition is 3000rpm. After the spin coating is completed, heat and anneal the film at 80°C for 30min to obtain sinapinyl Malic acid layer;

[0100] E. Spin-coat one layer of ZnO electron transport layer on the sinapinyl malic acid layer;

[0101] F. Evaporating a layer of Al cathode layer on the ZnO electron transpo...

Embodiment 2

[0103] A quantum dot light-emitting diode, the preparation process of which is as follows:

[0104] Firstly, serapinyl malic acid is dissolved in ethanol at a concentration of 0.5 mmol / L to obtain a serapinyl malic acid solution, and then the following process steps are carried out.

[0105] A. Spin-coat a PEDOT:PSS layer on the ITO conductive glass;

[0106] B. Spin-coat a layer of TFB on the PEDOT:PSS layer;

[0107] C. Spin-coat a layer of CdSe / ZnS quantum dot luminescent layer on the TFB layer;

[0108] D. Spin-coat a ZnO electron transport layer on the CdSe / ZnS quantum dot light-emitting layer;

[0109] E. Deposit the sinapylmalic acid solution prepared above on the ZnO electron transport layer by spin coating, wherein the spin coating condition is 3000rpm. After the spin coating is completed, heat and anneal the film at 80°C for 30min to obtain the sinapinyl malic acid layer ;

[0110] F. Evaporating a layer of Al cathode layer on the sinapylmalic acid layer to obtai...

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Abstract

The invention belongs to the field of display technologies, and particularly relates to a quantum dot light emitting diode and a preparation method thereof. The quantum dot light emitting diode includes an anode, a cathode, and a quantum dot light emitting layer arranged between the anode and the cathode. A composite electron transport layer is arranged between the cathode and the quantum dot light emitting layer. The composite electron transport layer contains an electron transport material and an ultraviolet absorbing material. The composite electron transport layer of the quantum dot lightemitting diode contains the electron transport material and the ultraviolet absorbing material. The functional groups in the ultraviolet absorbing material are combined with vacancies or dangling bonds on the surface of the electron transport material to passivate the surface defects of the electron transport material, thereby avoiding the phenomenon of fluorescence quenching of the quantum dot light emitting diode and further improving the light emitting performance of the device.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] Quantum dots (QD), also known as nanocrystals, are particles with three dimensions smaller than or close to the Bohr radius (generally no more than 10nm in diameter), usually II-VI or III-V elements composed of nanoparticles. It is precisely because of the extremely small size of quantum dots that the movement of electrons in them in different directions will be restricted. Therefore, its optical and electronic properties are different from large particles, and it has special physical effects such as quantum confinement effect, surface effect, quantum tunnel effect, and dielectric confinement effect. Quantum dot technology has a wide range of applications, such as semiconductor transistors, solar cells, LEDs, quantum computing, medical imaging, etc., among which displ...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K50/16H10K71/40C01B19/04C09K11/883B82Y20/00B82Y40/00H10K50/11H10K71/00H10K2101/10H10K2102/00
Inventor 梁柱荣曹蔚然钱磊
Owner TCL CORPORATION
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