41results about How to "Avoid Luminescence Quenching" patented technology

The invention provides bio-based carbon nano dot fluorescent powder, a preparation method and applications thereof, belongs to the scientific field of nano materials, and aims to solve the problems that in the prior art the luminescent quantum efficient of conventional carbon nano dot based luminescent materials is low and the luminescent materials are difficult to process. The bio-based carbon nano dot fluorescent powder takes the carbon nano dots as the central luminescent materials; biological products such as starch, agar powder, and the like are taken as the dispersing medium; the carbon nano dots are evenly bonded to the selected particle surfaces of the biological product powder through hydrogen bonds, thus the carbon nano dots are highly dispersed in space, the solid-state luminescence quenching caused by conglomeration is effectively avoided, and the high efficient luminescence of carbon nano dots in a solid-state system is achieved. The invention further provides a preparation method of the bio-based carbon nano dot fluorescent powder, and the provided fluorescent powder can be applied to the industries such as temperature sensor, illumination and display, fluorescent paint, and the like.

The invention provides an organic light-emitting diode which comprises an anode, a hole transport layer, a light-emitting functional layer, an electron transport layer, an electron injection layer and a cathode which are sequentially arranged, wherein the hole transport layer and the electron transport layer are distributed on bipolar materials on the same group through adopting an electron orbit and a hole orbit, and both the hole and electron mobilities of the bipolar materials which are adopted by the hole transport layer and the electron transport layer are between 1*10<-4> and 1*10<-2>cm <2>V<-1> s<-1>. The electron orbit and the hole orbit which are adopted by the diode are distributed on the materials on the same group, the electron transport performance and hole transport mobility which respectively correspond to the hole and the electron transport materials are also similar, so the effective charge compound balance performances are enabled to be similar, and accordingly, the charge compound balance is ensured.

The invention provides a novel GaN-based LED structure and a manufacturing method of the novel GaN-based LED structure, and belongs to the field of semiconductor photoelectronic device manufacturing. Compared with the prior art, the novel GaN-based LED structure and the manufacturing method of the novel GaN-based LED structure are characterized in that a p- type GaN epitaxial layer doped with Mg grows on a p+ -GaN layer and an n+ -GaN layer at a high temperature; Si atoms in the n+ -GaN layer can effectively restrain forming of point defects and the luminescence quenching phenomenon of the GaN epitaxial layer, and the p+ -GaN layer is beneficial for improving hole current injection efficiency and reducing the working voltage of an LED; because the GaN-based LED grows on the p+ -GaN layer and the n+ -GaN layer at the high temperature, the crystalline quality, the hole concentration and the mobility ratio of the p- type GaN are improved, and accordingly the efficiency of injecting hole current into a quantum well active area and the luminous efficiency of the LED are improved.

The invention belongs to the field of display technologies, and particularly relates to a quantum dot light emitting diode and a preparation method thereof. The quantum dot light emitting diode includes an anode, a cathode, and a quantum dot light emitting layer arranged between the anode and the cathode. A composite electron transport layer is arranged between the cathode and the quantum dot light emitting layer. The composite electron transport layer contains an electron transport material and an ultraviolet absorbing material. The composite electron transport layer of the quantum dot lightemitting diode contains the electron transport material and the ultraviolet absorbing material. The functional groups in the ultraviolet absorbing material are combined with vacancies or dangling bonds on the surface of the electron transport material to passivate the surface defects of the electron transport material, thereby avoiding the phenomenon of fluorescence quenching of the quantum dot light emitting diode and further improving the light emitting performance of the device.

The invention discloses a light-emitting layer material for a carbon-dot-based electroluminescent device. The light-emitting layer material is prepared by the following steps: taking oil-soluble carbon dots as a guest material and polyvinyl carbazole as a main material, and respectively dissolving the oil-soluble carbon dots and the polyvinyl carbazole in a solvent chlorobenzene, and mixing the guest material with the main material according to a mass ratio of 1:(2.5-3.5) to obtain a doped light-emitting layer. The light-emitting layer material provided by the invention can be used to preparea high-brightness carbon-point electroluminescent device, and can effectively inhibit the luminescence quenching of the device. According to the invention, through the adjustment of the device structure, yellow-light, white-light and blue-light carbon-dot electroluminescent diodes are respectively prepared.

The invention discloses an ionic type cyclometalated iridium complex liquid crystal luminescent material and an application thereof. The cyclometalated iridium complex liquid crystal luminescent material adopts phenylpyridine as an anionic ligand and a bipyridyl derivative as an N N ligand; the cyclometalated iridium complex liquid crystal luminescent material adopts a non-planar structure built with a cyclometalated iridium complex as a luminescent core and a biphenyl derivative as a liquid crystal unit. The cyclometalated iridium complex is taken as the luminescent layer, and the non-doped polarizing red electroluminescent device with the single luminescent layer and the polarization ratio being 4 is obtained with a rubbing alignment method.

The invention discloses an inverted green light quantum dot film electroluminescence device. The device comprises a substrate, a cathode, an electron transmission layer, a green light quantum dot luminescence layer, a hole balance transmission layer, a hole transmission layer and an anode which are sequentially laminated, wherein the hole transmission layer comprises a third hole transmission layer, a second hole transmission layer and a first hole transmission layer which are sequentially laminated, and thickness of the hole balance transmission layer is 5-10nm. According to the device, HOMO energy levels of the third transmission layer, the second transmission layer and the first transmission layer decrease sequentially, so step type barrier is formed between the green light quantum dot luminescence layer and the anode, hole injection capability of the hole transmission layer is gradually improved, hole injection requirements of the green light quantum dot film electroluminescence device can be satisfied, moreover, the hole balance layer can prevent direction contact between the first hole transmission material with high mobility and the green light quantum dot luminescence layer to prevent luminescence quenching.

The invention discloses a fluorescence emission material and an organic light-emitting device prepared from the fluorescence emission material. A thiophene/furan [2, 3-b] quinoxaline and tricyclic aromatic hydrocarbon fused high-efficiency blue fluorescence and other color light-emitting materials are constructed through molecular design. The luminescent wavelength of the material can be regulatedto 426nm and 457nm, and the absolute fluorescence quantum yield reaches 65% and 82% respectively. The material can provide beneficial supplement for commercial blue light materials.

The invention relates to the technical field of OLEDs and provides a compound with TADF properties, a display panel comprising the compound and a display device comprising the compound. The compound has a structure shown as formula (1), wherein A1 and A2 are used for representing hydrogen atoms, phosphorus-containing oxygen substituent groups, sulfone substituent groups, aryl boron substituent groups and other electron acceptor groups; L1 and L2 are each independently selected from single bond, phenylene group, thienyl group, naphthylene group, anthranylene group, phenanthrylene group, and pyrenylene group; Ar1 and Ar2 are independently selected from hydrogen atoms, phenyl groups, thienyl groups, naphthyl groups, anthryl groups, phenanthrene groups, pyrenyl groups, phosphorus-containing oxygen group substituent groups, sulfone substituent groups, aryl boron substituent groups and other groups. A fused carbazole structure of the compound has very strong electron donating ability and thermal stability. When the fused carbazole structure is used as an electron donor to be combined with an appropriate acceptor material to form a bipolar main body material to be applied to light-emitting layers, good energy transfer can be realized between the bipolar main body material and a dopant, so that the light-emitting efficiency of devices is improved.

The invention provides an OLED light-emitting device and a preparation method thereof, and belongs to the technical field of display. The OLED light-emitting device comprises a substrate, and an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer and a cathode which are stacked on the substrate; a first ion adsorbent is doped between the anode and the light-emitting layer and is used for adsorbing metal ions dissociating between the anode and the light-emitting layer; a second ion adsorbent is doped between thecathode and the light-emitting layer and is used for adsorbing metal ions dissociating between the cathode and the light-emitting layer. According to the OLED light-emitting device and the preparation method thereof, the metal ions can be prevented from entering the light-emitting layer, and the light-emitting quenching phenomenon can be avoided so that the service life of the OLED light-emittingdevice is prolonged.

The invention discloses high-density terbium/cerium doped scintillation glass. The scintillation glass is prepared from the following components in percentage by weight: 45-60% of SiO2, 15-25%of BaO, 5-15%of Bi2O3, 1-5%of Al2O3, 1-5%of La2O3, 0.5-1.5%of Sb2O3 and 5-15%of Tb2O3, wherein the Bi2O3 is Bi2O3 doped with Ce<3+>. The scintillation glass has the advantages of being good in chemical stability, high in scintillation light luminous efficiency and capable of being used for preparing scintillation optical fiber panels.

The invention discloses a CHI3L1/PC III detection card and a preparation method and application thereof, and belongs to the field of nano materials and nano medicine, an adopted rare earth nano probe is sodium yttrium fluoride coated with erbium sodium fluoride of a core-shell structure, the particle size ranges from 20 nm to 30 nm, the rare earth nano probe is composed of NaErF4 @ NaYF4, NaErF4 is of a total erbium-doped core structure, NaYF4 is a shell layer, and @ indicates that the NaYF4 is coated on the surface of the NaErF4. The nano-probe is a rare earth fluoride nano-material and has the advantages of low background, long luminescence life, strong fluorescence signal, high signal-to-noise ratio and the like, the probe is connected with the antibody through a covalent bond, the labeled product is stable, and the nano-probe has the characteristics of high sensitivity, high accuracy, rapidness, simplicity and convenience in detection and the like, and can assist doctors in judging whether a patient is subjected to hepatic fibrosis or not in the early stage.

The invention discloses a rare earth luminescent material with enhanced visible light/NIR-II emission. The structural formula of the material is NaErF4: 10% Yb, 0.5% Tm@NaGdF4: 20% Yb, and X% Ce@NaGdF4, X = 1-10, the particle size is 20-100 nm, and the material can be used for visible light and near-infrared two-region biological imaging. Compared with reported quantum dots, single-walled carbon nanotubes and small organic molecules with NIR-II emission, the material has the advantages of lower toxicity, narrower band gap emission, controllable size and efficient near-infrared light emission. Besides, Ce3+ is doped in the structure of the material, so that not only is the characteristic emission of Er3+ in NIR-II effectively enhanced, but also luminescence quenching of Er3+ in a visible region is avoided, and finally, the material has relatively strong up-conversion single-band red light emission and NIR-II emission at the same time. Therefore, the material as a bimodal fluorescent probe has potential application value in imaging in a visible region and NIR-II.