Supercharge Your Innovation With Domain-Expert AI Agents!

Method for preparing high-performance material by functionalization of two-dimensional material CaGeTe

A two-dimensional material and functionalization technology, applied in chemical instruments and methods, inorganic chemistry, germanium compounds, etc., can solve problems such as difficult functionalization of GeTe

Inactive Publication Date: 2020-02-04
TIANJIN UNIV
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In 2018, Zhang et al. first experimentally peeled off layered GeTe materials. The single-layer GeTe has an optical bandgap of 1.93eV. Then Qiao et al. calculated GeTe theoretically, and the single-layer has a bandgap of 2.35eV. The experimental results are in good agreement with each other, indicating that the new two-dimensional material GeTe has a suitable band gap, and it is worthy of further research on its optical and electrical properties. However, because GeTe is difficult to functionalize, it is necessary to provide effective means for its functionalization

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing high-performance material by functionalization of two-dimensional material CaGeTe
  • Method for preparing high-performance material by functionalization of two-dimensional material CaGeTe
  • Method for preparing high-performance material by functionalization of two-dimensional material CaGeTe

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0025] Weigh 10mmolCa, 10mmolGe, and 11mmolTe in the glove box in turn, put them in the packaged quartz tube, and sinter them in a CVD tube furnace under vacuum. Rise from room temperature to 1050°C in 400min, maintain for 1200min, then cool down to 800°C in 1200min, and then slowly lower the temperature at 0.5°C / min. To room temperature, wash with toluene and ethanol in turn, after drying, add a magnetic stirrer, 15ml deionized water, 2ml acetonitrile, 60mg CaGeTe precursor, 3ml iodoethanol, and stir and seal to avoid light for 3 days (24 hours a day). GeTe-OH is obtained. Disperse in a vial filled with ethanol, seal the mouth of the bottle with Teflon tape, sonicate for 2 hours to avoid overheating of the bathtub and liquid, maintain water cooling at 20°C, and centrifuge at 3000rmp to obtain the two-dimensional layered semiconductor material GeTe-OH.

example 2

[0027] Weigh 10mmolCa, 10mmolGe, 11mmolTe in the glove box in turn, put them in the packaged quartz tube, CVD tube furnace vacuum sintering, 300min from normal temperature to 1000℃, maintain 1500min, then cool down to 900min in 1000min, and then slowly lower the temperature at 0.5℃ / min To room temperature, wash with toluene and ethanol in turn, after drying, add a magnetic stirrer, 20ml deionized water, 5ml acetonitrile, 100mg CaGeTe precursor, 5ml bromoethanol, stir and seal for 50 hours in the dark to obtain GeTe-OH. Disperse in a vial filled with ethanol, seal the mouth of the bottle with Teflon tape, ultrasonically treat for 5 hours, avoid overheating of the bathtub and liquid, maintain water cooling at 20°C, and centrifuge at 3000rmp to obtain the two-dimensional layered semiconductor material GeTe-OH.

example 3

[0029] Weigh 10mmolCa, 10mmolGe, 11mmolTe in the glove box in turn, put them in the packaged quartz tube, CVD tube furnace vacuum sintering, 400min from room temperature to 1100°C, maintain 1000min, then cool down to 850°C in 1100min, then slowly at 0.1°C / min Cool down to room temperature, rinse with toluene and ethanol in turn, and after drying, add a magnetic stirrer, 10ml deionized water, 1ml acetonitrile, 50mg CaGeTe precursor, 1ml 3-iodopropanol, and stir for 100 hours to obtain GeTe -OH. Disperse in a vial filled with ethanol, seal the bottle mouth with Teflon tape, ultrasonically treat for 1 hour, avoid overheating of the bathtub and liquid, maintain water cooling at 20°C, and centrifuge at 5000rmp to obtain the two-dimensional layered semiconductor material GeTe-OH.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
carrier mobilityaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for preparing a high-performance material by functionalization of a two-dimensional material CaGeTe. According to the method, programmed temperature control is performed in a CVD tube furnace, a CaGeTe precursor is obtained by sintering, the precursor is rinsed sequentially with toluene and ethanol for several times, drying is performed, then a magnetic stirring bar, deionized water, acetonitrile, the CaGeTe precursor and 2-iodoethanol are added into a flask with three necks, continuous rotation of the stirring bar is ensured, and a sealed reaction is carried out to obtain GeTe-OH, the GeTe-OH is dispersed in a vial filled with ethanol, a mouth of the vial is sealed with a Teflon tape, ultrasonic treatment is performed for 2 h, overheating of a bathtub anda liquid is avoided, water cooling is performed to maintain a temperature at 20 DEG C, and centrifugal separation is performed to obtain a two-dimensional layered semiconductor material GeTe-OH. Compared with CaGeTe, the two-dimensional material GeTe-OH obtained after connecting hydroxyl groups has a significantly improved optical band gap, and has relatively great potential for applications in optoelectronic devices, photo-catalysis, and other aspects.

Description

technical field [0001] The invention belongs to the technical field of two-dimensional functional materials, and more specifically relates to the organic functionalization of two-dimensional material CaGeTe to obtain GeTe-OH. Background technique [0002] Two-dimensional layered transition metal chalcogenide-TMDCs with a graphene-like structure, based on their excellent light absorption rate and easy-to-adjust optical bandgap, are widely used in photodetectors, field-effect transistors, etc., and are favored by scholars. focus on. The two-dimensional group IV metal chalcogenides-GIVMCs (metals mainly include Si, Ge, Sn, and chalcogen mainly include O, S, Se, Te) with a similar structure exhibit optical properties suitable for photocatalysis ( For example, Shi et al. calculated that the light absorption rate of single-layer SnSe can reach 38%), excellent electrical properties (such as currently based on SnS 2 The carrier mobility of the prepared FET device reaches 230cm2·V ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01G17/00
CPCC01G17/00C01P2004/20C01P2006/40
Inventor 封伟张鑫赵付来王宇冯奕钰李瑀
Owner TIANJIN UNIV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com