Method for depositing perovskite film on hydrophobic hole transport layer

A technology of hole transport layer and perovskite, which is applied in the direction of electrical components, circuits, electric solid devices, etc., can solve the problems of deteriorating luminescent properties, poor compatibility, unfavorable perovskite crystallization and film formation, etc., and achieve improved fluorescence production The effect of high efficiency, wettability improvement, high quality and rapid preparation

Inactive Publication Date: 2020-02-04
SHANGHAI UNIV
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Problems solved by technology

[0003] However, some commonly used hole transport materials are relatively hydrophobic, such as: poly(9,9-dioctylfluorene-CO-N-(4-butylphenyl)diphenylamine) (TFB), polyvinylcarbazole (PVK), etc., have poor c

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  • Method for depositing perovskite film on hydrophobic hole transport layer
  • Method for depositing perovskite film on hydrophobic hole transport layer
  • Method for depositing perovskite film on hydrophobic hole transport layer

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[0028] The above solution will be further described below in conjunction with specific implementation examples. The preferred embodiments of the present invention are described in detail as follows:

[0029] In this embodiment, a method for depositing a perovskite film on a hydrophobic hole transport layer includes the following steps:

[0030] a. Preparation of hole transport layer solution:

[0031] Using poly(9,9-dioctylfluorene-CO-N-(4-butylphenyl)diphenylamine) (TFB) and polyvinylcarbazole (PVK) as raw materials, weigh the masses of PVK and TFB respectively 6 and 4 mg, dissolved in 1ml of chlorobenzene solvent to obtain a raw material mixture, use a stirrer to stir the raw material mixture for 2 hours, and then use a 0.45μm polytetrafluoroethylene filter to filter the raw material mixture to obtain a uniform mixture PVK: TFB solution, spare;

[0032] b. Preparation of PVP solution:

[0033] Dissolve PVP in absolute ethanol to make the concentration of PVP 1.5mg / ml, as a modifier ...

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Abstract

The invention discloses a method for depositing a perovskite film on a hydrophobic hole transport layer. A high-quality perovskite film is prepared by using a hole transport layer modified by a polyvinylpyrrolidone (PVP) interface. A PVC interface modification layer can be introduced between the hole transport layer and the perovskite film to prepare the perovskite film with high smoothness and high fluorescence yield. Compared with the perovskite film prepared by the traditional method without PVC modification, the surface roughness of the film modified by the PVC interface is reduced, and the fluorescence yield is enhanced. In the method disclosed by the invention, the interface of HTL is modified by PVP, the pyrrolidone portion in the PVP has good hydrophilicity, so that the wettabilityof a perovskite precursor to the HTL is greatly improved, the nucleation site of the perovskite is improved, and smooth and flat perovskite films can be prepared.

Description

technical field [0001] The invention relates to a method for preparing a perovskite luminescent material, in particular to a method for preparing a perovskite thin film, which is applied in the technical field of preparation technology of the functional layer thin film of a perovskite photoelectric device. Background technique [0002] In recent years, solution-processable perovskite luminescent materials have become a research hotspot in the field of optoelectronics. In particular, the external quantum efficiency of perovskite light-emitting diodes (LEDs) has exceeded 20%, comparable to organic LEDs and quantum dot LEDs. For perovskite light-emitting thin films prepared by solution method, the film quality is crucial to the performance of perovskite LED devices. If the formed perovskite film is discontinuous and porous, it will not only lead to poor moisture resistance of the film, but also cause serious device leakage current, which will easily lead to a significant decre...

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Application Information

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IPC IPC(8): H01L51/56H01L51/54H01L51/50
CPCH10K71/12H10K85/141H10K50/15
Inventor 孔令媚王浩然杨绪勇
Owner SHANGHAI UNIV
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