Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for depositing perovskite film on hydrophobic hole transport layer

A technology of hole transport layer and perovskite, which is applied in the direction of electrical components, circuits, electric solid devices, etc., can solve the problems of deteriorating luminescent properties, poor compatibility, unfavorable perovskite crystallization and film formation, etc., and achieve improved fluorescence production The effect of high efficiency, wettability improvement, high quality and rapid preparation

Inactive Publication Date: 2020-02-04
SHANGHAI UNIV
View PDF5 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, some commonly used hole transport materials are relatively hydrophobic, such as: poly(9,9-dioctylfluorene-CO-N-(4-butylphenyl)diphenylamine) (TFB), polyvinylcarbazole (PVK), etc., have poor compatibility with the solvent dimethyl sulfoxide (DMSO) of the perovskite precursor, which is not conducive to the crystallization and film formation of perovskite, and deteriorates its luminescent properties.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for depositing perovskite film on hydrophobic hole transport layer
  • Method for depositing perovskite film on hydrophobic hole transport layer
  • Method for depositing perovskite film on hydrophobic hole transport layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] Below in conjunction with specific implementation example, above-mentioned scheme is described further, and preferred embodiment of the present invention is described in detail as follows:

[0029] In this embodiment, a method for depositing a perovskite film on a hydrophobic hole transport layer comprises the following steps:

[0030] a. Preparation of hole transport layer solution:

[0031] Using poly(9,9-dioctylfluorene-CO-N-(4-butylphenyl) diphenylamine) (TFB) and polyvinylcarbazole (PVK) as raw materials, weigh the quality of PVK and TFB respectively 6 and 4 mg, dissolved in 1ml of chlorobenzene solvent to obtain a raw material mixture, use a stirrer to stir the raw material mixture for 2 hours, and then use a 0.45 μm polytetrafluoroethylene filter to filter the raw material mixture to obtain a uniform mixture PVK:TFB solution, spare;

[0032] b. Preparation of PVP solution:

[0033] Dissolve PVP in absolute ethanol so that the concentration of PVP is 1.5 mg / ml,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for depositing a perovskite film on a hydrophobic hole transport layer. A high-quality perovskite film is prepared by using a hole transport layer modified by a polyvinylpyrrolidone (PVP) interface. A PVC interface modification layer can be introduced between the hole transport layer and the perovskite film to prepare the perovskite film with high smoothness and high fluorescence yield. Compared with the perovskite film prepared by the traditional method without PVC modification, the surface roughness of the film modified by the PVC interface is reduced, and the fluorescence yield is enhanced. In the method disclosed by the invention, the interface of HTL is modified by PVP, the pyrrolidone portion in the PVP has good hydrophilicity, so that the wettabilityof a perovskite precursor to the HTL is greatly improved, the nucleation site of the perovskite is improved, and smooth and flat perovskite films can be prepared.

Description

technical field [0001] The invention relates to a method for preparing a perovskite luminescent material, in particular to a method for preparing a perovskite thin film, which is applied in the technical field of preparation technology of the functional layer thin film of a perovskite photoelectric device. Background technique [0002] In recent years, solution-processable perovskite luminescent materials have become a research hotspot in the field of optoelectronics. In particular, the external quantum efficiency of perovskite light-emitting diodes (LEDs) has exceeded 20%, comparable to organic LEDs and quantum dot LEDs. For perovskite light-emitting thin films prepared by solution method, the film quality is crucial to the performance of perovskite LED devices. If the formed perovskite film is discontinuous and porous, it will not only lead to poor moisture resistance of the film, but also cause serious device leakage current, which will easily lead to a significant decre...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L51/56H01L51/54H01L51/50
CPCH10K71/12H10K85/141H10K50/15
Inventor 孔令媚王浩然杨绪勇
Owner SHANGHAI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com