A kind of graphene diamond tungsten copper alloy and its preparation and application
A tungsten-copper alloy and graphene technology, applied in the field of materials, can solve problems such as hindering the development of original research work, low graphene density, and easy agglomeration interface bonding.
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Embodiment 1
[0077] Embodiment 1 Graphene diamond tungsten copper alloy 1 (tungsten consumption is 69wt%, and diamond consumption is 1wt%)
[0078] Mix high-purity copper powder and silicon dioxide with an average particle size of 50 μm in a mixer, and the mass fraction of copper powder is 80%, put it into a CVD furnace, evacuate to a vacuum of 8Pa, and then pass it into the Hydrogen gas, the pressure is 50Pa, the heating rate is 10°C / min, the temperature is raised to 800°C, the temperature is kept for 30min, and then methane gas is introduced, the gas flow rate is 100sccm, and the growth is 60min. The grown mixed powder was taken out, and ultrasonically cleaned in alcohol to obtain graphene / copper powder 1 coated with graphene on the entire surface and uniformly dispersed. Add graphene / copper powder 1 to tungsten powder (particle size about 10 μm) and diamond powder (particle size about 1 μm), mix evenly, hot press and sinter, the background vacuum is 5 Pa, the temperature is 1200 ° C, th...
Embodiment 2
[0089] Embodiment 2 graphene diamond tungsten copper alloy 2 (tungsten consumption is 78wt%, and diamond consumption is 2wt%)
[0090] Mix high-purity copper powder with an average particle size of about 30 μm and titanium nitride in a mixer, and the mass fraction of copper powder is 90%, put it into a CVD furnace, vacuumize to a vacuum of 5Pa, and then pass Inject hydrogen, the pressure is 100Pa, the heating rate is 10°C / min, the temperature is raised to 900°C, and the temperature is kept for 30min, then acetylene gas is introduced, the gas flow rate is 200sccm, and the growth is 60min. The grown mixed powder was taken out, and ultrasonically cleaned in alcohol to obtain graphene / copper powder 2 coated with graphene on the entire surface and uniformly dispersed. Add graphene / copper powder 2 to tungsten powder and diamond powder, mix evenly, hot press and sinter, the background vacuum is 5Pa, the temperature is 1000°C, the pressure is 35MPa, and the processing time is 60min to...
Embodiment 3
[0091] Embodiment 3 graphene diamond tungsten copper alloy 3 (tungsten consumption is 79wt%, and diamond consumption is 1wt%)
[0092]Mix high-purity copper powder and graphite with an average particle size of about 50 μm in a mixer, where the mass fraction of copper powder is 70%, put it into a CVD furnace, evacuate to a vacuum of 7Pa, and then pass in hydrogen , the pressure is 60Pa, the heating rate is 10°C / min, the temperature is raised to 1000°C, and the temperature is kept for 30min, then methane gas is introduced, the gas flow rate is 100sccm, and the growth is 30min. The grown mixed powder was taken out, and ultrasonically cleaned in alcohol to obtain graphene / copper powder 3 coated with graphene on the entire surface and uniformly dispersed. Add graphene / copper powder 3 to tungsten powder and diamond powder, mix evenly, hot press and sinter, the background vacuum is 10Pa, the temperature is 1100°C, the pressure is 35MPa, and the processing time is 60min to obtain bloc...
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