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A kind of graphene diamond tungsten copper alloy and its preparation and application

A tungsten-copper alloy and graphene technology, applied in the field of materials, can solve problems such as hindering the development of original research work, low graphene density, and easy agglomeration interface bonding.

Active Publication Date: 2022-04-08
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI +3
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the low density of graphene, easy agglomeration, and interface bonding during the preparation process are important reasons that restrict the development of graphene / metal composites.
It will be extremely difficult to obtain high-performance graphene-diamond-tungsten-copper alloys by infiltration after traditional blending, thus hindering the development of some original research work in this field, and also prompting researchers to work on composite materials. Propose a new method on the preparation of

Method used

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  • A kind of graphene diamond tungsten copper alloy and its preparation and application
  • A kind of graphene diamond tungsten copper alloy and its preparation and application
  • A kind of graphene diamond tungsten copper alloy and its preparation and application

Examples

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Comparison scheme
Effect test

Embodiment 1

[0077] Embodiment 1 Graphene diamond tungsten copper alloy 1 (tungsten consumption is 69wt%, and diamond consumption is 1wt%)

[0078] Mix high-purity copper powder and silicon dioxide with an average particle size of 50 μm in a mixer, and the mass fraction of copper powder is 80%, put it into a CVD furnace, evacuate to a vacuum of 8Pa, and then pass it into the Hydrogen gas, the pressure is 50Pa, the heating rate is 10°C / min, the temperature is raised to 800°C, the temperature is kept for 30min, and then methane gas is introduced, the gas flow rate is 100sccm, and the growth is 60min. The grown mixed powder was taken out, and ultrasonically cleaned in alcohol to obtain graphene / copper powder 1 coated with graphene on the entire surface and uniformly dispersed. Add graphene / copper powder 1 to tungsten powder (particle size about 10 μm) and diamond powder (particle size about 1 μm), mix evenly, hot press and sinter, the background vacuum is 5 Pa, the temperature is 1200 ° C, th...

Embodiment 2

[0089] Embodiment 2 graphene diamond tungsten copper alloy 2 (tungsten consumption is 78wt%, and diamond consumption is 2wt%)

[0090] Mix high-purity copper powder with an average particle size of about 30 μm and titanium nitride in a mixer, and the mass fraction of copper powder is 90%, put it into a CVD furnace, vacuumize to a vacuum of 5Pa, and then pass Inject hydrogen, the pressure is 100Pa, the heating rate is 10°C / min, the temperature is raised to 900°C, and the temperature is kept for 30min, then acetylene gas is introduced, the gas flow rate is 200sccm, and the growth is 60min. The grown mixed powder was taken out, and ultrasonically cleaned in alcohol to obtain graphene / copper powder 2 coated with graphene on the entire surface and uniformly dispersed. Add graphene / copper powder 2 to tungsten powder and diamond powder, mix evenly, hot press and sinter, the background vacuum is 5Pa, the temperature is 1000°C, the pressure is 35MPa, and the processing time is 60min to...

Embodiment 3

[0091] Embodiment 3 graphene diamond tungsten copper alloy 3 (tungsten consumption is 79wt%, and diamond consumption is 1wt%)

[0092]Mix high-purity copper powder and graphite with an average particle size of about 50 μm in a mixer, where the mass fraction of copper powder is 70%, put it into a CVD furnace, evacuate to a vacuum of 7Pa, and then pass in hydrogen , the pressure is 60Pa, the heating rate is 10°C / min, the temperature is raised to 1000°C, and the temperature is kept for 30min, then methane gas is introduced, the gas flow rate is 100sccm, and the growth is 30min. The grown mixed powder was taken out, and ultrasonically cleaned in alcohol to obtain graphene / copper powder 3 coated with graphene on the entire surface and uniformly dispersed. Add graphene / copper powder 3 to tungsten powder and diamond powder, mix evenly, hot press and sinter, the background vacuum is 10Pa, the temperature is 1100°C, the pressure is 35MPa, and the processing time is 60min to obtain bloc...

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Abstract

The invention relates to a graphene diamond tungsten copper alloy and its preparation and application. Specifically, the present invention discloses a method for preparing graphene diamond tungsten-copper alloy, said method comprising the steps of: 1) providing a first mixture, said first mixture comprising copper powder and an optional dispersant; 2) The first mixture is placed in a CVD furnace, under a first pressure, a first temperature and an optional first gas, a gaseous carbon source material is introduced to react to obtain a graphene / copper powder; 3) the Add tungsten powder and diamond powder to the graphene / copper powder, and carry out sintering treatment to obtain the graphene-diamond-tungsten-copper alloy. The invention also discloses the graphene diamond tungsten copper alloy prepared by the method and its application. The preparation method has the characteristics of simple process, cheap and easy-to-obtain raw materials, safety and environmental protection, low cost and easy large-scale popularization. The graphene diamond tungsten copper alloy has both high wear resistance and high ablation resistance.

Description

technical field [0001] The invention relates to the field of materials, in particular to a graphene-diamond-tungsten-copper alloy and its preparation and application. Background technique [0002] Tungsten-copper alloy has good electrical and thermal conductivity, good high-temperature strength, and is widely used in high-voltage switches, microelectronics, machinery, aerospace and other fields. However, with the development of high-voltage power grids to large-capacity and ultra-high voltage, higher requirements are put forward for the wear resistance and ablation resistance of tungsten-copper alloys. In order to enhance the performance of tungsten-copper alloys, the methods reported in the literature include adding a third phase to tungsten-copper alloys, such as adding rare earth elements, rare earth oxides (La 2 o 3 , ThO 2 , CeO 2 ) and the second phase (HfC, TiC, WC) into the tungsten-copper alloy to improve the arc ablation performance of the tungsten-copper alloy...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22C1/10C22C1/05C22C26/00C23C16/26C22C27/04
CPCC22C1/05C22C26/00C23C16/26C22C27/04
Inventor 林正得戴丹江南韩钰祝志祥陈保安丁一张强王强
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI