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Polydimethylsiloxane film, flexible capacitive sensor and preparation method thereof

A polydimethylsiloxane and dimethylsiloxane technology, which is applied in the field of flexible sensors, can solve the problems of low signal-to-noise ratio, inability to respond, and difficulty in measuring tiny pressures.

Active Publication Date: 2021-08-20
GUANGDONG SYGOLE INTELLIGENT TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

General flexible capacitive sensors can increase the resolution by reducing the electrode width and the distance between the two plates, but this will reduce the capacitance and cause a lower signal-to-noise ratio
At the same time, due to the influence of various electrical noises such as wires and circuit boards, it will become more difficult to measure small pressure
[0003] At present, the flexible electronic skin of fully flexible and multi-functional robots is mostly focused on tactile perception, and the method is close to the perception ability, which cannot respond when the action object is approaching. The tensile sensor provides the possibility to solve the above problems. The sensor sensing principle is based on capacitive sensing, which can detect both pressure and spatial positioning distance
[0004] Flexible electronic technology is born out of solid-state electronic technology, so it also uses a large number of traditional semiconductor processes, but some flexible materials do not have good adaptability to traditional processes, so it is necessary to improve the process. The present invention provides a high-sensitivity flexible Capacitive sensor and its preparation method

Method used

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  • Polydimethylsiloxane film, flexible capacitive sensor and preparation method thereof
  • Polydimethylsiloxane film, flexible capacitive sensor and preparation method thereof
  • Polydimethylsiloxane film, flexible capacitive sensor and preparation method thereof

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preparation example Construction

[0037] In order to improve the manufacturing success rate and quality of the sensor, a method for preparing a multi-high-sensitivity flexible capacitive sensor mainly includes a multi-layer stepped mesoporous microstructure process, an electrode process, a sacrificial layer process and a reactive ion etching process. Among them, the multi-layer stepped mesoporous microstructure process is used to prepare the intermediate dielectric layer, the electrode process is used to prepare the upper electrode layer and the lower electrode layer, the sacrificial layer process is used to release the sensor from the silicon wafer 1, and the reactive ion etching process Tested for bonding packages of top electrode layer, middle dielectric layer and bottom electrode layer. The multi-layer stepped mesoporous microstructure process uses a centrifugal method to prepare a multi-layer ordered microstructure with a pore size that increases layer by layer on the polydimethylsiloxane. The electrode t...

Embodiment 1

[0068] First, upper and lower electrodes are prepared, wherein steps (5) to (10) are photolithographic techniques.

[0069] (1) Clean the polished surface of the 2-inch silicon wafer 1 with acetone 11, isopropanol 12 and deionized water in sequence, and then dry it with nitrogen;

[0070] (2) Spin-coat 10% polyvinyl alcohol aqueous solution on the polished surface of the silicon wafer 1, the spin-coating speed is 500 rpm, and the spin-coating time is 60 seconds, and then place the silicon wafer 1 on the hot plate Heating, the heating temperature is 80°C, and the heating time is 15 minutes, the polyvinyl alcohol is cured to form a film, and the sacrificial layer 2 is formed;

[0071](3) Spin-coat polydimethylsiloxane on the silicon wafer 1 coated with the sacrificial layer at a spin-coating speed of 1000 rpm for 60 seconds, and then place the silicon wafer 1 on the hot plate Heating on top, the heating temperature is 90°C, and the heating time is 20 minutes, the polydimethylsi...

Embodiment 2

[0089] First, upper and lower electrodes are prepared, wherein steps (5) to (10) are photolithographic techniques.

[0090] (1) Clean the polished surface of the 2-inch silicon wafer 1 with acetone 11, isopropanol 12 and deionized water in sequence, and then dry it with nitrogen;

[0091] (2) Spin-coat 10% polyvinyl alcohol aqueous solution on the polished surface of the silicon wafer 1 at a spin-coating speed of 600 rpm for 50 seconds, then place the silicon wafer 1 on a hot plate Heating, the heating temperature is 80°C, and the heating time is 12 minutes, the polyvinyl alcohol is cured to form a film, and the sacrificial layer 2 is formed;

[0092] (3) Spin-coat polydimethylsiloxane on the silicon wafer 1 coated with the sacrificial layer at a spin-coating speed of 900 rpm for 70 seconds, and then place the silicon wafer 1 on the hot plate Heating on top, the heating temperature is 80°C, and the heating time is 25 minutes, the polydimethylsiloxane is cured to form a film, ...

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Abstract

The invention belongs to the field of flexible sensors, and discloses a polydimethylsiloxane film, a flexible capacitive sensor and a preparation method thereof. The sensor includes an upper electrode layer, an intermediate dielectric layer and a lower electrode layer, and the upper and lower electrode layers have the same structure. Both include a flexible base material and liquid metal embedded in the base material; the intermediate dielectric layer is between the upper and lower electrode layers, which has a multi-layer stepped mesoporous microstructure. Compared with the flexible capacitive sensor without the dielectric layer, The linearity of the flexible capacitive sensor is improved; when the sensor is subjected to pressure or is approached by a conductor, the pressure on the sensor or the distance between the conductor and the sensor is obtained by measuring the change of the capacitance of the sensor. The invention also discloses a preparation method of the sensor. Through the present invention, a flexible capacitive sensor based on a liquid metal electrode and a dielectric layer of a multi-layer stepped mesoporous microstructure is designed to realize high sensitivity of the flexible sensor.

Description

technical field [0001] The invention belongs to the field of flexible sensors, and more specifically relates to a polydimethylsiloxane film, a flexible capacitive sensor and a preparation method thereof. Background technique [0002] With the development of science and technology and society, robots have gradually entered daily life from applications in scientific research, industrial automation, and medical care. Moreover, the emergence of emerging robots has put forward higher requirements for equipment hardware. Because of its good flexibility and stretchability, flexible sensors have become a hot emerging research field in the development of modern electronic systems, and combined with biomechanics, medical engineering, computer technology , robotics and other cutting-edge interdisciplinary subjects, and has developed a series of powerful electronic products such as electronic skin, medical implants, bionic prostheses, human-computer interaction interfaces, and non-invas...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01D5/24
CPCG01D5/24
Inventor 吴豪魏丹阳
Owner GUANGDONG SYGOLE INTELLIGENT TECH CO LTD
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