A manufacturing method of a
silicon-based deep-hole
microstructure comprises the following steps: firstly, sequentially putting a
silicon wafer into
hydrogen peroxide and
ammonia water, respectively soaking for 10 minutes, then cleaning with
distilled water, putting in a clean place, and airing for later use; preparing turbid liquid in
microsphere deionized water, selecting an original microspheresolution with an appropriate size of 400nm-100mu m, adding
ethanol of which the volume is twice of that of the original
microsphere solution, and performing ultrasonic treatment in an ultrasonic instrument for half an hour, so that
polystyrene and
ethanol are uniformly mixed; enabling the microspheres to form single-layer ordered arrangement on the liquid level; transferring the arranged microspheres to a
silicon wafer by using a liquid level
sedimentation method; reducing the sizes of the microspheres to obtain specific sizes; depositing 10-20 nm
chromium metal on the etched sample
wafer through a
coating technology, and removing microspheres to form a
microstructure with a hole array on a
chromium film; and taking the
chromium film with the hole array as a
mask, removing the chromium film after
etching, and finally manufacturing the silicon-based
deep hole microstructure. A simple, efficient, large-area and low-cost method is provided for microstructuring the silicon-based material.