Manufacturing method of silicon-based deep hole microstructure

Abstract

A manufacturing method of a silicon-based deep-hole microstructure comprises the following steps: firstly, sequentially putting a silicon wafer into hydrogen peroxide and ammonia water, respectively soaking for 10 minutes, then cleaning with distilled water, putting in a clean place, and airing for later use; preparing turbid liquid in microsphere deionized water, selecting an original microspheresolution with an appropriate size of 400nm-100mu m, adding ethanol of which the volume is twice of that of the original microsphere solution, and performing ultrasonic treatment in an ultrasonic instrument for half an hour, so that polystyrene and ethanol are uniformly mixed; enabling the microspheres to form single-layer ordered arrangement on the liquid level; transferring the arranged microspheres to a silicon wafer by using a liquid level sedimentation method; reducing the sizes of the microspheres to obtain specific sizes; depositing 10-20 nm chromium metal on the etched sample wafer through a coating technology, and removing microspheres to form a microstructure with a hole array on a chromium film; and taking the chromium film with the hole array as a mask, removing the chromium film after etching, and finally manufacturing the silicon-based deep hole microstructure. A simple, efficient, large-area and low-cost method is provided for microstructuring the silicon-based material.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to a method for making a deep-hole microstructure on a silicon base. Background technique [0002] As we all know, silicon material is the most widely used semiconductor material in the world. Compared with other semiconductor materials, silicon materials have the following outstanding advantages: First, the silicon element reserves are huge, wafer silicon processing is convenient, the mechanical properties are good, and the cost is lower compared with other semiconductor materials; Transparent, it is very suitable as a transmission waveguide in certain wavelength bands; third, silicon-based optoelectronic technology is highly compatible with the current mature complementary metal oxide semiconductor process, and the accumulation of technical experience is very sufficient. Due to the above factors, silicon-based semiconductor devices have advantages that many non-si...

AI Technical Summary

Problems solved by technology

At present, there are generally micro-nano processing methods such as electron beam exposure, focused ion beam etching, and nanoimprinting to obtain microstructured silicon-based materials, which are expensive and not suitable for large-scale production; in addition, using femtosecond laser Such as black silicon materials made by other means, also face the problem of not being able to precisely control the size of the microstructure

Images