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A two-dimensional transition metal carbide/bismuth telluride or its derivative-based thermoelectric composite material and its preparation

A technology of transition metals and composite materials, applied in the direction of thermoelectric device junction lead-out materials, thermoelectric device manufacturing/processing, etc., can solve the problems of low electrical conductivity, uneven dispersion, high thermal conductivity, etc., to reduce thermal conductivity , wide application range, high thermoelectric performance effect

Active Publication Date: 2021-06-01
DONGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a two-dimensional transition metal carbide / bismuth telluride or its derivative-based thermoelectric composite material and its preparation method to overcome the uneven dispersion of bismuth telluride-based thermoelectric composite materials in the prior art , low electrical conductivity and high thermal conductivity

Method used

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  • A two-dimensional transition metal carbide/bismuth telluride or its derivative-based thermoelectric composite material and its preparation
  • A two-dimensional transition metal carbide/bismuth telluride or its derivative-based thermoelectric composite material and its preparation
  • A two-dimensional transition metal carbide/bismuth telluride or its derivative-based thermoelectric composite material and its preparation

Examples

Experimental program
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Effect test

Embodiment 1

[0030] A high-performance MXene / Sb2 Te 3 Preparation method of thermoelectric composite powder:

[0031] 2mmol SbCl 3 Disperse with 3mmol Te powder in 100ml water, then add 1.3g sodium hydroxide, 0.6g EDTA-2Na and 0.8g sodium borohydride, carry out hydrothermal reaction at 200°C, the reaction time is 12h, and obtain Sb 2 Te 3 Nano powder. Take 1g Sb 2 Te 3 The nanopowder was dispersed in 100 ml of ethanol solution, and 1 g of APTS was added as a surface modifier for modification. The modification temperature was 150° C. for 6 h, under nitrogen protection. After modification, filter with suction, wash with ethanol repeatedly 3 to 5 times, and dry under vacuum at 60°C. 10g modified Sb 2 Te 3 Disperse the powder in 200ml of water, adjust the pH value to 3, and add Ti with a mass ratio of 1wt% and a concentration of 3mg / ml dropwise while stirring. 3 C 2 T x Aqueous dispersion, Ti 3 C 2 T x coated with Sb 2 Te 3 Powder co-deposited, filtered, and vacuum dried at 60°...

Embodiment 2

[0034] According to embodiment 1, in embodiment 1 " will 2mmol SbCl 3 and 3mmol Te powder dispersed in 100ml water "modify" to "0.5mmolBiCl 3 , 1.5 mmol SbCl 3 and 3mmol Te powder are dispersed in 100ml water ", all the other are identical with embodiment 1, obtain Bi 0.5 Sb 1.5 Te 3 Nano powder. Take 1g Bi 0.5 Sb 1.5 Te 3 The nanopowder was dispersed in 100 ml of toluene solution, Bi 0.5 Sb 1.5 Te 3 The modification process of the nanopowder is the same as in Example 1. 10g modified Bi 0.5 Sb 1.5 Te 3 Disperse the powder in 200ml of water, adjust the pH value to 3, and add Ti with a mass ratio of 2wt% and a concentration of 3mg / ml drop by drop while stirring 3 C 2 T x Aqueous dispersion, Ti 3 C 2 T x Wrapped with Bi 0.5 Sb 1.5 Te 3 The powders were co-deposited, filtered, and vacuum-dried at 60°C to obtain 2wt% Ti 3 C 2 T x / Bi 0.5 Sb 1.5 Te 3 Thermoelectric composite powder. The aqueous dispersion of MXene was not added as a control.

[0035] ...

Embodiment 3

[0037] High performance MXene / Bi 2 Te 3 Method for thermoelectric composite powder and bulk material prepared from the powder:

[0038] 2mmol BiCl 3 and 3 mmol TeO 2 Disperse the powder in 100ml of ethylene glycol, then add 1.5g of sodium hydroxide and 1g of PVP, and conduct a solvothermal reaction at 180°C for 16 hours to obtain Bi 2 Te 3 Nano powder. Take 1g Bi 2 Te 3 The nanopowder was dispersed in 100ml of toluene solution, and 1g APTS was added as a surface modifier for modification. The modification temperature was 130°C, and the modification time was 8h, under nitrogen protection. After modification, filter with suction, wash with ethanol repeatedly 3 to 5 times, and dry under vacuum at 60°C. 10g modified Bi 2 Te 3 Disperse the powder in 200ml of water, adjust the pH value to 2, and add Ti with a mass ratio of 1.5wt% and a concentration of 3mg / ml dropwise while stirring. 3 C 2 T x Aqueous dispersion, Ti 3 C 2 T x Wrapped with Bi 2 Te 3 Particles were c...

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Abstract

The invention relates to a two-dimensional transition metal carbide / bismuth telluride or its derivative-based thermoelectric composite material and its preparation. The composite material comprises: bismuth telluride or its derivatives-based thermoelectric material modified by a silane coupling agent and MXene. The preparation method comprises: modifying bismuth telluride or its derivative-based thermoelectric material with a silane coupling agent, and then depositing with MXene heterogeneously, and sintering. The composite material has low thermal conductivity and high electrical conductivity. The method has the characteristics of low cost, simple operation, wide application range, easy industrial batch production and the like.

Description

technical field [0001] The invention belongs to the field of bismuth telluride-based or derivative-based thermoelectric materials and the preparation thereof, in particular to a two-dimensional transition metal carbide / bismuth telluride-based or derivative-based thermoelectric composite material and a preparation method thereof. Background technique [0002] Bismuth telluride-based and its derivative thermoelectric materials have attracted much attention since the 1950s, and are considered to be the benchmark for high-performance thermoelectric materials in the low-to-medium temperature range. by Sb 2 Te 3 , Bi 2 Te 3 and Bi 2 Se 3 The excellent thermoelectric (TE) performance of representative bismuth telluride-based materials is mainly attributed to its high power factor (PF) and low thermal conductivity (κ) caused by the weak bonding between layers formed by van der Waals forces. Studies have shown that thermoelectric properties are optimized by isoelectronic extern...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/22H01L35/16H01L35/34H10N10/855H10N10/01H10N10/852
CPCH10N10/852H10N10/855H10N10/01
Inventor 范宇驰陆晓芳王连军张琪昊顾士甲刘永平江莞
Owner DONGHUA UNIV
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