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Stress-regulated gallium nitride-based infrared-ultraviolet dual-color photodetector and preparation method

A gallium nitride-based, stress-regulating technology, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problem of weak detection performance of infrared detection systems, complex structure of two-color integrated detectors, and infrared-ultraviolet photosensitive materials. Or detection system integration difficulties and other problems, to achieve broad development and application prospects, reduce reflection, enhance the effect of light absorption

Active Publication Date: 2021-02-02
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology

[0005] In order to solve the problems of infrared-ultraviolet photosensitive materials or detection system integration difficulties caused by lattice mismatch, weak detection performance of infrared detection systems after integrated devices, and complex structure of two-color integrated detectors, the present invention provides a stress-regulated nitriding Gallium-based infrared-ultraviolet dual-color photodetector and preparation method

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  • Stress-regulated gallium nitride-based infrared-ultraviolet dual-color photodetector and preparation method
  • Stress-regulated gallium nitride-based infrared-ultraviolet dual-color photodetector and preparation method

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preparation example Construction

[0047] Such as figure 2 As shown, the preparation method of the stress-regulated gallium nitride-based infrared-ultraviolet dual-color photodetector of the present invention mainly includes the following steps:

[0048] Step 1, using hydride vapor phase epitaxy (HVPE), NH 3 Growth of self-supporting GaN single crystal material with molten Ga gas phase transport method or pulling method 1;

[0049] Step 2, growing a buffer layer 2 on the GaN single crystal material 1 by metal organic chemical vapor deposition (MOCVD);

[0050] Step 3, growing a two-dimensional nitride thin film layer 3 on the buffer layer 2 by chemical vapor deposition or metalorganic chemical vapor deposition (MOCVD);

[0051] Step 4: Prepare the first ultraviolet light detector electrode 4 and the second ultraviolet light detector electrode 7 on the GaN single crystal material 1 using the prior art;

[0052] Step 5, preparing infrared photodetector electrodes 5 on the two-dimensional nitride thin film lay...

Embodiment 1

[0057] The stress-regulated gallium nitride-based infrared-ultraviolet dual-color photodetector of this embodiment specifically includes: a GaN single crystal material 1, a buffer layer 2, a two-dimensional nitride thin film layer 3, a first ultraviolet photodetector electrode 4, an infrared photodetector An electrode 5 , a first stress layer 6 , a second ultraviolet light detector electrode 7 , and a second stress layer 8 .

[0058] Among them, the GaN single crystal material 1 adopts GaN, the buffer layer 2 specifically adopts AlN, the two-dimensional nitride thin film layer 3 specifically adopts two-dimensional GaN, the first ultraviolet light detector electrode 4, the infrared light detector electrode 5, the second ultraviolet light detector electrode The device electrode 7, the first stress layer 6 and the second stress layer 8 are all made of diamond-like carbon (DLC).

[0059] The preparation method of the stress-regulated gallium nitride-based infrared-ultraviolet dual...

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Abstract

The invention relates to a gallium nitride-based infrared-ultraviolet dual-color photodetector for stress control and a preparation method thereof, which belong to the field of semiconductors. The present invention includes a GaN single crystal material; on the GaN single crystal material, a first ultraviolet light detector electrode, a buffer layer, a second stress layer and a second ultraviolet light detector electrode are arranged in sequence from left to right; the two ends of the second stress layer are respectively It is in contact with the side of the buffer layer and the second ultraviolet light detector electrode; the two-dimensional nitride thin film layer is arranged on the buffer layer; on the two-dimensional nitride thin film layer, the first stress layer and the infrared light detection layer are arranged in sequence from left to right device electrode; both ends of the first stress layer are respectively in contact with the sides of the first ultraviolet light detector electrode and the infrared light detector electrode. The invention solves the problems of difficulty in integrating infrared-ultraviolet photosensitive materials or detection systems caused by lattice mismatch, weak detection performance of infrared detection systems after integrated devices, and complex structure of two-color integrated detectors. Strong operability and obvious effect.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a stress-regulated gallium nitride-based infrared-ultraviolet dual-color photodetector and a preparation method thereof. Background technique [0002] As the core device of ultraviolet detection technology, ultraviolet detector has received great attention and in-depth research at home and abroad in recent years. In the early days, ultraviolet detectors were mainly used in military fields such as ultraviolet alarms, ultraviolet communications, and ultraviolet guidance. Later, ultraviolet detectors gradually matured and were used in civilian applications. Other fields such as medicine, spectroscopic analysis and particle detection. The first and second-generation semiconductors such as Si and GaAs can be used to make ultraviolet detectors, but due to the characteristics of small forbidden band width, large long-wave cut-off wavelength of the device, and low max...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/101H01L31/18
CPCH01L31/1013H01L31/1856Y02P70/50
Inventor 黎大兵刘新科孙晓娟贾玉萍石芝铭蒋科陈洋
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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