A high-quality diamond growth method and system

Abstract

The invention relates to a high-quality diamond growth method and system. A high-quality diamond growth method, including the steps: S1, pretreating the surface of the seed crystal and putting it into a growth chamber, feeding hydrogen and oxygen to etch the surface of the seed crystal for 15-60 minutes; S2, feeding carbon source growth Diamond; S3, determine whether the growth time reaches the first time, if so, execute step S4; if not, execute step S5; S4, stop feeding carbon source, feed oxygen etching for 10-30min, execute step S2; S5, Detect whether impurities appear on the surface of the diamond, and if so, perform an impurity treatment operation, and perform step S2 after 10-30 minutes; if not, perform step S3. This method does not need to select high-quality diamond sheets as seed crystals, which reduces the cost of seed crystals. The newly grown diamonds grow in layers, and the surface defects of the diamonds are repaired to reduce the number of surface defects without reducing the growth of diamonds. The growth rate is still maintained at a high growth rate, not lower than 8μm / h.

Description

technical field [0001] The invention relates to the field of diamond growth, in particular to a high-quality diamond growth method and system. Background technique [0002] High-quality diamond has a high band gap and a wide light transmission spectrum. At the same time, its ultra-high hardness and thermal conductivity, excellent insulation, and excellent physical and chemical properties such as acid resistance, heat resistance, and radiation resistance can be used in precision machinery. Processing, optical windows, gemstones, MEMS (MEMS, Micro-Electro-Mechanical System, Micro-Electro-Mechanical System), chips and other fields. However, high-quality natural diamond reserves are limited, so people have developed a variety of synthetic diamond methods, such as high temperature and high pressure method, hot wire chemical vapor deposition method. Among them, MPCVD (Microwave plasma chemical vapor deposition, microwave plasma chemical vapor deposition method) synthetic diamond ...

AI Technical Summary

Problems solved by technology

As we all know, diamond can be synthesized by introducing a certain amount of carbon source and controlling appropriate process parameters, but the appearance of surface defects is still very frequent

Therefore, the current mainstream method is to select higher quality diamond as the seed crystal, but the cost is extremely expensive, and it is still impossible to completely avoid the generation of surface defects, such as twin polycrystals, point defects, line defects, etc. The generation of these defects is extremely serious. Hindered the high-end application of diamond

[0004] The patent document whose invention number is 02826062.7 discloses a device and a method for producing diamond, and the CH 4 / H 2 / N 2 In the case of , while adding a certain proportion of O 2 , can reduce the growth temperature, improve the growth quality, but significantly reduce the growth rate

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