A kind of preparation method of two-dimensional atomic crystal molecular superlattice
A two-dimensional atomic crystal and superlattice technology, applied in crystal growth, chemical instruments and methods, single crystal growth, etc., can solve the problems of large consumption of raw materials and high cost, and achieve low raw material cost, good repeatability, and reliability strong control effect
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Embodiment 1
[0043] The non-parallel-plate capacitively coupled plasma chemical deposition system of the experimental equipment in this embodiment has been disclosed in a patent whose publication date is June 10, 2015 and whose publication number is CN104694906A.
[0044] based on figure 1 , a method for preparing a two-dimensional atomic crystal molecular superlattice based on a mild oxygen plasma, comprising the following steps:
[0045] (1) Substrate cleaning: In this embodiment, a silicon wafer plated with a 300nm silicon dioxide layer is used as a substrate, and the substrate is respectively placed in acetone, ethanol, and deionized water for ultrasonic cleaning for 5 minutes each to remove surface organic matter. The ultrasonic frequency is 25KHz. Then bake on a heating platform at 350°C for 30 minutes to remove residues such as acetone and ethanol.
[0046] (2) Sample preparation: This example uses MoS prepared by mechanical exfoliation 2 TLC. Using plastic film on MoS 2 The bl...
Embodiment 2
[0053] The experimental equipment in this example is a parallel-plate capacitively coupled plasma, model PECVD450, purchased from Shenyang Lantian Vacuum Technology Co., Ltd.
[0054] based on figure 2 , a method for preparing a two-dimensional atomic crystal molecular superlattice based on a mild oxygen plasma, comprising the following steps:
[0055] (1) The steps of substrate cleaning are the same as those in Embodiment 1.
[0056] (2) The steps of sample preparation are the same as in Example 1.
[0057] (3) Sample characterization: find MoS with different layers according to the contrast value of the G channel in the optical microscope 2 The samples were then characterized by Raman spectroscopy. This embodiment is a molybdenum disulfide sample with a thickness of 3 layers.
[0058] (4) Sample processing: put a sample with a thickness of 3 layers into figure 2 In the plasma vacuum chamber in the center, the sample needs to be placed vertically and kept perpendicular...
Embodiment 3
[0061] Example 3 MoS with different layers 2 processing time
[0062] (1) The steps of substrate cleaning are the same as those in Embodiment 1.
[0063] (2) The steps of sample preparation are the same as in Example 1.
[0064] (3) Sample characterization: find MoS with different layers according to the contrast value of the G channel in the optical microscope 2 The samples were then characterized by Raman spectroscopy. In this embodiment, molybdenum disulfide samples with a thickness of 2 layers and 6 layers were selected respectively.
[0065] (4) Sample processing: put samples with thickness of 2 layers and 6 layers into figure 1 In the plasma vacuum chamber, the sample needs to be placed horizontally and parallel to the planar spiral inductive antenna; vacuumize to 4.0×10 -3 Below Pa, then pass into O2 Gas, the gas flow rate is 5sccm, the working pressure is 40Pa, turn on the plasma radio frequency power supply, the frequency of the plasma radio frequency power suppl...
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