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A kind of silicon wafer cleaning method

A silicon wafer cleaning and silicon wafer technology, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve problems that are not conducive to workers' health, environmental protection, and high cost, and achieve the promotion of ionized water formation, small environmental impact, and Good cleaning effect

Active Publication Date: 2022-07-19
贵州晟达雅科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional method uses a variety of strong acids with strong oxidizing properties, which is not conducive to workers' health and environmental protection
High volumes of ultrapure water must be rinsed after each cleaning step, thus costly

Method used

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  • A kind of silicon wafer cleaning method
  • A kind of silicon wafer cleaning method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058] like Figures 1 to 2 , the electrolytic cell includes:

[0059] power1;

[0060] The overall rectangular tank body 2;

[0061] The anode ionization chamber 3 accommodates at least one anode electrode 5, and the anode electrode 5 is connected to the positive electrode of the power source 1;

[0062] The cathode ionization chamber 4 accommodates at least one cathode electrode 6, and the cathode electrode 6 is connected to the negative electrode of the power supply 1;

[0063] At least one ion exchange membrane 7, the ion exchange membrane 7 divides the tank body 2 into the cathode ionization chamber 4 and the anode ionization chamber 3;

[0064] The anode ionization chamber 3 includes at least one first water inlet 8 and at least one first water outlet 9 ; the cathode ionization chamber 4 includes at least one second water inlet 10 and at least one second water outlet 11 .

[0065] The ion exchange membrane 7 can be a cation exchange membrane or an anion exchange memb...

Embodiment 2

[0077] A method for cleaning silicon wafers, comprising the following steps:

[0078] 1) using the first anode ionizing solution to clean the silicon wafer at 10°C for 50s to obtain the first silicon wafer;

[0079] 2) cleaning the first silicon wafer at 50° C. for 50s with a cathodic ionizing liquid to obtain a second silicon wafer;

[0080] 3) using the second anode ionizing solution to clean the second silicon wafer at 60° C. for 50s to obtain a third silicon wafer;

[0081] 4) Use deionized water to clean the third silicon wafer for 500s;

[0082]The first anode ionizing solution includes ozone, hydroxyl radicals, and hydrogen peroxide, and the pH value is 7; the cathode ionizing solution includes NH 4 + , H 2 and OH - , the pH value is 8; the second anode ionizing solution includes ozone, hydroxyl radicals, hydrogen peroxide, H + , the pH value is 6; the power supply voltage of the electrolytic cell is 3V, and the current density is 50mA / cm 2 .

[0083] In Example...

Embodiment 3

[0085] A method for cleaning silicon wafers, comprising the following steps:

[0086] 1) using the first anode ionizing solution to clean the silicon wafer at 60°C for 15s to obtain the first silicon wafer;

[0087] 2) cleaning the first silicon wafer at 90° C. for 100s with a cathodic ionizing liquid to obtain a second silicon wafer;

[0088] 3) using the second anode ionizing solution to clean the second silicon wafer at 90° C. for 10s to obtain a third silicon wafer;

[0089] 4) Use deionized water to clean the third silicon wafer for 500s;

[0090] The first anode ionizing solution includes ozone, hydroxyl radicals, and hydrogen peroxide, and the pH range is 6; the cathode ionizing solution includes NH 4 + , H 2 and OH - , the pH value is 9; the second anode ionizing solution includes ozone, hydroxyl radicals, hydrogen peroxide, H + , the pH value is 3; the power supply voltage of the electrolytic cell is 5V, and the current density is 100mA / cm 2 .

[0091] In Exam...

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PUM

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Abstract

The invention discloses a silicon wafer cleaning method, comprising the following steps: 1) using a first anode ionizing solution to clean the silicon wafer to obtain a first silicon wafer; 2) using a cathode ionizing solution to clean the first silicon wafer to obtain a The second silicon wafer; 3) cleaning the second silicon wafer with the second anode ionizing solution to obtain the third silicon wafer; 4) cleaning the third silicon wafer with deionized water. In the silicon wafer cleaning method of the present invention, the organic pollutants on the surface of the silicon wafer can be directly oxidized into carbon dioxide and water by using the first anode ionizing liquid; The insoluble metal particles are coated with a negatively charged solution; the second silicon wafer is cleaned with the second anodic ionizing solution, which is acidic and has a positive charge. According to the principle of charge adsorption, the insoluble metal particles are rinsed and removed; the cleaning effect is good, and the impact on the environment is small.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a method for cleaning silicon wafers. Background technique [0002] Silicon is an important 21st century material. The semiconductor industry took off with the invention of the solid-state transistor in 1947, and since the introduction of integrated circuits and silicon, the development of chips has opened a new chapter. Integrated circuits combine several electronic components on a single chip, improving chip performance and reducing costs. With the introduction of silicon, the chip process has gradually evolved into a device that encapsulates large and complex circuit layers on the silicon wafer by coating and etching methods. Along with the large diameter of silicon wafers, the ultra-miniaturization and high integration of device structures, the requirements for the cleanliness and surface conditions of silicon wafers are getting higher and higher. Silicon wafer...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCH01L21/02052
Inventor 王偲偲
Owner 贵州晟达雅科技有限公司
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