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Graphene single crystal and growth method thereof

A growth method and graphene technology, applied in the field of materials, can solve the problems of uneven size of graphene domains, affecting the properties of graphene, etc., and achieve the effects of improving electrical conductivity and improving uniformity.

Inactive Publication Date: 2020-03-24
BEIJING GRAPHENE INST +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the commonly prepared CVD graphene is usually a polycrystalline sample, and the grain boundary defects between domains seriously affect the properties of graphene. Therefore, in recent years, researchers have developed a variety of nucleation density control methods to improve the domain area size and then reduce the grain boundary density, but the graphene domain size prepared by these methods is still very inhomogeneous

Method used

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  • Graphene single crystal and growth method thereof
  • Graphene single crystal and growth method thereof
  • Graphene single crystal and growth method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] 1) Cut ordinary industrial copper foil (purity 99.8%, thickness 50μm) into a rectangular foil with a length of 30cm and a width of 10cm, use a nitrogen gun to blow off the dust and particles that may exist on the surface of the copper foil, and place it horizontally on a flat graphite carrier superior.

[0033] 2) Put the above-mentioned graphite carrier into the central constant temperature zone of a 6-inch three-temperature zone tube furnace (produced by Tianjin Zhonghuan Company, the length of each temperature zone is 35cm). The temperature was raised to 1020° C. in an air atmosphere.

[0034] 3) After the temperature rises to 1020°C, change the gas to 500 sccm argon-oxygen mixed gas (oxygen ratio is 0.04%), anneal the copper foil in this atmosphere for 30 minutes, and fully remove the organic pollution such as oil stains that may exist on the surface of the industrial copper foil , thereby reducing the nucleation density of subsequent graphene.

[0035] 4) Keeping...

Embodiment 2

[0043] 1) Cut ordinary industrial copper foil (purity 99.8%, thickness 50μm) into a rectangular foil with a length of 30cm and a width of 10cm, use a nitrogen gun to blow off the dust and particles that may exist on the surface of the copper foil, and place it horizontally on a flat graphite carrier superior.

[0044] 2) Put the above-mentioned graphite carrier into the central constant temperature zone of a 6-inch three-temperature zone tube furnace (produced by Tianjin Zhonghuan Company, the length of each temperature zone is 35cm). The temperature was raised to 1020° C. in an air atmosphere.

[0045] 3) After the temperature rises to 1020°C, change the gas to 500 sccm argon-oxygen mixed gas (oxygen ratio is 0.04%), anneal the copper foil in this atmosphere for 30 minutes, and fully remove the organic pollution such as oil stains that may exist on the surface of the industrial copper foil , thereby reducing the nucleation density of subsequent graphene.

[0046]4) Keeping ...

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Abstract

The invention provides a growth method of a graphene single crystal, and the method comprises the following steps: growing graphene on a substrate through chemical vapor deposition, and introducing anoxidizing gas in the growth process. The invention also provides the graphene single crystal formed by the method. According to the growth method, continuous spontaneous nucleation in the graphene growth process is inhibited as an entry point, and the formation of metastable nuclei in the graphene growth process is destroyed by continuously introducing a trace amount of the oxidizing gas for continuous passivation. According to the method, on the basis that the quality of the graphene is not influenced, the uniformity of the size of the domain region of the graphene is remarkably improved, and then the performance of the graphene in the aspects of electric conduction, heat conduction, mechanical strength and the like can be effectively improved.

Description

technical field [0001] The invention belongs to the field of materials and relates to a method for growing a graphene single crystal with high uniformity. Background technique [0002] Graphene is a sp 2 A two-dimensional monoatomic layer crystal in which hybridized carbon atoms are arranged in a honeycomb structure. The unique crystal structure and energy band structure endow graphene with many excellent properties, such as: extremely high carrier mobility, high mechanical strength, high thermal conductivity, high light transmittance, good chemical stability, etc. . These excellent properties make graphene have very broad application prospects in many fields. [0003] Chemical vapor deposition (CVD) is considered to be the most industrialized graphene preparation method. However, the commonly prepared CVD graphene is usually a polycrystalline sample, and the grain boundary defects between domains seriously affect the properties of graphene. Therefore, in recent years, r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/02C30B25/14
CPCC30B25/14C30B29/02
Inventor 刘忠范彭海琳陈步航孙禄钊李杨立志刘海洋王悦晨蔡阿利丁庆杰赵振勇
Owner BEIJING GRAPHENE INST
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