Silicon through hole structure, forming method thereof and semiconductor device

Abstract

The invention provides a silicon through hole structure, a forming method thereof and a semiconductor device. The forming method of the silicon through hole structure includes a first via is formed, afirst isolation layer is sequentially formed on the side wall and the bottom wall of the first through hole; the sacrificial layer and the second isolation layer define a second through hole, a plugis formed in the second through hole, then the sacrificial layer is removed, an axial gap is formed between the first isolation layer and the second isolation layer, then a third isolation layer is formed to be in lap joint with the top of the first isolation layer and the top of the second isolation layer to form a coaxial air cavity sleeve, and the coaxial air cavity sleeve surrounds the plug. Therefore, the preparation process is simple, and the axial gap in the formed coaxial air cavity sleeve is uniform, so that the parasitic capacitance is effectively controlled, and the performance of the obtained device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuits, in particular to a through-silicon via structure, a forming method thereof, and a semiconductor device. Background technique [0002] Through holes, such as Through-Silicon-Via (TSV), are an electrical connection through a chip in an integrated circuit, which can conduct signals from one side of the chip to the other side of the chip, and by combining chip stacking technology, Realize three-dimensional integration of multi-layer chips. [0003] Compared with the traditional wire bonding technology, the use of through-holes can effectively shorten the length of the interconnection lines between chips, thereby improving the signal transmission performance and operating frequency of the electronic system, which is an important direction for the development of semiconductor technology in the future. How to form Penetrating through holes is the core to realize the three-dime...

AI Technical Summary

Problems solved by technology

[0004] However, the TSV structure will generate parasitic capacitance

For example, the patent document EP2408006A3 tries to improve this defect, but the preparation is complicated, the feasibility is not high, and the axial gap formed is not uniform, so the improvement of parasitic capacitance is limited

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